1N5805 Search Results

1N5805 Price and Stock

Filter by Manufacturer


Microchip Technology Inc 1N5805 DIODE GEN PURP 125V 1A AXIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5805	Bulk			120	1 - 10 - 100 - 1000 $5.2125 10000 $5.2125	Buy Now
Avnet Americas	1N5805	Bulk		24 Weeks	167	1 - 10 - 100 - 1000 $4.61916 10000 $4.58136	Buy Now
	1N5805	Reel		24 Weeks	162	1 - 10 - 100 - 1000 $4.7658 10000 $4.7268	Buy Now
Newark	1N5805	Bulk			167	1 - 10 - 100 $4.91 1000 $4.72 10000 $4.72	Buy Now
Microchip Technology Inc	1N5805			24 Weeks		1 $5.28 10 $5.28 100 $4.91 1000 $4.45 10000 $4.45	Buy Now
Onlinecomponents.com	1N5805					1 - 10 - 100 $5.64 1000 $5.16 10000 $5.16	Buy Now

NAC	1N5805				66	1 $5.56 10 $5.56 100 $5.04 1000 $4.61 10000 $4.61	Buy Now
Master Electronics	1N5805					1 - 10 - 100 $5.64 1000 $5.16 10000 $5.16	Buy Now
Microchip Technology Inc 1N5805US DIODE GEN PURP 135V 1A D-5A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5805US	Bulk			100	1 - 10 - 100 $8.34 1000 $8.34 10000 $8.34	Buy Now
Avnet Americas	1N5805US	Bulk		24 Weeks	100	1 - 10 - 100 $8.03784 1000 $7.78104 10000 $7.78104	Buy Now
Mouser Electronics	1N5805US					1 - 10 - 100 $8.99 1000 $8.34 10000 $8.34	Get Quote
Newark	1N5805US	Bulk			100	1 - 10 - 100 $8.34 1000 $8.03 10000 $8.03	Buy Now
Microchip Technology Inc	1N5805US			24 Weeks		1 $8.99 10 $8.99 100 $8.34 1000 $7.57 10000 $7.57	Buy Now

NAC	1N5805US				38	1 $9.44 10 $9.44 100 $8.56 1000 $7.83 10000 $7.83	Buy Now
Master Electronics	1N5805US					1 - 10 - 100 $8.81 1000 $8.81 10000 $8.81	Buy Now
Microchip Technology Inc 1N5805-TR DIODE GEN PURP 125V 1A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5805-TR	Reel			162	1 - 10 - 100 - 1000 $5.06 10000 $5.06	Buy Now
Microchip Technology Inc 1N5805US-TR DIODE GEN PURP 135V 1A D-5A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1N5805US-TR	Reel			100	1 - 10 - 100 $8.51 1000 $8.51 10000 $8.51	Buy Now
Microchip Technology Inc 1N5805US/TR Diode Ultra Fast Recovery 125V 2.5A 2-Pin D-5A T/R - Tape and Reel (Alt: 1N5805US/TR)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	1N5805US/TR	Reel		24 Weeks	100	1 - 10 - 100 $8.18808 1000 $7.62348 10000 $7.62348	Buy Now
Mouser Electronics	1N5805US/TR					1 - 10 - 100 $9.16 1000 $8.51 10000 $8.51	Get Quote
Newark	1N5805US/TR	Reel			100	1 - 10 - 100 $8.51 1000 $8.18 10000 $8.18	Buy Now
Microchip Technology Inc	1N5805US/TR			24 Weeks		1 $9.16 10 $9.16 100 $8.51 1000 $7.73 10000 $7.73	Buy Now
NAC	1N5805US/TR				38	1 $9.62 10 $9.62 100 $8.72 1000 $7.98 10000 $7.98	Buy Now

Master Electronics	1N5805US/TR					1 - 10 - 100 $8.38 1000 $7.83 10000 $7.72	Buy Now

Find more 1N5805 price and stock on Findchips.com

1N5805 Datasheets (18)

Part	Manufacturer	Description	Datasheet Type	PDF
1N5805	EIC Semiconductor	Fast Recovery Glass Passivated Rectifier Diodes	Original	PDF
1N5805	Microsemi	Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE RECT ULT FAST REC A-PKG	Original	PDF
1N5805	Sussex Semiconductor	.25 TO 16 Amp Standard Recovery Rectifier Flip-Die	Original	PDF
1N5805	BKC International	2.5 Amp Voidless Fast Switching Rectifiers	Scan	PDF
1N5805	Microsemi	Rectifiers - High Efficiency, ESP, 2.5 Amp to 20 Amp	Scan	PDF
1N5805	Microsemi	Data Book 1983	Scan	PDF
1N5805	Unknown	Silicon Diode	Scan	PDF
1N5805	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1N5805	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF
1N5805	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
1N5805	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
1N5805	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
1N5805	OPTEK Technology	Fast Recovery Rectifier	Scan	PDF
1N5805	OPTEK Technology	FAST RECOVERY RECTIFIERS	Scan	PDF

1N5805	Semicon Components	Ultra Fast Recovery Epoxy, 2A thru 6A Axial, 50V thru 800V	Scan	PDF
1N5805	Unitrode	International Semiconductor Data Book 1981	Scan	PDF
1N5805US	Microsemi	SURFACE MOUNT VOIDLESSHERMETICALLY- SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS	Original	PDF
1N5805US	Microsemi	RECTIFIERS HIGH EFFICIENCY ESP 2.5 AMP TO 20 AMP	Original	PDF

1N5805 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SMD Transistors w04 sot-23 Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.	Original	PDF	represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
1N5806 Abstract: 1N5806 microsemi mil-prf-19500/477 Text: 1N5802 thru 1N5806 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “ultrafast recovery” rectifier diode series is military qualified to MIL-PRF19500/477 and is ideal for high-reliability applications where a failure cannot be	Original	PDF	1N5802 1N5806 MIL-PRF19500/477 1N5802US 1N5806US) 1N5802 1N5806 1N5806 microsemi mil-prf-19500/477
BC548 TRANSISTOR REPLACEMENT Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587 Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction	Original	PDF	BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
1N5806US Abstract: 1N5802US 1N5803US 1N5804US 1N5805US Text: Certificate : TH97/10561QM 1N5802US - 1N5806US GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS PRV : 50 - 150 Volts Io : 2.5 Amperes SMA DO-214AC Glass passivated junction chip High current capability High surge current capability High reliability Low reverse current	Original	PDF	TH97/10561QM 1N5802US 1N5806US DO-214AC) TW00/17276EM UL94V-O 1N5806US 1N5803US 1N5804US 1N5805US
S25400 Abstract: Sussex Semiconductor 100 Amp current 1000 volt diode s16 transistor SE 40 RECTIFIER 1N4001 1N4002 1N4003 1N4004 1N4005 Text: TM SUSSEX SEMICONDUCTOR, INC. RECTIFIER DIE 7 7 .25 TO 100 AMP STANDARD RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 GLASS PASSIVATED STANDARD RECOVERY RECTIFIER DIE	Original	PDF
MUR1560 equivalent Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in	Original	PDF	MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
1n5822 trr Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay	Original	PDF	MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
OZ 9983 Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —	Original	PDF	MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Diode 1N4007 DO-7 Rectifier Diode Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced	Original	PDF	MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
CAT7105CA Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A	Original	PDF	5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
1N5805 Abstract: No abstract text available Text: 1N5802 - 1N5806 GLASS PASSIVATED JUNCTION ULTRA FAST RECTIFIERS PRV : 50 - 150 Volts Io : 2.5 Amperes DO - 41 FEATURES : * * * * * * * * Glass passivated chip High current capability High surge current capability High reliability Low reverse current Low forward voltage drop	Original	PDF	1N5802 1N5806 DO-41 UL94V-O MIL-STD-202, 1N5803 1N5804 1N5805 1N5806
100 Amp current 1000 volt diode Abstract: Rectifier 6 amp 200 volt S25400 100 Amp current 1000 volt rectifier SE 40 RECTIFIER MPS 726 S3-500-150 S3-50-150 S25-50-50 S1-1000-150 Text: .25 TO 100 AMP FAST AND ULTRA-FAST RECOVERY RECTIFIER DIE SUSSEX SEMICONDUCTOR, INC. TM 12251 TOWNE LAKE DRIVE, FORT MYERS, FLORIDA, 33913 TEL: 239 768-6800 FAX: (239) 768-6868 GLASS PASSIVATED FAST AND ULTRA-FAST RECOVERY DIE REVERSE VOLTAGES - 50 TO 1000 VOLTS	Original	PDF
mil-prf-19500/477 Abstract: 1N5802 1N5802US 1N5803 1N5804 1N5805 1N5806 1N5806US JANTX 1N5804 Text: 1N5802 thru 1N5806 VOIDLESS-HERMETICALLY-SEALED ULTRAFAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION These “Ultrafast Recovery” rectifier diodes are military qualified to MIL-PRF-19500/477 and are ideal for high-reliability applications where a failure cannot be tolerated. These	Original	PDF	1N5802 1N5806 MIL-PRF-19500/477 1N5802US 1N5806US) 1N5802 mil-prf-19500/477 1N5803 1N5804 1N5805 1N5806 1N5806US JANTX 1N5804
Untitled Abstract: No abstract text available Text: 1N5802US thru 1N5806US SURFACE MOUNT VOIDLESSHERMETICALLY-SEALED ULTRA FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “Ultrafast Recovery” surface mount rectifier diode series is military qualified to MIL-PRF-19500/477 and is ideal for high-reliability applications where a failure	Original	PDF	1N5802US 1N5806US MIL-PRF-19500/477 1N5802 1N5806) 1N5802US 1N5806US

1N4942 Abstract: 1N4944 1N4946 1N4947 1N5614 1N5616 1N5618 1N5620 1N5622 11733 Text: B K C INTERNATIONAL 30E D • 117^3 D0D03DM 5 ■ " P 03-13 1N5614 Series • General Purpose Rectifiers in “A ” Body Package Type 1N5614 1N5616 1N5618 1N5620 1N5622 Peak Inverse Voltage MIN. PIV Breakdown VoKage (MIN.) Bv @ 50pA Average Rectified Current	OCR Scan	PDF	1N5614 1N5616 1N5618 1N5620 1N5622 100pA 1N5802 1N5803 1N5804 1N4942 1N4944 1N4946 1N4947 11733
A1W TRANSISTOR Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822 Text: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201	OCR Scan	PDF	403SE 1N1183 1N1615 1N3743 1N4006 1N5002 1N1185 1N1616 1N3744 1N4007 A1W TRANSISTOR N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
MB345 Abstract: MB323 MB317 ES1303 MX4115 MB313 B338 914f MX3120 MB339 Text: RECTIFIER and S IG N A L S E L E C T IO N GUIDE Avg. D C Output A .5 A Package Style Reverse Ree. Time 4-5 nsec 50-100 nsec 1.0 A A A A A A A A 250-400 nsec >400 nsec 20 nsec 75 nsec 100-200 nsec 250-500 nsec >500 nsec M B207 MB341 MB313 M B314 MB342 M B316	OCR Scan	PDF	1N4150 1N4150-1 MB341 MB313 1N4148 1N4148-1 MB315 MB209 MB342 MB215 MB345 MB323 MB317 ES1303 MX4115 B338 914f MX3120 MB339
IN5809 Abstract: 1N5815 Diode Text: RECTIFIERS 1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 High Efficiency, ESP, 2.5 Amp to 20 Amp FE A T U R E S DESCRIPTION • • • • Th is series of High Efficiency Power Rectifiers allows c ircu it designers to design high current, high frequency sup	OCR Scan	PDF	1N5802-1N5806 1N5807-1N5811 1N5812-1N5816 1N5804 1N5806 IN5809 1N58II 1N5815 Diode
BKC Semiconductors Abstract: USM35 Text: 2.5 Amp Voidless Fast Switching Rectifiers 1N5802 thru 1N5806 Applications Hard Glass Tungsten For use in hostile environments such as military and aerospace. Used where performance, surge and small footprint are important. These rectifiers are ideal for use in aircraft or satellite power $upplies.	OCR Scan	PDF	1N5802 1N5806 IL-S-19500 1N5802 1N5803 1N5804 1N5805 1NS806 BKC Semiconductors USM35
IN649 Abstract: BES100 bes1101 1n5615 do35 1N5805 DSAIH0002566 BES1104 HA2020 Text: R ectifiers 1N645 Series • 40 0m A Rectifiers in DO-35 Package 1 M axim um A verag e R ectified C urrent P eak inve rse V olta ge M IN . (P fV ) B re akd ow n V oltage (M IN .) @ 100 \|iA (B v ) ('o' Co) 25" C 150" C Forw ard V oltage Drop (V F) @ l F 4 00 m A	OCR Scan	PDF	1N645 DO-35 1N645-1 1N647-1 1N649-1 1N645 1N647 BES1304 BES1305 IN649 BES100 bes1101 1n5615 do35 1N5805 DSAIH0002566 BES1104 HA2020
Untitled Abstract: No abstract text available Text: 1N5802 thru 1N5806 M¡erosemi Corp. ' T h e d fo d e experts ☆JANS? SANTA ANA. CA For more information call: 714 979-8220 FE A T U R E S ULTRA FAST MILITARY RECTIFIERS • MICROMINIATURE PACKAGE • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE • TRIPLE LAYER PASSIVATION	OCR Scan	PDF	1N5802 1N5806 MIL-S-19500/477 1N5802
SD5171 Abstract: IN6095 DSR3050 DSR3051 DSR3100 DSR5050 DSR5051 1N5809 equivalent 1N5810 diode diode 151 Text: OPTEK TECHNOLOGY INC 4&E D • L^úSflO 0001427 TTl ■ OTK FAST RECOVERY RECTIFIERS 1N5415-1N5420; 1N5615-1N5623; 1N5802-1N5811 T 03-15 Fast Recovery Rectifiers This series of high speed rectifiers are constructed using Optek's "double-slug" technique, a voidless monolithic construction which is	OCR Scan	PDF	1N5415-1N5420; 1N5615-1N5623; 1N5802-1N5811 ta-17( SD51I6I SD5171I6I D0-203AB IN6095 IN6096 IN6097 SD5171 DSR3050 DSR3051 DSR3100 DSR5050 DSR5051 1N5809 equivalent 1N5810 diode diode 151
8603 Abstract: JANS1N5806US JANTXV1N5806 JANTX1N5806 JANS1n5806 Text: Microsemi Ultra Fast Rectifiers i Microsemi Division Type Package Outline v : , 13 A A A SQ. MELF A A S Q . MELF A A S Q . MELF A A S Q . MELF A A SQ. MELF A A SQ. MELF POWERMITE E E SQ. MELF E SQ . MELF E E S Q . MELF E E SQ. MELF A DO-201 AD DO-215AA DO-214BA	OCR Scan	PDF	DO-201 DO-215AA DO-21430 8603 JANS1N5806US JANTXV1N5806 JANTX1N5806 JANS1n5806
1N5A Abstract: SUES1110G SUES1309 MN5807 1N5804 SUES1310 SUES1102 SUES1306 SUES1104 SUES1105 Text: SEUICON COMPONENTS INC 2BE D • 0135157 0000043 fl ■ T"'03-l3 RECTIFIERS EPOXY AXIAL 800V FEATURES: d e s c r ip t io n • 2 Amp to 6 Amp Axial Leaded • 50V to 800 V PIV • 25 nS to 70 nS T RR These rectifiers are used in switching power supplies and regulators	OCR Scan	PDF	13S157 1N5A SUES1110G SUES1309 MN5807 1N5804 SUES1310 SUES1102 SUES1306 SUES1104 SUES1105

Privacy Settings

1N5805 Search Results

1N5805 Price and Stock

Microchip Technology Inc 1N5805

Microchip Technology Inc 1N5805US

Microchip Technology Inc 1N5805-TR

Microchip Technology Inc 1N5805US-TR

Microchip Technology Inc 1N5805US/TR

1N5805 Datasheets (18)

1N5805 Datasheets Context Search

SMD Transistors w04 sot-23

1N5806

BC548 TRANSISTOR REPLACEMENT

1N5806US

S25400

MUR1560 equivalent

1n5822 trr

OZ 9983

Diode 1N4007 DO-7 Rectifier Diode

CAT7105CA

1N5805

100 Amp current 1000 volt diode

mil-prf-19500/477

Untitled

1N4942

A1W TRANSISTOR

MB345

IN5809

BKC Semiconductors

IN649

Untitled

SD5171

8603

1N5A