NTE2549
Abstract: No abstract text available
Text: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE2549
NTE2549
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NTE2549
Abstract: No abstract text available
Text: NTE2549 Silicon NPN Transistor Darlington Driver, Switch Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE2549
NTE2549
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2SC6011A
Abstract: 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS
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2SC6011/A
-2SC6011
-2SC6011A
2SA2151/A
2SC6011
2SC6011A
Pow011
2SC6011A
2SC6011
2sa2151
2SC601
2SA21
2SA2151A
230 10mhz
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NTE2578
Abstract: No abstract text available
Text: NTE2578 Silicon NPN Transistor TV Horizontal Deflection Output Features: D Excellent Fall Time Permitting Efficient Drive with Less Internal Dissipation Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE2578
400mA
500mA,
NTE2578
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BUW87A
Abstract: No abstract text available
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUW87A DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min) ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regulators and switching control amplifiers.
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BUW87A
BUW87A
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2SD1154
Abstract: horizontal transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1154 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V (Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for horizontal deflection output for B/W TV set.
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2SD1154
2SD1154
horizontal transistor
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Untitled
Abstract: No abstract text available
Text: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE2307
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BUX41
Abstract: NPN Transistor 8A
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BUX41 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 200V(Min) ·High Current Capability ·Good Linearity of hFE APPLICATIONS ·Designed for high speed, high current, high power
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BUX41
BUX41
NPN Transistor 8A
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NTE2307
Abstract: No abstract text available
Text: NTE2307 Silicon NPN Transistor High Gain Power Amp Features: D High Voltage D High DC Current Gain D High Collector Power Dissipation Capability Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V
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NTE2307
NTE2307
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Untitled
Abstract: No abstract text available
Text: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the
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ZXTN19100CFF
OT23F,
ZXTP19100CFF
OT23F
D-81541
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ZXTN19100CFF
Abstract: TS16949 ZXTN19100CFFTA ZXTP19100CFF ZXTN
Text: ZXTN19100CFF 100V, SOT23F, NPN high gain power transistor Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 4.5A VCE(sat) < 60mV @ 1A RCE(sat) = 38m⍀ PD = 1.5W Complementary part number ZXTP19100CFF Description C Advanced process capability has been used to maximise the
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ZXTN19100CFF
OT23F,
ZXTP19100CFF
OT23F
D-81541
ZXTN19100CFF
TS16949
ZXTN19100CFFTA
ZXTP19100CFF
ZXTN
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25C1252
Abstract: TE 8802
Text: 2SC3834 Silicon NPN Triple Diffused Planar Transistor Switching Transistor Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 120 V IEBO VEB=8V 100max µA 8 V V(BR)CEO IC=50mA 120min V 7(Pulse14) A hFE VCE=4V, IC=3A 70 to 220 IB 3 A VCE(sat) IC=3A, IB=0.3A
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2SC3834
Pulse14)
100max
120min
30typ
110typ
MT-25
25C1252
TE 8802
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2SC3857
Abstract: 2SA1493 DSA0016508
Text: 2SC3857 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1493 •Electrical Characteristics Ratings Unit ICBO VCB=200V 100max µA V IEBO VEB=6V 100max µA IC=50mA 200min V 200 24.4±0.2 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB
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2SC3857
2SA1493)
MT-200
100max
200min
50min
20typ
250typ
2SC3857
2SA1493
DSA0016508
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2SC3856
Abstract: 2SA1492 2SA1492 2SC3856 DSA0016508
Text: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions Ratings Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V VCE=4V, IC=3A 50min∗ A VCE(sat) IC=5A, IB=0.5A 2.0max V 130(Tc=25°C)
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2SC3856
2SA1492)
MT-100
100max
180min
50min
20typ
300typ
2SC3856
2SA1492
2SA1492 2SC3856
DSA0016508
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2SA1909
Abstract: 2SC5101
Text: 2SC5101 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1909 Application : Audio and General Purpose 2SC5101 Unit ICBO VCB=200V 10max µA VCEO 140 V IEBO VEB=6V 10max µA V 140min IC=50mA VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A
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2SC5101
2SA1909)
FM100
10max
140min
50min
20typ
250typ
2SA1909
2SC5101
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2SC3857
Abstract: 2SA1493
Text: 2SC3857 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1493 Symbol Conditions 2SC3857 Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V 24.4±0.2 VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=5A 50min∗ IB 5 A VCE(sat)
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2SC3857
2SA1493)
MT-200
100max
200min
50min
20typ
2SC3857
2SA1493
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2SC4388
Abstract: NPN Triple Diffused Planar Silicon Transistor transistor b 40 Ic-5A datasheet 2SA1673
Text: 2SC4388 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1673 V ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA IC=50mA 180min VCE=4V, IC=3A 50min∗ V IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A
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2SC4388
2SA1673)
FM100
10max
180min
50min
20typ
300typ
2SC4388
NPN Triple Diffused Planar Silicon Transistor
transistor b 40 Ic-5A datasheet
2SA1673
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2SC4388
Abstract: 2SA1673 33 NK 100
Text: 2SC4388 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1673 Unit V ICBO VCB=200V 10max µA VCEO 180 V IEBO VEB=6V 10max µA IC=50mA 180min VCE=4V, IC=3A 50min∗ V IB 4 A VCE(sat) IC=5A, IB=0.5A 2.0max V PC 85(Tc=25°C) W fT VCE=12V, IE=–0.5A
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2SC4388
2SA1673)
FM100
10max
180min
50min
20typ
300typ
2SC4388
2SA1673
33 NK 100
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2SC3856
Abstract: transistor 2sc3856 power transistor 2sc3856 2SA1492
Text: 2SC3856 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1492 Conditions 2SC3856 Unit V ICBO VCB=200V 100max µA VCEO 180 V IEBO VEB=6V 100max µA IC=50mA 180min V 6 V V(BR)CEO IC 15 A hFE VCE=4V, IC=3A 50min∗ IB 4 A VCE(sat) IC=5A, IB=0.5A
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2SC3856
2SA1492)
MT-100
100max
180min
50min
20typ
300typ
2SC3856
transistor 2sc3856
power transistor 2sc3856
2SA1492
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2SC3858
Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A
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2SC3858
2SA1494)
100max
MT-200
200min
50min
20typ
300typ
2SC3858
2SA1494
2sc3858 transistor
transistor 2sc3858
DSA0016508
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transistor 2sc3858
Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 200 V ICBO VCB=200V 100max µA IEBO VEB=6V 100max µA 200min V VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IC=10A, IB=1A 2.5max V IC=50mA 24.4±0.2 A PC 200(Tc=25°C)
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2SC3858
2SA1494)
100max
200min
MT-200
50min
20typ
transistor 2sc3858
2SC3858
2sc3858 transistor
2sa1494
characteristics 2SC3858
2sc3858 safe operating area
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powertech
Abstract: 200v 5a transistor
Text: "BIG IDEAS IN BIG POWER” • PowerTech 70 AMPERES PT-7509 SILICON NPN TRANSISTOR MAXIMUM RATINGS PT-7509 SYMBOL Collector-Base Voltage 200V V CBO Collector-Emitter Voltage 200V V CEO Emitter-Base Voltage 10V V EBO Peak Collector Current 'cm * 70A D.C. Collector Current
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PT-7509
PT-7509
200mA,
100KHz
FT-7509
powertech
200v 5a transistor
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Untitled
Abstract: No abstract text available
Text: 100 AMPERES P T -3 5 2 0 ULTRA FAST SWITCHING SILICON NPN TRANSISTOR SYMBOL PT-3520 Collector-Base Voltage VCBO 300V Collector-Emitter Voltage VCEO 200V Emitter-Base Voltage VEBO 10V Peak Collector Current •CM* D. C. Collector Current Power Dissipation at 25°C Case Temperature
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PT-3520
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Untitled
Abstract: No abstract text available
Text: "BIG IDEAS IN BIS POWER |A MR PowerTecn lO O A M P E R E S PT*3520 ULTRA FAST SW ITCHING SILICON NPN TRANSISTOR ABSOLUTE M A X IM U M RATINGS SYM BO L PT-3520 Collector-Base Voltage vceo 300V C ollector-Em itter Voltage VCEO 200V E m itter Base Voltage VEBO
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PT-3520
-100A
20OVr
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