MX25L1635D
Abstract: MX25L163 mx25l1635 MX25L1635DM MX25L1635DM2I-12G mx25l1 MX25L1635DM2I IN3064 MX25L1605D mx25
Text: MX25L1635D MX25L1635D DATASHEET P/N: PM1374 1 REV. 1.5, OCT. 01, 2008 MX25L1635D Contents FEATURES . 5
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MX25L1635D
PM1374
MX25L1635D
MX25L163
mx25l1635
MX25L1635DM
MX25L1635DM2I-12G
mx25l1
MX25L1635DM2I
IN3064
MX25L1605D
mx25
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Untitled
Abstract: No abstract text available
Text: MX25L1673E MX25L1673E HIGH PERFORMANCE SERIAL FLASH SPECIFICATION P/N: PM1912 1 REV. 1.2, JAN. 14, 2014 MX25L1673E Contents 1. FEATURES. 4
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MX25L1673E
PM1912
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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GL032A
Abstract: S71GL032A S71GL032
Text: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this
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S71GL032A
16-bit)
1M/512K/256K
GL032A
S71GL032
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M15451E
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD29F064115-X 64M-BIT CMOS LOW-VOLTAGE DUAL OPERATION FLASH MEMORY 4M-WORD BY 16-BIT WORD MODE PAGE MODE Description The µPD29F064115-X is a flash memory organized of 67,108,864 bits and 142 sectors. Sectors of this memory can
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PD29F064115-X
64M-BIT
16-BIT
PD29F064115-X
M15451E
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Untitled
Abstract: No abstract text available
Text: Preliminary W28F321BT/TT 32MBIT 2MBIT x 16 PAGE MODE DUAL WORK FLASH MEMORY 1. GENERAL DESCRIPTION The W28F321, a 4-Plane Page Mode Dual Work (Simultaneous Read while Erase/Program) Flash memory, is a low power, high density, cost efficiency, nonvolatile read/write storage solution for a wide
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W28F321BT/TT
32MBIT
W28F321,
W28F321
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IN3064
Abstract: MX25L3225D
Text: MX25L3225D MX25L3225D DATASHEET P/N: PM1432 1 REV. 0.00, SEP. 19, 2008 MX25L3225D Contents FEATURES . 5
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MX25L3225D
PM1432
IN3064
MX25L3225D
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740-0007
Abstract: EN29GL064 6A000
Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and
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EN29GL064
8192K
4096K
16-bit)
740-0007
EN29GL064
6A000
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LH28F320BFHE-PBTL80
Abstract: AP-007-SW-E
Text: Date 32M x16 Flash Memory LH28F320BFHE-PBTL80 Aug. 28. 2001 LHF32F12 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission of the company.
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LH28F320BFHE-PBTL80
LHF32F12
AP-001-SD-E
AP-006-PT-E
AP-007-SW-E
LH28F320BFHE-PBTL80
AP-007-SW-E
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SA-275
Abstract: 2aa 555 SA1127 SA1-108 SA1115 SA298 SA283 SA1117 PDL128G S29PL129J
Text: Am29PDL129H Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29PL129J supersedes Am29PDL129H and is the factory-recommended migration path. Please refer to the S29PL129J datasheet for specifications and ordering information. Availability of this document
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Am29PDL129H
S29PL129J
Am29PDL129J
SA-275
2aa 555
SA1127
SA1-108
SA1115
SA298
SA283
SA1117
PDL128G
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4kw marking
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50308-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x16) FLASH MEMORY & 8M (×16) STATIC RAM MB84VD22280FA-70/MB84VD22290FA-70 MB84VD22280FE-70/MB84VD22290FE-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V
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DS05-50308-2E
MB84VD22280FA-70/MB84VD22290FA-70
MB84VD22280FE-70/MB84VD22290FE-70
59-ball
MB84VD22280FA/80FE/90FA/90FE
F0311
4kw marking
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M25P16 VDFPN8
Abstract: M25P16 A21 SO8 MARKING CODE A21 SO8 Numonyx AN1995
Text: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features n 16 Mbit of Flash memory n Page Program up to 256 bytes in 0.64 ms (typical) n Sector Erase (512 Kbit) in 0.6 s (typical) n Bulk Erase (16 Mbit) in 13 s (typical) n 2.7 V to 3.6 V single supply voltage
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M25P16
2015h)
M25P16 VDFPN8
M25P16
A21 SO8
MARKING CODE A21 SO8
Numonyx AN1995
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LH28F640BFHG-PBTL70A
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F640BFHG-PBTL70A Flash Memory 64Mbit 4Mbitx16 (Model Number: LHF64FH9) Spec. Issue Date: September 27, 2004 Spec No: FM045022A LHF64FH9 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F640BFHG-PBTL70A
64Mbit
4Mbitx16)
LHF64FH9)
FM045022A
LHF64FH9
LH28F640BFHG-PBTL70A
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LH28F320BFHE-PBTLF1
Abstract: Flash Memory 32Mbit DQ15DQ0
Text: PRELIMINARY PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLF1 Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FF1 Lead-free (Pb-free) Spec. Issue Date: October 15, 2004 Spec No: EL16X114 LHF32FF1 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,
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LH28F320BFHE-PBTLF1
32Mbit
2Mbitx16)
LHF32FF1
EL16X114
LH28F320BFHE-PBTLF1
Flash Memory 32Mbit
DQ15DQ0
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SA70
Abstract: 2SA31
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50212-3E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 32M (x16) FLASH MEMORY & 16M (×16) SRAM Interface FCRAM MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90 MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90 • FEATURES
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DS05-50212-3E
MB84VD22386EJ/VD22387EJ/VD22388EJ-85/90
MB84VD22396EJ/VD22397EJ/VD22398EJ-85/90
71-ball
F0111
SA70
2SA31
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LRS1830
Abstract: No abstract text available
Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1830 Stacked Chip 256M x16 Boot Block Flash and 32M (x16) SCRAM (Model No.: LRS1830) Spec No.: EL14Z046 Issue Date: January 14, 2003 sharp L R S1 8 3 0 x Handle this document carefully for it contains material protected by international copyright law.
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LRS1830
LRS1830)
EL14Z046
LRS1830
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M29DW323D
Abstract: TSOP48 outline M29DW323DB M29DW323DT M29DW324D M29DW324DB M29DW324DT
Text: M29DW324DT M29DW324DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns
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M29DW324DT
M29DW324DB
TSOP48
M29DW323D
TSOP48 outline
M29DW323DB
M29DW323DT
M29DW324D
M29DW324DB
M29DW324DT
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M29W640DB
Abstract: M29W640D M29W640DT A0-A21 6A000
Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns
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M29W640DT
M29W640DB
TSOP48
TFBGA63
M29W640DB
M29W640D
M29W640DT
A0-A21
6A000
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M420000000
Abstract: FSB073 3FE00
Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector
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Am42DL640AG
16-Bit)
73-Ball
5M-1994.
M420000000
FSB073
3FE00
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71WS256NC0BAIAU
Abstract: cosmoram synchronous S71WS256NC0 S71WS256ND0 S71WS512ND0 TSD084 S71WS512NC0BFIAZ SA002
Text: S71WS512Nx0/S71WS256Nx0 Based MCPs Stacked Multi-chip Product MCP 256/512 Megabit (32M/16M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory with 128/64Megabit (8M/4M x 16-Bit) CosmoRAM ADVANCE INFORMATION Distinctive Characteristics
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S71WS512Nx0/S71WS256Nx0
32M/16M
128/64Megabit
16-Bit)
54MHz
S71WS
S71WS512/256Nx0
S71WS512Nx0/S71WS256Nx0
71WS256NC0BAIAU
cosmoram synchronous
S71WS256NC0
S71WS256ND0
S71WS512ND0
TSD084
S71WS512NC0BFIAZ
SA002
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BGA-56P-M01
Abstract: DS05-50216-1E
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50216-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2108XEA-70/85/MB84VD2109XEA-70/85 • FEATURES • Power Supply Voltage of 2.7 to 3.3 V
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DS05-50216-1E
MB84VD2108XEA-70/85/MB84VD2109XEA-70/85
56-ball
56-pin
BGA-56P-M01
DS05-50216-1E
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SA70
Abstract: 18FFFFH
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50204-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 4M (× 8/×16) STATIC RAM MB84VD2218XEC-90/MB84VD2219XEC-90 MB84VD2218XEE-90/MB84VD2219XEE-90 • FEATURES • Power supply voltage of 2.7 to 3.3 V
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DS05-50204-2E
MB84VD2218XEC-90/MB84VD2219XEC-90
MB84VD2218XEE-90/MB84VD2219XEE-90
73-ball
MB84VD2218XEC/EE-90/MB84VD2219XEC/EE-90
SA70
18FFFFH
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th50vsf1400
Abstract: BA30
Text: TOSHIBA TH 50VSF1400/1401ACXB TENTATIVE TOSHIBA MULTI CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM A N D FLASH M E M O R Y M IX E D M U LTI-C H IP PACKAGE DESCRIPTION The TH50VSF1400/1401ACXB is a mixed containing a package 2,097,152-bit SRAM and a 16,777,216-bit flash memory. The SRAM is organized as 262,144 words by 8 bits and the flash memory
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50VSF1400/1401ACXB
TH50VSF1400/1401ACXB
152-bit
216-bit
48-pin
50VSF1400/1401
th50vsf1400
BA30
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a19t
Abstract: ba1s 000IH
Text: TOSHIBA TENTATIVE TC58FYT160/B160FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT 2M X 8 BITS / 1M X 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FYT160/B160 is a 16,777,216 - bit, 3.0-V read-only electrically erasable and programmable
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TC58FYT160/B
160FT-12
16-MBIT
TC58FYT160/B160
48-pin
a19t
ba1s
000IH
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