Untitled
Abstract: No abstract text available
Text: HY2N70T / HY2N70FT 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS ON =6.5W@VGS=10V, ID=1A Features TO-220AB ITO-220AB • Low On-State Resistance • Fast Switching • Low Gate Charge & Low CRSS • Fully Characterized Avalanche Voltage and Current
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HY2N70T
HY2N70FT
O-220AB
ITO-220AB
2002/95/EC
O-220AB
ITO-220AB
MIL-STD-750
HY2N70T
2N70T
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Untitled
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY2N70D / HY2N70M 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=6.5W@VGS=10V, ID=1A
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HY2N70D
HY2N70M
O-252
O-251
2002/95/EC
O-252
O-251
250mA
125oC
-55oC
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2N70M
Abstract: No abstract text available
Text: PHASE WAVE 60Hz DERATING 1 –50 FORWARD CURVE AMBIENT 1FIG. 25TSINGLE 4 TEMPERATURE 75HALFCURRENT 10 100 20 ℃ 125 150 100 175 FIG. –2MAXIMUM 10 2SINGLE 5NON10 0.0 0.2 0.4 0.6 HY2N70D / HY2N70M 700V / 2A N-Channel Enhancement Mode MOSFET 700V, RDS(ON)=6.5W@VGS=10V, ID=1A
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HY2N70D
HY2N70M
O-252
O-251
2002/95/EC
O-252
O-251
250mA
125oC
-55oC
2N70M
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Untitled
Abstract: No abstract text available
Text: SVD1N70M/SVD1N70T 1A, 700V N-Channel MOSFET GENERAL DESCRIPTION These N-channel enhancement mode power field effect transistors are produced using Silan’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored
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SVD1N70M/SVD1N70T
O-251-3L
O-220-3L
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Untitled
Abstract: No abstract text available
Text: AP01L60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated D ▼ Fast Switching Speed ▼ Simple Drive Requirement BVDSS 700V RDS ON 12Ω ID G 1A S Description The TO-252 package is universally preferred for all commercial-industrial
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AP01L60H/J-H
O-252
AP01L60J)
O-251
100us
100ms
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B11 marking code
Abstract: 1A 700V MOSFET mosfet 700V 2A
Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM2N70
O-220
O-251
O-252
TSM2N70
B11 marking code
1A 700V MOSFET
mosfet 700V 2A
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1A 700V MOSFET
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
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KHB1D0N70G
Volt560V,
1A 700V MOSFET
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POWER MOSFET 4600
Abstract: 1A 700V MOSFET
Text: TSM2N70 700V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 700 6.5 @ VGS =10V 1 General Description The TSM2N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
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TSM2N70
O-220
O-251
O-252
TSM2N70
POWER MOSFET 4600
1A 700V MOSFET
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Mosfet
Abstract: SSF11NS70UF
Text: SSF11NS70UF 700V N-Channel MOSFET Main Product Characteristics VDSS 700V RDS on 0.45Ω (typ.) ID 11A Marking and Pin TO220F Schematic Diagram Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge
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SSF11NS70UF
O220F
SSF11NS70UF
Mosfet
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB1D0N70G TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power
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KHB1D0N70G
Drain-Sourceg12.
Fig13.
Fig14.
Fig15.
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FS2VS-14A
Abstract: FS2VS-14A mosfet
Text: MITSUBISHI Nch POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE FS2VS-14A OUTLINE DRAWING r Dimensions in mm 4.5 1.5MAX. 10.5MAX. 0 +0.3 –0 1.5 3.0 –0.5 +0.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.3 1 5 0.5 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V
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FS2VS-14A
O-220S
FS2VS-14A
FS2VS-14A mosfet
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65w 20v smps
Abstract: FS2UM-14A 1A 700V MOSFET
Text: MITSUBISHI Nch POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE FS2UM-14A OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN q ¡VDSS . 700V
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FS2UM-14A
O-220
65w 20v smps
FS2UM-14A
1A 700V MOSFET
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700v 5A mosfet
Abstract: No abstract text available
Text: SSFP2N70 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 700V Simple Drive Requirement ID25 = 2.1A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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SSFP2N70
00A/s
di/dt200A/S
width300S;
700v 5A mosfet
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700v 5A mosfet
Abstract: No abstract text available
Text: MP020-5 Offline, Primary-Side Regulator with CC/CV Control and a 700V FET The Future of Analog IC Technology DESCRIPTION FEATURES The MP020-5 is an offline, primary-side regulator that provides accurate constant voltage and constant current regulation without
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MP020-5
MP020-5
MS-012.
700v 5A mosfet
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FS2AS-14A
Abstract: 1A 700V MOSFET
Text: MITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE FS2AS-14A OUTLINE DRAWING Dimensions in mm 1.0 2.3 2.3 10MAX. 2.3MIN. 1.0MAX. 5.5 ± 0.2 4 0.9MAX. 0.5 ± 0.1 1.5 ± 0.2 6.5 5.0 ± 0.2 0.5 ± 0.2 2.3 0.8 1 2 3 wr q w e r q ¡VDSS . 700V
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FS2AS-14A
10MAX.
FS2AS-14A
1A 700V MOSFET
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Untitled
Abstract: No abstract text available
Text: MP020-5 Offline, Primary-Side Regulator with CC/CV Control and a 700V FET The Future of Analog IC Technology DESCRIPTION FEATURES The MP020-5 is an offline, primary-side regulator that provides accurate constant voltage and constant current regulation without
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MP020-5
MP020-5
MS-012.
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samsung roadmap
Abstract: MP6930 MP4050 MP44011 MP6923 HFC0500
Text: Monolithic Power Systems New Product for ACDC and Lighting Field Date: May 22, 2013 Confidential –Not approved for copy or Distribution The Future of Analog IC Technology ® Agenda: LED Lighting • Product Update of MPS Indoor Lighting – Non-dimming, Non-PFC
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PAR38
MP4028
MP4034
L6562
MP44011
MP44011
MP44010
samsung roadmap
MP6930
MP4050
MP6923
HFC0500
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1N65
Abstract: RD300
Text: Spec. No. : C437I3 Issued Date : 2009.01.23 Revised Date :2009.02.04 Page No. : 1/8 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN1N65I3 BVDSS : 700V @Tj=150℃ RDS ON : 9.5Ω ID : 1.0A Description The MTN1N65I3 is a N-channel enhancement-mode MOSFET, providing the designer with the best
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C437I3
MTN1N65I3
MTN1N65I3
O-251
MTN1N65re
UL94V-0
1N65
RD300
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2UM-14A HIGH-SPEED SWITCHING USE FS2UM-14A OUTLINE DRAWING Dimensions in mm 4.5 1.3 LU U LU qwe 0 ' q w e r q O- ' V dss . . 700V . 9.75Í1
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FS2UM-14A
O-220
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FS2VS-14A mosfet
Abstract: FS2VS-14A
Text: MITSUBISHI Neh POWER MOSFET FS2VS-14A HIGH-SPEED SWITCHING USE FS2VS-14A OUTLINE DRAWING L q Dimensions in mm J w e •V o +i CD O w r ' V dss . . 700V ' rDS ON (MAX) .9.75Q ' I d . .2A oi q w e
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FS2VS-14A
O-22QS
FS2VS-14A mosfet
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1A 700V MOSFET
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS2KM-14A HIGH-SPEED SWITCHING USE FS2KM-14A • Voss OUTLINE DRAWING . Dimensions in mm 700V • rDS ON (MAX) . 9 .7 5 Q
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FS2KM-14A
O-220FN
1A 700V MOSFET
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET I j FS2UM-14A ! HIGH-SPEED SWITCHING USE FS2UM-14A • VDSS . -700V • rDS ON (MAX) . 9.75Í2 • I D . 2A
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FS2UM-14A
-700V
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transistor 1000V
Abstract: RURP1580
Text: m h a rp u s c ti RURP1570, RURP1580 RURP1590, RURP15100 15A, 700V - 1 000V Ultrafast Diodes December 1993 Package Features • Ultrafast with Soft Recovery Characteristic tRR< 100ns JEDEC T0-220AC TOP VIEW • +175°C Rated Junction Temperature • Reverse Voltage Up to 1000V
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RURP1570,
RURP1580
RURP1590,
RURP15100
T0-220AC
100ns)
RURP1580,
RURP15100
transistor 1000V
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Untitled
Abstract: No abstract text available
Text: ÍS1HARRIS 8' RURG1570CC, RURG1580CC, RURG1590CC, RURG15100CC Aprii 1995 1 5A, 700V - 1 0OOV Ultrafast Dual Diodes Package Features JEDEC STYLE TO-247 • Ultrafast with Soft R ecovery. <100ns ANO DE 1 • Operating T em p eratu
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RURG1570CC,
RURG1580CC,
RURG1590CC,
RURG15100CC
O-247
100ns
RURG15100CC
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