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    Skyworks Solutions Inc 571FFC000159DG

    XTAL OSC VCXO 148.5000MHZ LVDS
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    DigiKey 571FFC000159DG 50
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    Mouser Electronics 571FFC000159DG
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    Skyworks Solutions Inc 571FFC000159DGR

    XTAL OSC VCXO 148.5000MHZ LVDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 571FFC000159DGR Reel 250
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    1FFC000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JS28F256P33

    Abstract: PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85
    Text: Numonyx StrataFlash Embedded Memory P33 Datasheet Product Features „ „ „ „ High performance: — 85 ns initial access — 52MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst


    Original     		PDF 52MHz 32-KByte 128-KByte 130nm 64-Mbit RD48F2000P0XBQ0 128-Mbit RD48F3000P0XBQ0 256-Mbit RD48F4000P0XBQ0 JS28F256P33 PC28F256P33 PF48F2000P0XBQ0 PC28F128P33B85 JS28F256P33B95 PC28F128P33 RC48F4400P0TB00 RC28F640P33B85 PC28F128P33T85 PC28F640P33B85

    pc28f00ap33

    Abstract: JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: „ TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


    Original     		PDF P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s pc28f00ap33 JS28F00AP33BF JS28F512P33BF PC28F00BP33EF PC28F00BP33 JS28F512P33EF PC28F512P33 JS28F512P33 PC28F00AP33EF JS28F512

    S29WS128R

    Abstract: sa512 S29WS512R wireless design guide 13th S29WS WS512R
    Text: S29WS-R MirrorBit Flash Family S29WS512R, S29WS256R, S29WS128R 512/256/128 Mb 32/16/8M x 16 bit Simultaneous Read/Write, Burst Mode 1.8 Volt-only Flash Memory in 65 nm MirrorBit Technology S29WS-R MirrorBit® Flash Family Cover Sheet Data Sheet (Advance Information)


    Original     		PDF S29WS-R S29WS512R, S29WS256R, S29WS128R 32/16/8M S29WS128R sa512 S29WS512R wireless design guide 13th S29WS WS512R

    JS28F256P30

    Abstract: PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85
    Text: Intel StrataFlash Embedded Memory P30 Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


    Original     		PDF 32-KByte 128-KByte 512-Mbit 64-Mbit RD48F2000P0ZBQ0 RD48F2000P0ZTQ0 PF48F2000P0ZBQ0 PF48F2000P0ZTQ0 128-Mbit RD48F3000P0ZBQ0 JS28F256P30 PC28F256P30T85 js28f128p30 RC28F640P30B85 RC48F4400P0VB00 JS28F256P30B95 JS28F256P30T95 JS28F128P30T PC28F128P30B85 JS28F128P30B85

    RC28F256P33BF

    Abstract: JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E
    Text: Numonyx Flash Memory P33-65nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,


    Original     		PDF P33-65nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KBcument; RC28F256P33BF JS28F256P33 PC28F256P33 pc28F256P33T RC28F256P33TF JS28F256P33BF PC28F256P33TF pc28f256p33b PC28F256P33BF PC48F4400P0TB0E

    JS28F256P30

    Abstract: JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 JS28F256P30T js48f4400p0vb00 RC48F4400P0VB00 JS28F128P30T85 PC28F256P30B85 PC28F640P30T85
    Text: Numonyx StrataFlash P30 Embedded Memory Datasheet Product Features „ High performance „ — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-to-data output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


    Original     		PDF 128-KByte 512-Mbit 64-Mbit 128-Mbit 256-Mbit 512-Mbit* RD48F2000P0ZBQ0 RD48F3000P0ZBQ0 RD48F4000P0ZBQ0 RD48F4400P0VBQ0 JS28F256P30 JS28F256P30T95 JS28F256P30B95 PC28F256P30T85 JS28F256P30T js48f4400p0vb00 RC48F4400P0VB00 JS28F128P30T85 PC28F256P30B85 PC28F640P30T85

    ws512P

    Abstract: D1191 SA517 S29WS-P SA516 d1271 s29ws S29WS128P S29WS256P S29WS512P
    Text: S29WS-P MirrorBit Flash Family S29WS512P, S29WS256P, S29WS128P 512/256/128 Mb 32/16/8 M x 16 bit 1.8 V Burst Simultaneous Read/Write MirrorBit Flash Memory S29WS-P Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion


    Original     		PDF S29WS-P S29WS512P, S29WS256P, S29WS128P S29WS-P ws512P D1191 SA517 SA516 d1271 s29ws S29WS128P S29WS256P S29WS512P

    js28f256p

    Abstract: RC48F4400P0TB0EJ
    Text: 256Mb and 512Mb 256Mb/256Mb , P33-65nm Features Micron Parallel NOR Flash Embedded Memory (P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF, PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE, PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE


    Original     		PDF 256Mb 512Mb 256Mb/256Mb) P33-65nm P33-65nm) RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF, PC28F256P33TFE, PC28F256P33BFE, js28f256p RC48F4400P0TB0EJ

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P33-65nm Features Micron Parallel NOR Flash Embedded Memory P33-65nm JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,


    Original     		PDF 512Mb, P33-65nm P33-65nm) JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA JS28F00AP33BFA,

    MT29FxG08

    Abstract: Micron MT29F8G08 MT29F2G08AABWP MT29F4G16BABWP Micron NAND MT29F2G16AABWP Micron NAND flash controller micron nand flash chip 8gb serial flash memory 8gb micron mt29f8
    Text: 2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)


    Original     		PDF x8/x16 MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP 09005aef818a56a7 09005aef81590bdd MT29FxG08 Micron MT29F8G08 MT29F2G08AABWP MT29F4G16BABWP Micron NAND MT29F2G16AABWP Micron NAND flash controller micron nand flash chip 8gb serial flash memory 8gb micron mt29f8

    29F2G08

    Abstract: MT29F2G16AABWP MT29FxG08 Micron MT29F8G08 MT29F4G16BABWP MX48
    Text: 2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)


    Original     		PDF x8/x16 MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP 09005aef818a56a7 09005aef81590bdd 29F2G08 MT29F2G16AABWP MT29FxG08 Micron MT29F8G08 MT29F4G16BABWP MX48

    pc28f00ap30

    Abstract: JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		PDF P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F512P30 PC28F00AP30TF pc28f00ap PC28F512P30BF PC28F00BP30EF pc28f00ap30ef PC28F00AP30BF JS28F512P30BF

    TSOP 48 pin flash gbit

    Abstract: JS28F00AP33BF 1FFC000
    Text: Numonyx Axcell P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features  High performance:  TSOP: — 105ns initial access time 512-Mbit, 1-Gbit Easy BGA and TSOP: — Buffered Enhanced Factory Programming at 2.0MByte/s (typ) using 512-word buffer


    Original     		PDF P33-65nm 512-Mbit 512-Mbit, 100ns 16-word 52MHz 105ns 512-word 46MByte/s TSOP 48 pin flash gbit JS28F00AP33BF 1FFC000

    MICRON mcp

    Abstract: PC28F256P30B P30-65nm PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F
    Text: 256Mb and 512Mb 256Mb/256Mb , P30-65nm Features Micron Parallel NOR Flash Embedded Memory (P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, PC48F4400P0VB0Ex, PF48F4000P0ZB/TQEx Features • Security – One-Time Programmable Register: 64 OTP bits,


    Original     		PDF 256Mb 512Mb 256Mb/256Mb) P30-65nm P30-65nm) JS28F256P30B/TFx, RC28F256P30B/TFx, PC28F256P30B/TFx, RD48F4400P0VBQEx, RC48F4400P0VB0Ex, MICRON mcp PC28F256P30B PC28F256P PC28F256P30BFF PF48F4400P0VBQEF PC28F256P30BFE JS28F256P30BF Micron 512MB NOR FLASH PF48F

    BA339

    Abstract: No abstract text available
    Text: Advance Information FLASH MEMORY K8C12 13 15ET(B)M 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339

    K1B3216B2E

    Abstract: Marvell PHY 88E1111 K1B3216B2E-B170 LTI-SASF546-P26-X1 12 pin 7 segment display layout -LD-5461BS Marvell PHY 88E1111 errata Marvell PHY 88E1111 Datasheet LT4601 lcd screen LVDS connector 40 pins LDQ-M2212R1
    Text: Stratix III 3SL150 Development Board Reference Manual 101 Innovation Drive San Jose, CA 95134 www.altera.com Document Version: Document Date: 1.4 November 2008 Copyright 2008 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other


    Original     		PDF 3SL150 K1B3216B2E Marvell PHY 88E1111 K1B3216B2E-B170 LTI-SASF546-P26-X1 12 pin 7 segment display layout -LD-5461BS Marvell PHY 88E1111 errata Marvell PHY 88E1111 Datasheet LT4601 lcd screen LVDS connector 40 pins LDQ-M2212R1

    MT29FxG08

    Abstract: MT29F2G08AABWP MT29F2G08 Micron MT29F8G08 29f2g08 flash chip 8gb MT29F4G16BABWP MT29F2G16AABWP FLASH MEMORY 29F Micron NAND
    Text: 2, 4, and 8Gb x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Figure 1: • Organization: • Page size: x8: 2,112 bytes 2,048 + 64 bytes x16: 1,056 words (1,024 + 32 words)


    Original     		PDF x8/x16 MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP 09005aef818a56a7 09005aef81590bdd MT29FxG08 MT29F2G08AABWP MT29F2G08 Micron MT29F8G08 29f2g08 flash chip 8gb MT29F4G16BABWP MT29F2G16AABWP FLASH MEMORY 29F Micron NAND

    pc28f00ap30

    Abstract: JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30
    Text: Numonyx Axcell P30-65nm Flash Memory 512-Mbit, 1-Gbit , 2-Gbit Datasheet Product Features „ High performance: Easy BGA: — 100ns initial access time 512-Mbit, 1-Gbit — 105ns initial access time (2-Gbit) — 25ns 16-word asynchronous-page read mode


    Original     		PDF P30-65nm 512-Mbit, 100ns 105ns 16-word 52MHz 110ns 512-word 46MByte/s pc28f00ap30 JS28F512P30 PC28F00AP30TF PC28F00AP30EF PC28F512P30 JS28F512 PC28F512P30TF JS28F512P30BF pc28f00ap30bf PC28F00BP30

    JS28F256P33

    Abstract: PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF
    Text: Numonyx AxcellTM Flash Memory P3365nm 256-Mbit, 512-Mbit (256M/256M) Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz (Easy BGA) with zero wait states,


    Original     		PDF P3365nm) 256-Mbit, 512-Mbit 256M/256M) 105ns 16-word 52MHz 512-word 32-KByte JS28F256P33 PC28F256P33 PC28F256P33BF RC28F256P33 RC28F256P33BF JS28F256P33BF JS28F256P33TF PC48F4400P0TB0E PC28F256P33B PC28F256P33TF

    Untitled

    Abstract: No abstract text available
    Text: 512Mb, 1Gb, 2Gb: P30-65nm Features Micron Parallel NOR Flash Embedded Memory P30-65nm JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx, JS28F00AP30TFx, JS28F00AP30EFx, PC28F00AP30BFx, PC28F00AP30TFx, PC28F00AP30EFx,


    Original     		PDF 512Mb, P30-65nm P30-65nm) JS28F512P30BFx, JS28F512P30EFx, JS28F512P30TFx, PC28F512P30BFx, PC28F512P30EFx, PC28F512P30TFx JS28F00AP30BFx,

    strataflash 512 p30

    Abstract: RC48F4400P0VB00 Migration Guide for Intel StrataFlash Memory J 3066* intel PF48F4400P0VTQ0
    Text: Intel StrataFlash Embedded Memory P30 Family Datasheet Product Features High performance — 85 ns initial access — 52 MHz with zero wait states, 17ns clock-todata output synchronous-burst read mode — 25 ns asynchronous-page read mode — 4-, 8-, 16-, and continuous-word burst mode


    Original     		PDF 32-KByte 128-KByte 256-Mbit 64-Mbit RD48F2000P0ZBQ0 RD48F2000P0ZTQ0 PF48F2000P0ZBQ0 PF48F2000P0ZTQ0 128-Mbit RD48F3000P0ZBQ0 strataflash 512 p30 RC48F4400P0VB00 Migration Guide for Intel StrataFlash Memory J 3066* intel PF48F4400P0VTQ0

    PC28F00AP33BF

    Abstract: L 1123 1FF4000
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit, 1-Gbit Monolithic Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


    Original     		PDF P33-65nm 512-Mbit, 105ns 16-word 52MHz 512-word 46MByte/s 32-KByte P33-65nm PC28F00AP33BF L 1123 1FF4000

    Untitled

    Abstract: No abstract text available
    Text: Numonyx Axcell™ P33-65nm Flash Memory 512-Mbit , 1-Gbit , 2-Gbit Datasheet Product Features „ „ „ High performance: — 95ns initial access time for Easy BGA — 105ns initial access time for TSOP — 25ns 16-word asynchronous-page read mode — 52MHz with zero WAIT states, 17ns clockto-data output synchronous-burst read


    Original     		PDF P33-65nm 512-Mbit 105ns 16-word 52MHz 512-word 46MByte/s 512Mbit, 32-KByte

    PD70F3447

    Abstract: uPD70F3187 uPD70F3447 board mk81 PD70F3347 PD70F3187 IF86 afcan V850E MK-92 mk102
    Text: User’s Manual TM V850E/PH2 32-Bit Single-Chip Microcontroller Hardware PD70F3187 μPD70F3447 Document No. U16580EE3V1UD00 Date Published January 2007 NEC Electronics Corporation 2007 Printed in Germany NOTES FOR CMOS DEVICES 1 VOLTAGE APPLICATION WAVEFORM AT INPUT PIN


    Original     		PDF V850E/PH2 32-Bit PD70F3187 PD70F3447 U16580EE3V1UD00 PD70F3447" U16580EE3V1UD00 PD70F3447 uPD70F3187 uPD70F3447 board mk81 PD70F3347 IF86 afcan V850E MK-92 mk102