02APR
Abstract: No abstract text available
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-lead
02APR
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M48T35AY
Abstract: M4T32-BR12SH1 M4T32-BR12SH6 M48T35AV M4T28-BR12SH1 SOH28 M4T28-BR12SH1 equivalent 6845
Text: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T35AV
M48T35AY:
M48T35AV:
PCDIP28
M48T35AY
M4T32-BR12SH1
M4T32-BR12SH6
M48T35AV
M4T28-BR12SH1
SOH28
M4T28-BR12SH1 equivalent
6845
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Untitled
Abstract: No abstract text available
Text: M27W801 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V 32 32 – 100ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C801 ■ LOW POWER CONSUMPTION: 1
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M27W801
100ns
M27C801
FDIP32W
PDIP32
200mA
PLCC32
TSOP32
M27W801
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EIGHT MOSFET ARRAY
Abstract: 1N5817 M48T212V M4TXX-BR12SH MTD20P06HDL SOH44
Text: M48T212V 3.3V TIMEKEEPER supervisor Features • Integrated real-time clock, power-fail control circuit, battery and crystal ■ Converts low power SRAM into NVRAMs ■ Year 2000 compliant 4-digit year ■ Battery low flag ■ Microprocessor power-on reset
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M48T212V
M48T212V:
44-lead
EIGHT MOSFET ARRAY
1N5817
M48T212V
M4TXX-BR12SH
MTD20P06HDL
SOH44
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M48Z35
Abstract: M48Z35Y SOH28 PCDIP28
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:
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Original
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PDF
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
28-lead
M48Z35
M48Z35Y
SOH28
PCDIP28
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M48T35AY
Abstract: STMicroelectronics M4T32-BR12SH6
Text: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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PDF
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M48T35AV
M48T35AV:
M48T35AY
STMicroelectronics
M4T32-BR12SH6
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TSOP32 Package
Abstract: FDIP32WC JESD97 M27C801 M27W801 PDIP32 PLCC32 TSOP32
Text: M27W801 8 Mbit 1Mb x8 low voltage UV EPROM and OTP EPROM Feature summary • 2.7V to 3.6V supply voltage in READ operation ■ Access time: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V ■ Pin compatible with M27C801 ■ Low power consumption:
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M27W801
100ns
M27C801
200mA
FDIP32W
PDIP32
PLCC32
TSOP32
TSOP32 Package
FDIP32WC
JESD97
M27C801
M27W801
PDIP32
PLCC32
TSOP32
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FDIP32WC
Abstract: JESD97 M27C801 M27W801 PDIP32 PLCC32 TSOP32
Text: M27W801 8 Mbit 1Mb x8 low voltage UV EPROM and OTP EPROM Feature summary • 2.7V to 3.6V supply voltage in READ operation ■ Access time: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 32 ■ Pin compatible with M27C801 ■ Low power consumption:
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Original
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PDF
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M27W801
100ns
M27C801
200mA
FDIP32W
PDIP32
PLCC32
TSOP32
FDIP32WC
JESD97
M27C801
M27W801
PDIP32
PLCC32
TSOP32
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M27C801
Abstract: M27W801 PDIP32 PLCC32 TSOP32
Text: M27W801 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V 32 32 – 100ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C801 ■ LOW POWER CONSUMPTION: 1
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Original
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PDF
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M27W801
100ns
M27C801
FDIP32W
PDIP32
TSOP32
PLCC32
200mA
M27W801
M27C801
PDIP32
PLCC32
TSOP32
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k 2608
Abstract: M48Z35 M48Z35Y SOH28
Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:
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Original
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PDF
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M48Z35
M48Z35Y
M48Z35:
M48Z35Y:
PCDIP28
28-lead
k 2608
M48Z35
M48Z35Y
SOH28
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M48T35AV
Abstract: M48T35AY SOH28
Text: M48T35AV 3.3V, 256Kbit 32Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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PDF
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M48T35AV
256Kbit
32Kbit
M48T35AY:
M48T35AV:
PCDIP28
M48T35AV
M48T35AY
SOH28
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M27C8
Abstract: M27C80
Text: M27W801 8 Mbit 1Mb x8 low voltage UV EPROM and OTP EPROM Feature summary • 2.7V to 3.6V supply voltage in READ operation ■ Access time: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P
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M27W801
100ns
M27C801
FDIP32W
200mA
PDIP32
M27C8
M27C80
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DB3 C640
Abstract: ST7920a WDG1603P A940 A970 S149 AAB0 DB3 C540 a950 AB70
Text: ST Sitronix ST7920A ㆗文字型點矩陣 LCD 控制/驅動器 PRELIMINARY 主要特色 z 配合外部 Segment 驅動器可以擴充顯示區 域到達15x2個㆗文字 z 內建振盪器由外部電阻調整 z 低功率省電設計 z VLCD V0~ Vss : 最大 7V
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ST7920A
16x16
33-common
64-segment
ST7920A
819216X1612816X8
64x256GDRAM256ICON
ST7920ACGRAM416X16
DB3 C640
WDG1603P
A940
A970
S149
AAB0
DB3 C540
a950
AB70
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M48T35AV
Abstract: M48T35AY SOH28
Text: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultralow power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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Original
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PDF
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M48T35AV
M48T35AY:
M48T35AV:
PCDIP28
M48T35AV
M48T35AY
SOH28
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Untitled
Abstract: No abstract text available
Text: 4 TH 1S DRAWING IS UNPUBLI S HED. RELEASED FOR PUBLI CATI ON BY TYCO ELECTRONI CS COR POR AT I ON©11- RI GHT S COPYRIGHT - 3 0 , 5 _ q 20 LOC R E V 1S 1ONS DI S T RESERVED. p LTR DESCR1PTI ON B C D E ED 6 X 2 , 5 4 = 1 5 , 2 4 MI 2,54 I First DATE
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OCR Scan
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22APR2008
21APR2000
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