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    02APR

    Abstract: No abstract text available
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: 28-lead 02APR

    M48T35AY

    Abstract: M4T32-BR12SH1 M4T32-BR12SH6 M48T35AV M4T28-BR12SH1 SOH28 M4T28-BR12SH1 equivalent 6845
    Text: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T35AV M48T35AY: M48T35AV: PCDIP28 M48T35AY M4T32-BR12SH1 M4T32-BR12SH6 M48T35AV M4T28-BR12SH1 SOH28 M4T28-BR12SH1 equivalent 6845

    Untitled

    Abstract: No abstract text available
    Text: M27W801 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V 32 32 – 100ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C801 ■ LOW POWER CONSUMPTION: 1


    Original     		PDF M27W801 100ns M27C801 FDIP32W PDIP32 200mA PLCC32 TSOP32 M27W801

    EIGHT MOSFET ARRAY

    Abstract: 1N5817 M48T212V M4TXX-BR12SH MTD20P06HDL SOH44
    Text: M48T212V 3.3V TIMEKEEPER supervisor Features • Integrated real-time clock, power-fail control circuit, battery and crystal ■ Converts low power SRAM into NVRAMs ■ Year 2000 compliant 4-digit year ■ Battery low flag ■ Microprocessor power-on reset


    Original     		PDF M48T212V M48T212V: 44-lead EIGHT MOSFET ARRAY 1N5817 M48T212V M4TXX-BR12SH MTD20P06HDL SOH44

    M48Z35

    Abstract: M48Z35Y SOH28 PCDIP28
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ 28 1 WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: 28-lead M48Z35 M48Z35Y SOH28 PCDIP28

    M48T35AY

    Abstract: STMicroelectronics M4T32-BR12SH6
    Text: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T35AV M48T35AV: M48T35AY STMicroelectronics M4T32-BR12SH6

    TSOP32 Package

    Abstract: FDIP32WC JESD97 M27C801 M27W801 PDIP32 PLCC32 TSOP32
    Text: M27W801 8 Mbit 1Mb x8 low voltage UV EPROM and OTP EPROM Feature summary • 2.7V to 3.6V supply voltage in READ operation ■ Access time: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V ■ Pin compatible with M27C801 ■ Low power consumption:


    Original     		PDF M27W801 100ns M27C801 200mA FDIP32W PDIP32 PLCC32 TSOP32 TSOP32 Package FDIP32WC JESD97 M27C801 M27W801 PDIP32 PLCC32 TSOP32

    FDIP32WC

    Abstract: JESD97 M27C801 M27W801 PDIP32 PLCC32 TSOP32
    Text: M27W801 8 Mbit 1Mb x8 low voltage UV EPROM and OTP EPROM Feature summary • 2.7V to 3.6V supply voltage in READ operation ■ Access time: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V 32 ■ Pin compatible with M27C801 ■ Low power consumption:


    Original     		PDF M27W801 100ns M27C801 200mA FDIP32W PDIP32 PLCC32 TSOP32 FDIP32WC JESD97 M27C801 M27W801 PDIP32 PLCC32 TSOP32

    M27C801

    Abstract: M27W801 PDIP32 PLCC32 TSOP32
    Text: M27W801 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V 32 32 – 100ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C801 ■ LOW POWER CONSUMPTION: 1


    Original     		PDF M27W801 100ns M27C801 FDIP32W PDIP32 TSOP32 PLCC32 200mA M27W801 M27C801 PDIP32 PLCC32 TSOP32

    k 2608

    Abstract: M48Z35 M48Z35Y SOH28
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: PCDIP28 28-lead k 2608 M48Z35 M48Z35Y SOH28

    M48T35AV

    Abstract: M48T35AY SOH28
    Text: M48T35AV 3.3V, 256Kbit 32Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T35AV 256Kbit 32Kbit M48T35AY: M48T35AV: PCDIP28 M48T35AV M48T35AY SOH28

    1N5817

    Abstract: M48T212V M4TXX-BR12SH MTD20P06HDL SOH44 diode EB 24
    Text: M48T212V 3.3V TIMEKEEPER supervisor Features • Integrated real-time clock, power-fail control circuit, battery and crystal ■ Converts low power SRAM into NVRAMs ■ Year 2000 compliant 4-digit year ■ Battery low flag ■ Microprocessor power-on reset


    Original     		PDF M48T212V M48T212V: 44-lead SOH44 1N5817 M48T212V M4TXX-BR12SH MTD20P06HDL SOH44 diode EB 24

    Untitled

    Abstract: No abstract text available
    Text: M48Z35 M48Z35Y 256 Kbit 32 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection ■ ■ WRITE protect voltages:


    Original     		PDF M48Z35 M48Z35Y M48Z35: M48Z35Y: PCDIP28 28-lead

    M27C801

    Abstract: M27W801 PDIP32 PLCC32 TSOP32
    Text: M27W801 8 Mbit 1Mb x8 Low Voltage UV EPROM and OTP EPROM • 2.7V to 3.6V SUPPLY VOLTAGE in READ OPERATION ■ ACCESS TIME: – 80ns at VCC = 3.0V to 3.6V 32 32 – 100ns at VCC = 2.7V to 3.6V ■ PIN COMPATIBLE with M27C801 ■ LOW POWER CONSUMPTION: 1


    Original     		PDF M27W801 100ns M27C801 FDIP32W PDIP32 TSOP32 PLCC32 200mA M27W801 M27C801 PDIP32 PLCC32 TSOP32

    M48T35AY

    Abstract: M48T35AV SOH28
    Text: M48T35AV 3.3V, 256Kbit 32Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T35AV 256Kbit 32Kbit M48T35AY: M48T35AV: PCDIP28 M48T35AY M48T35AV SOH28

    Untitled

    Abstract: No abstract text available
    Text: M48T212V 3.3V TIMEKEEPER supervisor Features • Integrated real-time clock, power-fail control circuit, battery and crystal ■ Converts low power SRAM into NVRAMs ■ Year 2000 compliant 4-digit year ■ Battery low flag ■ Microprocessor power-on reset


    Original     		PDF M48T212V M48T212V: 44-lead

    M27C8

    Abstract: M27C80
    Text: M27W801 8 Mbit 1Mb x8 low voltage UV EPROM and OTP EPROM Feature summary • 2.7V to 3.6V supply voltage in READ operation ■ Access time: – 80ns at VCC = 3.0V to 3.6V – 100ns at VCC = 2.7V to 3.6V ) s ( t c u d o ) r s ( P t c e t u e d l o o r s P


    Original     		PDF M27W801 100ns M27C801 FDIP32W 200mA PDIP32 M27C8 M27C80

    DB3 C640

    Abstract: ST7920a WDG1603P A940 A970 S149 AAB0 DB3 C540 a950 AB70
    Text: ST Sitronix ST7920A ㆗文字型點矩陣 LCD 控制/驅動器 PRELIMINARY 主要特色 z 配合外部 Segment 驅動器可以擴充顯示區 域到達15x2個㆗文字 z 內建振盪器由外部電阻調整 z 低功率省電設計 z VLCD V0~ Vss : 最大 7V


    Original     		PDF ST7920A 16x16 33-common 64-segment ST7920A 819216X1612816X8 64x256GDRAM256ICON ST7920ACGRAM416X16 DB3 C640 WDG1603P A940 A970 S149 AAB0 DB3 C540 a950 AB70

    M48T35AV

    Abstract: M48T35AY SOH28
    Text: M48T35AV 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated, ultralow power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T35AV M48T35AY: M48T35AV: PCDIP28 M48T35AV M48T35AY SOH28

    Untitled

    Abstract: No abstract text available
    Text: 4 TH 1S DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION LOC R E V 1S 1ONS D I ST BY TYCO ELECTRONICS CORPORAT 1ON. ALL RIGHTS RESERVED. COPYRIGHT - p LTR 3 0 , 5 . 5 4 > 1 9 ,7 ^ 6x2,54=15,24 2, 54 DESCR1PTION DATE issue. DWN APVD B First C E CR- 06 - 0 2 3 7 4 4


    OCR Scan     		PDF 22APR2008 21APR2000

    Untitled

    Abstract: No abstract text available
    Text: 4 TH 1S DRAWING IS UNPUBLI S HED. RELEASED FOR PUBLI CATI ON BY TYCO ELECTRONI CS COR POR AT I ON©11- RI GHT S COPYRIGHT - 3 0 , 5 _ q 20 LOC R E V 1S 1ONS DI S T RESERVED. p LTR DESCR1PTI ON B C D E ED 6 X 2 , 5 4 = 1 5 , 2 4 MI 2,54 I First DATE


    OCR Scan     		PDF 22APR2008 21APR2000