transistor 2202
Abstract: transistor SMD FLO 14 gilbert cell differential pair DCS-1800 GPS05866 gilbert mixer qpsk modulator 4 to 6 GHz T2201-XV10-S1-7600 transistor bx smd
Text: ICs for Communications Mixer DC - 2.5 GHz and Vector Modulator 1.4 - 2.5 GHz PMB 2202 Version 1.0 Preliminary Specification 08.95 T2201-XV10-S1-7600 PMB 2202 Revision History: Current Version: 08.95 Previous Version: none Page Page in previous (in new Version
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T2201-XV10-S1-7600
GPS05866
P-TSSOP-24
transistor 2202
transistor SMD FLO 14
gilbert cell differential pair
DCS-1800
GPS05866
gilbert mixer
qpsk modulator 4 to 6 GHz
T2201-XV10-S1-7600
transistor bx smd
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9829 A
Abstract: TARF2202 .7E8
Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,
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TARF2202
50-ohm
TAHB09)
30GHz
TARF2202
1900MHz
100MHz
9829 A
.7E8
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siemens rs 1007
Abstract: 2202 DCS-1800 PMB2201 PMB2202 nf schaltungen gilbert cell differential pair
Text: ICs for Communications Mixer DC - 2.5GHz and Vector Modulator 1.4 - 2.5GHz PMB 2202 Version 1.2 Preliminary Data Sheet 08.97 Edition 08.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, Balanstraße 73, 81541 München Siemens AG 1995.
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P-TSSOP-24
siemens rs 1007
2202
DCS-1800
PMB2201
PMB2202
nf schaltungen
gilbert cell differential pair
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Untitled
Abstract: No abstract text available
Text: A580-2202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)220ö V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)175 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)165m° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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A580-2202
Freq250k
time10u
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Untitled
Abstract: No abstract text available
Text: 1814-2202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)225ö V(BR)CBO (V)250 I(C) Max. (A)10 Absolute Max. Power Diss. (W)44 Maximum Operating Temp (øC)140õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq30M
time400n
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STK4152
Abstract: STK4152II transistor 38W en220 STK4152 II 30Wmin
Text: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.
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EN2202B
STK4152II
STK4102II
STK4152II)
STK4101V
STK4101II
STK4152II]
STK4152
STK4152II
transistor 38W
en220
STK4152 II
30Wmin
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STK4152II
Abstract: en220 STK4152 STK4152 II transistor 38W 4040 pin-compatible 50Hz sine wave filter circuit SAMPLE TRANSISTOR stk4152-ii AN 22022
Text: Ordering number: EN2202B Thick Film Hybrid IC STK4152II AF Power Amplifier Split Power Supply (30W + 30W min, THD = 0.4%) Features Package Dimensions • The STK4102II series (STK4152II) and STK4101V series (high-grade type) are pin-compatible in the output range of 6W to 50W and enable easy design.
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EN2202B
STK4152II
STK4102II
STK4152II)
STK4101V
STK4101II
STK4152II]
STK4152II
en220
STK4152
STK4152 II
transistor 38W
4040 pin-compatible
50Hz sine wave filter circuit
SAMPLE TRANSISTOR
stk4152-ii
AN 22022
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transistor 2202
Abstract: 3001 transistor 2202 TRANSISTOR SRA2202M
Text: SRA2202M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2202M
O-92M
KSR-I012-000
-10mA
-10mA,
transistor 2202
3001 transistor
2202 TRANSISTOR
SRA2202M
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SRA2202M
Abstract: No abstract text available
Text: SRA2202M PNP Silicon Transistor PIN Connection Descriptions • Switching application 2. OUT • Interface circuit and driver circuit application Features 3. IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and
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SRA2202M
O-92M
KSD-R0B013-000
SRA2202M
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Untitled
Abstract: No abstract text available
Text: SRA2202M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2202M
O-92M
KSR-I012-001
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Untitled
Abstract: No abstract text available
Text: SRA2202M Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process
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SRA2202M
SRA2202M
O-92M
KSR-I012-002
KSR-I012-002
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SRA2202M
Abstract: No abstract text available
Text: SRA2202M PNP Silicon Transistor PIN Connection Descriptions • Sw it ching applicat ion 2. OUT • I nt erface circuit and driver circuit applicat ion Features 3. IN • Wit h built- in bias resist ors • Sim plify circuit design • Reduce a quant it y of part s and
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SRA2202M
KSD-R0B013-000
SRA2202M
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PRE-AMPLIFIER
Abstract: LM1202
Text: A pril 1999 LM2202 230 MHz Video Amplifier System General Description The LM 2202 is a very high frequency video a m plifier system intended for use in high resolution m onochrom e o r RGB color m onitor applications. In addition to the w ideband video a m plifier the LM 2202 contains a gated differential input black
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LM2202
LM2202M
LM2202N
PRE-AMPLIFIER
LM1202
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XR-2203
Abstract: XR-2203CP XR-2204 XR2203CP XR2204CP 2203CP XR-2202 2204cp XR2203 XR2204
Text: Z * EXAR XR-220172/3/4 High-Voltage, High-Current Darlington Transistor Arrays GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM The XR-2201, XR-2202, XR-2203, and XR-2204 Darlington transistor arrays are comprised of seven sil icon NPN Darlington pairs on a single monolithic sub
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XR-220172/3/4
XR-2201,
XR-2202,
XR-2203,
XR-2204
500mA
XR-1568M
XR-1568/XR-1468C
XR-1468/1568
XR-2203
XR-2203CP
XR2203CP
XR2204CP
2203CP
XR-2202
2204cp
XR2203
XR2204
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LM2402T
Abstract: lm2402 U12402 023p 2n5770 equivalent LM2202 P6201 CRT MONITOR SCHEMATIC DIAGRAM signal path designer
Text: Semiconductor LM2402 Monolithic Triple 3 ns CRT Driver • Well m atched w ith LM 2202 video pream ps General Description The LM 2402 is an integrated high voltage C R T driver circuit designed for use in high resolution co lo r m onitor applica tions. The IC contains three high input im pedance, w ide
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LM2402
LM2402
T0-220
LM2402T
U12402
023p
2n5770 equivalent
LM2202
P6201
CRT MONITOR SCHEMATIC DIAGRAM
signal path designer
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2402 transistor
Abstract: "101016" ers 2202 1 Tektronix 2402 CS 2402
Text: Semiconductor LM2402 Monolithic Triple 3 ns CRT Driver • Well m atched with LM 2202 video pream ps General Description The LM 2402 is an integrated high voltage C R T driver circuit designed fo r use in high resolution color m onitor a pplica tions. The 1C contains three high input im pedance, w ide
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LM2402
2402 transistor
"101016"
ers 2202 1
Tektronix 2402
CS 2402
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LM 072
Abstract: LM2402
Text: Semiconductor LM2402 Monolithic Triple 3 ns CRT Driver • Well m atched with LM 2202 video pream ps General Description The LM 2402 is an integrated high voltage C R T driver circuit designed fo r use in high resolution color m onitor a pplica tions. The 1C contains three high input im pedance, w ide
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LM2402
wi0-272-9959
LM 072
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS 3ME M447 5ÛH D □ G Q 7 b M ci b M H P A MINIATURE FIBER OPTIC LOGIC LINK HEW LETT PACKARD HFBR-1202 HFBR-2202 HFBR-4202 Features • DC TO 5 M BAU D DATA RATE • M A X IM U M L IN K L E N G T H 625 Metres Guaranteed 1600 Metres (Typical)
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HFBR-1202
HFBR-2202
HFBR-4202
FBR-1202
FBR-2202
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HP3312A
Abstract: nf schaltungen DCS-1800
Text: S IE M E N S if'o I V v fn r 'o m m i in ir o t in n c IU l V / U M M M U I M V / U I I V / I I O Mixer DC - 2.5 GHz and Vector Modulator 1.4 - 2.5 GHz PMB 2202 Version 1.0 Preliminary Specification / • 08.95 T2201-XV10-S1 -7600 Edition 08.95 Ausgabe 08.95
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T2201-XV10-S1
X10pf
its07006
HP3312A
nf schaltungen
DCS-1800
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HFET-2202
Abstract: NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE HPAC-100A S2112
Text: - C OM PON EN TS HFET-2202 GaAs FETs LOW NOISE MICROWAVE GaAS FET H E W L E T T P A C KA R D • Features LOW NOISE FIGURE 1.1 dB Typical NF at 4 GHz, 1.4 dB Maximum 1.9 dB Typical NF at 8 GHz a HIGH ASSOCIATED GAIN 13.6 dB Typical Ga at 4 GHz, 12.0 dB Minimum
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HFET-2202
HFET-2202
NOISE MICROWAVE GaAS HFET-2202 NOISE FIGURE
HPAC-100A
S2112
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HFBR-1201
Abstract: hfbr-2201 SIECOR Fiber Optic cable HFBR-1202 HFBR-2202 transistor b 1202 RS-458 HP 2202 screw cores UNS thread HFBR2202
Text: HEWLETT-PACKARD/ CMPNTS 3ME M447 5ÛH D □ G Q 7 b M ci b M H P A MINIATURE FIBER OPTIC LOGIC LINK HEW LETT PACKARD HFBR-1202 HFBR-2202 HFBR-4202 Features • DC TO 5 M BAU D DATA RATE • M A X IM U M L IN K L E N G T H 625 Metres Guaranteed 1600 Metres (Typical)
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M4475Ã
HFBR-1202
HFBR-2202
HFBR-4202
HFBR-1202
HFBR-2202
HFBR-1201
hfbr-2201
SIECOR Fiber Optic cable
transistor b 1202
RS-458
HP 2202
screw cores UNS thread
HFBR2202
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Texas Instruments GPS
Abstract: TPS2202 TPS2202IDF TPS2202IDFLE
Text: TPS2202IDF DUAL-SLOT PC CARD POWER-INTERFACE SWITCH FOR SERIAL PCMCIA CONTROLLER SLVS103 - DECEMBER 1994 DF PACKAGE TOP VIEW Fully Integrated Vqc and Vpp Switching for Dual-Slot PC Card Interface Saves PCMCIA Controller I/O Leads by Utilizing 3>Lead Serial Interface
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TPS2202IDF
SLVS103
30-Pin
160-mÂ
MII-STD-883C,
Texas Instruments GPS
TPS2202
TPS2202IDF
TPS2202IDFLE
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bu 515
Abstract: BU208A Q68000-A494 Q68000-A5163 T-25 PICTURE TUBE BU 110 BU208
Text: . 2SC D • Ö235b05 QQQMÖ4Q ! ■ ISIEG BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIENGESELLSCHAF V84Ö v ~ r - 3 3 - < n BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high
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0235bQS
Q68000-A494
Q68000-A5163
bu 515
BU208A
Q68000-A494
Q68000-A5163
T-25
PICTURE TUBE
BU 110
BU208
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bu 2225
Abstract: BU208A BU 102
Text: 25C D • 023SbQS QQGMÔ4Q I M S I E G , BU 208 BU 208 A NPN Silicon Power Transistors SIEMENS AKTIEN6ESELLSCHAF V84Ô 0 -7 ^ 3 3 -0 7 BU 208 and BU 208 A are triple diffused silicon NPN power switching transistors in TO 3 case 3 B 2 DIN 41872 . They are outstanding for short switching times and high
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023SbQS
8000-A
fl23Sb05
bu 2225
BU208A
BU 102
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