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SMC Diode Solutions 11DQ10 DIODE SCHOTTKY 100V 1.1A DO41
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	11DQ10	Cut Tape	26,977		1	1 $0.16 10 $0.112 100 $0.16 1000 $0.0513 10000 $0.0461	Buy Now
	11DQ10	Reel	25,000		5,000	1 - 10 - 100 - 1000 - 10000 $0.03672	Buy Now
SMC Diode Solutions 31DQ10 DIODE SCHOTTKY 100V 3.3A DO201AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	31DQ10	Ammo Pack	2,500		1,250	1 - 10 - 100 - 1000 - 10000 $0.09459	Buy Now
Nexperia 74HC11D-Q100J IC GATE AND 3CH 3-INP 14SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	74HC11D-Q100J	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.18869	Buy Now
	74HC11D-Q100J	Cut Tape	2,500		1	1 $0.43 10 $0.303 100 $0.2338 1000 $0.19771 10000 $0.19771	Buy Now
	74HC11D-Q100J	Digi-Reel	2,500		1	1 $0.43 10 $0.303 100 $0.2338 1000 $0.19771 10000 $0.19771	Buy Now
Mouser Electronics	74HC11D-Q100J		2,615			1 $0.43 10 $0.27 100 $0.217 1000 $0.198 10000 $0.181	Buy Now
Rochester Electronics	74HC11D-Q100J		47,500		1	1 $0.1619 10 $0.1619 100 $0.1522 1000 $0.1376 10000 $0.1376	Buy Now
TTI	74HC11D-Q100J	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.183	Buy Now
Avnet Silica	74HC11D-Q100J			10 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	74HC11D-Q100J			10 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia 74LVC11D-Q100J IC GATE AND 3CH 3-INP 14SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	74LVC11D-Q100J	Cut Tape	2,465		1	1 $0.35 10 $0.242 100 $0.1856 1000 $0.15594 10000 $0.15594	Buy Now
	74LVC11D-Q100J	Digi-Reel	2,465		1	1 $0.35 10 $0.242 100 $0.1856 1000 $0.15594 10000 $0.15594	Buy Now
Mouser Electronics	74LVC11D-Q100J		2,219			1 $0.35 10 $0.216 100 $0.172 1000 $0.156 10000 $0.121	Buy Now
Rochester Electronics	74LVC11D-Q100J		37,500		1	1 $0.1113 10 $0.1113 100 $0.1046 1000 $0.0946 10000 $0.0946	Buy Now
TTI	74LVC11D-Q100J	Reel			5,000	1 - 10 - 100 - 1000 - 10000 $0.113	Buy Now
Avnet Silica	74LVC11D-Q100J			10 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	74LVC11D-Q100J			10 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Nexperia 74HC151D-Q100,118 IC MULTIPLEXER 1 X 8:1 16SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	74HC151D-Q100,118	Digi-Reel	2,302		1	1 $0.64 10 $0.457 100 $0.3577 1000 $0.30582 10000 $0.30582	Buy Now
	74HC151D-Q100,118	Cut Tape	2,302		1	1 $0.64 10 $0.457 100 $0.3577 1000 $0.30582 10000 $0.30582	Buy Now
Avnet Americas	74HC151D-Q100,118	Reel		8 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.17243	Buy Now
Mouser Electronics	74HC151D-Q100,118		970			1 $0.64 10 $0.41 100 $0.333 1000 $0.306 10000 $0.176	Buy Now
Rochester Electronics	74HC151D-Q100,118		4,960		1	1 $0.1624 10 $0.1624 100 $0.1527 1000 $0.138 10000 $0.138	Buy Now
Avnet Asia	74HC151D-Q100,118			8 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.23182	Buy Now

Avnet Silica	74HC151D-Q100,118			10 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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1DQ10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
U4B R950 Abstract: PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009 Text: MPC8560 PowerQUICC III Torridon User’s Guide MPC8560UG Rev. 0.1 12/2004 PRELIMINARY—SUBJECT TO CHANGE WITHOUT NOTICE How to Reach Us: Home Page: www.freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370	Original	PDF	MPC8560 MPC8560UG CH370 U4B R950 PC MOTHERBOARD GIGABYTE CIRCUIT diagram SCHEMATIC gigabyte MOTHERBOARD CIRCUIT diagram C828 3-pin transistor C1162 transistor C1162 gigabyte g31 MOTHERBOARD SERVICE MANUAL emp3128 transistor C1162 Scheme motorola r1009
Untitled Abstract: No abstract text available Text: 256K x 16, 512K x 8 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. M T28F4°0B1 FLASH MEMORY S m artV o ltag e FEATURES PIN ASSIGNMENT Top View • Seven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Four m ain m em ory blocks	OCR Scan	PDF	110ns 44-PiLASH 48-PIN
1DQ10 Abstract: No abstract text available Text: SCHOTTKY BARRIER DIODE 11DQ09 1DQ10 1.1A/90— 100V FEATU R E S °Miniature Size ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency ° High Surge Capability 0 30 Volts through 100 Volts Types Available ° 52mm Inside Tape Spacing Package Available	OCR Scan	PDF	A/90-- 11DQ09 11DQ10 1IDQ09 1DQ10 10x10mm
actron ab Abstract: 11a18 CHN 949 VF800 Text: 21Ü 8 Megabit 512K x 16-Bit Multi-Purpose Flash SST39VF800Q / SST39VF800 Advance Information FEATURES: • Organized as 512 K X 16 • Single 2.7-3.6V Read and Write Operations • V • • Endurance: 100,000 Cycles (typical) Greater than 100 years Data Retention	OCR Scan	PDF	16-Bit) SST39VF800Q SST39VF800 SST39VF800Q actron ab 11a18 CHN 949 VF800
1dq10 Abstract: No abstract text available Text: KM416C254B, KM416V254B CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V ,	OCR Scan	PDF	KM416C254B, KM416V254B 256Kx16 0D23223 1dq10
Untitled Abstract: No abstract text available Text: 8Mb SMART 5 BOOT BLOCK FLASH MEMORY M IC R O N I TECHNOLOGY, INC. FLASH MEMORY 5V Only, Dual Supply Smart 5 FEATURES • Eleven erase blocks: 16K B/8K -w ord boot block (protected) Tw o 8K B /4K -w ord param eter blocks Eight m ain m em ory blocks • Sm art 5 technology (B5):	OCR Scan	PDF	T28F800B5) 44-PIN
KM416S4030AT Abstract: ZX-03 KM416S4030AT-G Text: KM416S4030AT SDRAM ELECTRONICS 1M x 16Bitx 4 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • JEDEC standard 3.3V Power Supply. • LVTTL/SSTL_3 Class II compatible with multiplexed address. • 4 banks operation. • MRS cycle with address key programs.	OCR Scan	PDF	KM416S4030AT 16Bitx KM416S4030A/KM416S4031A KM416S4030AT) KM416S4030AT ZX-03 KM416S4030AT-G
M29F100 Abstract: M29F100B M29F100T Text: w , SGS-THOMSON M 29F100T M 29F100B k7 #» RitlDÊlMIlilLIKËinSMQtÊS 1 Mb x8/x16, Block Erase SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME	OCR Scan	PDF	M29F100T M29F100B x8/x16, M29F100 M29F100B
Ff-352 Abstract: Ff352 HE 301 chn 511 CHN 549 chn 440 Text: 16 Megabit 1M x 16-Bit High Speed Multi-Purpose Flash SST39LH160Q / SST39LH160 Advance Information FEATURES: • Organized as 1 M X 16 • Latched Address and Data • Single 3.0-3.6V Read and Write Operations • Fast Sector Erase and Word Program: •	OCR Scan	PDF	16-Bit) SST39LH160Q SST39LH160 SST39LH160Q Ff-352 Ff352 HE 301 chn 511 CHN 549 chn 440
Untitled Abstract: No abstract text available Text: in te i 28F016XD 16-MBIT 1 MBIT X 16 DRAM-INTERFACE FLASH MEMORY 85 ns Access Time (tRAc) — Supports both Standard and FastPage-Mode Accesses 56-Lead TSOP Type I Package Multiplexed Address Bus — RAS# and CAS# Control Inputs 2 ix A Typical Deep Power-Down	OCR Scan	PDF	28F016XD 16-MBIT 56-Lead 64-Kbyte 28F008SA
Untitled Abstract: No abstract text available Text: FLASHMEMORY CMOS MBM29F4ÖÖTÄ#o/Äi 2/MBM29F400 • FEATURES • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Uses same software commands as EzPROMs • Compatible with JEDEC-standard world-wide pinouts	OCR Scan	PDF	MBM29F4Ö 2/MBM29F400 48-pin 44-pin F9706
Untitled Abstract: No abstract text available Text: O K I Semiconductor MSM5416262 262,144-Word x 16-Bit Multiport DRAM DESCRIPTION The MSM5416262 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously.	OCR Scan	PDF	MSM5416262 144-Word 16-Bit MSM5416262 512-word
S772 Abstract: tms44165 Text: TMS44165, TMS44165P 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES SMHS166C - AUGUST 1992 - REVISED JUNE 1995 DZ PACKAGE TOP VIEW This data sheet is applicable to all TMS44165/Ps symbolized with Revision “D" and subsequent revisions as described on page 4-92.	OCR Scan	PDF	TMS44165, TMS44165P 262144-WORD 16-BIT SMHS166C TMS44165/Ps 1DQ14 S772 tms44165
27r1 Abstract: 0841B Text: Semiconductor General Description The ADC0841 is a CMOS 8-bit successive approximation A/D converter. Differential inputs provide low frequency input common mode rejection and allow offsetting the analog range of the converter. In addition, the reference input can	OCR Scan	PDF	ADC0841 ADC0841 27r1 0841B

KM416S1120AT Abstract: KM416S1120A KM416S1120AT-G KM416S1120AT-10 KM416S1120AT-12 Text: KM416S1120AT SDRAM ELECTRONICS 512 K x 16Bit x 2 Bank Synchronous DRAM FEATURES GENERAL DESCRIPTION • • • The KM416S1120A is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG'S high performance	OCR Scan	PDF	KM416S1120AT 16Bit KM416S1120A b414S 033G3D D03b2b2 KM416S1120AT KM416S1120AT-G KM416S1120AT-10 KM416S1120AT-12
C254D Abstract: KM416C Text: KM416C254D, KM416V254D CMOS DRAM 256K x 16 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 262,144 x 16 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V .	OCR Scan	PDF	KM416C254D, KM416V254D 256Kx16 DQODQ15 C254D KM416C
Untitled Abstract: No abstract text available Text: O K I Semiconductor MSM5416283 2 6 2 ,1 4 4 -W o rd x 1 6 -B it M u ltip o rt D R A M DESCRIPTION The MSM5416283 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and	OCR Scan	PDF	MSM5416283 MSM5416283 144-word 16-bit 512-word

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SMC Diode Solutions 11DQ10

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Nexperia 74HC11D-Q100J

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Nexperia 74HC151D-Q100,118

1DQ10 Datasheets Context Search

U4B R950

Untitled

1DQ10

actron ab

1dq10

Untitled

KM416S4030AT

M29F100

Ff-352

Untitled

Untitled

Untitled

S772

27r1

KM416S1120AT

C254D

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