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    19NOV2004 Search Results

    19NOV2004 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    12 sot23-3

    Abstract: TRANSISTOR Outlines 12 sot23 marking code 10 sot23 STM1001SBWX6F STM1001 N1418 13 SOT23-3
    Text: STM1001 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Open drain RST output ■ 30 ms or 140 ms reset pulse width min ■ Low supply current - 6 µA (typ) ■ Guaranteed RST assertion down to VCC= 1.0 V ■ Operating temperature:


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    STM1001 OT23-3 12 sot23-3 TRANSISTOR Outlines 12 sot23 marking code 10 sot23 STM1001SBWX6F STM1001 N1418 13 SOT23-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: EMIF06-10006F2 IPAD 6 line EMI filter and ESD protection Main product characteristics Where EMI filtering in ESD sensitive equipment is required: • Mobile phones and communication systems ■ Computers, printers and MCU Boards Description Flip-Chip


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    EMIF06-10006F2 EMIF06-10006F2 EMIF06 PDF

    Untitled

    Abstract: No abstract text available
    Text: STM1001 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Open drain RST output ■ 30 ms or 140 ms reset pulse width min ■ Low supply current - 6 µA (typ) ■ Guaranteed RST assertion down to VCC= 1.0 V ■ Operating temperature:


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    STM1001 OT23-3 PDF

    WW04

    Abstract: TRANSISTOR S 812 STM809 STM810 STM811 STM812 13 SOT23-3 9873
    Text: STM809, STM810 STM811, STM812 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Two output configurations – Push-pull RST output STM809/811 – Push-pull RST output (STM810/812) ■ 140 ms reset pulse width (min)


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    STM809, STM810 STM811, STM812 STM809/811) STM810/812) OT143 OT143-4 STM809 STM811 WW04 TRANSISTOR S 812 STM809 STM810 STM811 STM812 13 SOT23-3 9873 PDF

    MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR

    Abstract: DAP7 CSTCR4M00G55A-R0 CTSR J1850 LQFP100 LQFP64 PQFP100 ST92F150JDV1 ST92F250CV2
    Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)


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    ST92F124/ST92F150/ST92F250 8/16-BIT J1850 14x14 16-bit MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR DAP7 CSTCR4M00G55A-R0 CTSR LQFP100 LQFP64 PQFP100 ST92F150JDV1 ST92F250CV2 PDF

    E2 nand flash

    Abstract: st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A
    Text: AN1759 APPLICATION NOTE How to Connect Single Level Cell NAND Flash Memories to Build Storage Modules This application note explains how to connect two or more Single Level Cell NAND Flash memories to a microcontroller system bus, to build storage modules.


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    AN1759 NAND128R3A NAND256R3A NAND512R3A NAND01GR3A NAND128W3A NAND256W3A NAND512W3A NAND01GW3A NAND128R4A E2 nand flash st nand flash application note NAND512R4A NAND512W3A NAND256W3A NAND512W3B AN1759 NAND128R3A NAND128R4A NAND128W3A PDF

    ceramic capacitor, .1uF

    Abstract: 0.1uF Capacitor Ceramic capacitor 0.1uf MBRS240 Vishay capacitor LM3671-ADJ 6MB390EXR BAT54H DO1608C-472 SMT power inductor
    Text: N Altera Cyclone Complete Reference Design 3.3V in; 1.5V @ 1A out Vccint and 1.8V @ 600mA (Vccio) Designator Part Type Manufacturer Part No Description C1 C2 C3 C4 C5 C6 C7 C8 C9 D1 D2 L1 L2 P1 P2 P3 R1 R2 R3 R4 U1 U2 VISHAY CRCW0805Y104KXXA SANYO 6MB390EXR


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    600mA CRCW0805Y104KXXA 6MB390EXR 4MB390EXR 6CV100EX CRCW0805A6 C2012X5R1C105 ceramic capacitor, .1uF 0.1uF Capacitor Ceramic capacitor 0.1uf MBRS240 Vishay capacitor LM3671-ADJ 6MB390EXR BAT54H DO1608C-472 SMT power inductor PDF

    PxC00

    Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR CORE F5A ST92F124V1QB f2f decoder ic Transistor 952 1075-1 lta8 f5b FERRITE bead f2f decoder ic speed F90 P02
    Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)


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    ST92F124/ST92F150/ST92F250 8/16-BIT J1850 LQFP64 14x14 PQFP100 14x20 LQFP100 ST92F124R1T6 PxC00 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR CORE F5A ST92F124V1QB f2f decoder ic Transistor 952 1075-1 lta8 f5b FERRITE bead f2f decoder ic speed F90 P02 PDF

    DTV1500HD

    Abstract: DTV1500HDFP
    Text: DTV1500HD CRT TV HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE Table 1: Main Product Characteristics IF(AV) 6A VRRM 1500 V Tj 175°C VF (typ) 1.0 V trr (typ) 150 ns VFP (typ) 21 V K A FEATURES AND BENEFITS • ■ ■ ■ ■ ■ ■ A K High breakdown voltage capability


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    DTV1500HD O-220FPAC) O-220FPAC DTV1500HDFP DTV1500HD DTV1500HDFP PDF

    2901 jrc

    Abstract: jrc 2901 TRANSISTOR SMD MARKING CODE 3401 AN1900 ST7DALI 0X00 AN1324 HE10 SO20 6 pin TRANSISTOR SMD CODE 21
    Text: ST7DALI 8-BIT MCU WITH SINGLE VOLTAGE FLASH MEMORY, DATA EEPROM, ADC, TIMERS, SPI, DALI Memories – 8 Kbytes single voltage Flash Program memory with read-out protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K write/erase cycles guaranteed, data retention: 20 years at 55°C.


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: DTV1500HD CRT TV HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER DIODE Table 1: Main Product Characteristics IF(AV) 6A IFpeak (max) 12 A VRRM 1500 V Tj 175°C VF (typ) 1.0 V trr (typ) 150 ns VFP (typ) 21 V K A ) s ( t c u d o ) r s ( P t c e t u e d l o o r


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    DTV1500HD O-220FPAC DTV1500HDFP O-220FPAC) PDF

    AT91EB40

    Abstract: AT91M40800 TQFP100
    Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-Circuit Emulation


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    32-bit 16-bit 8-/16-bit 1393C 19-Nov-04 AT91EB40 AT91M40800 TQFP100 PDF

    st microelectronics datecode

    Abstract: EMIF06-10006F2 AN1235 AN1751 EMIF06
    Text: EMIF06-10006F2 6 LINES EMI FILTER AND ESD PROTECTION IPAD MAIN PRODUCT CHARACTERISTICS Where EMI filtering in ESD sensitive equipment is required: • Mobile phones and communication systems ■ Computers, printers and MCU Boards ® DESCRIPTION The EMIF06-10006F2 is a highly integrated


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    EMIF06-10006F2 EMIF06-10006F2 EMIF06 st microelectronics datecode AN1235 AN1751 PDF

    Untitled

    Abstract: No abstract text available
    Text: STM809, STM810 STM811, STM812 Reset circuit Features • Precision monitoring of 3 V, 3.3 V, and 5 V supply voltages ■ Two output configurations – Push-pull RST output STM809/811 – Push-pull RST output (STM810/812) ■ 140 ms reset pulse width (min)


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    STM809, STM810 STM811, STM812 STM809/811) STM810/812) OT143 OT143-4 STM809 STM811 PDF

    Untitled

    Abstract: No abstract text available
    Text: ST92F124xx/ST92F150Cxx/ ST92F150JDV1/ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ TM emulated EEPROM , CAN 2.0B and J1850 BLPD Datasheet − production data Features • Memories – Internal memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8 Kbytes, 1 Kbyte E3 TM


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    ST92F124xx/ST92F150Cxx/ ST92F150JDV1/ST92F250CV2 8/16-bit J1850 PDF

    jrc 2072

    Abstract: jrc 2073
    Text: ST7DALIF2 8-bit MCU family with single voltage Flash memory, data EEPROM, ADC, timers, SPI, DALI Features • ■ Memories – 8 Kbytes single voltage Flash Program memory with readout protection, In-Circuit Programming and In-Application programming ICP and IAP . 10K


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    PDF

    ST MICROELECTRONICS

    Abstract: st microelectronics datecode AN1235 AN1751 EMIF06 EMIF06-10006F2 JESD97
    Text: EMIF06-10006F2 IPAD 6 line EMI filter and ESD protection Main product characteristics Where EMI filtering in ESD sensitive equipment is required: • Mobile phones and communication systems ■ Computers, printers and MCU Boards Description Flip-Chip


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    EMIF06-10006F2 EMIF06-10006F2 EMIF06 ST MICROELECTRONICS st microelectronics datecode AN1235 AN1751 JESD97 PDF

    dolby pro logic 2

    Abstract: STV8218 dbx 215 equalizer Dolby prologic II simple deep bass amplifier 1412S stv8278 virtual surround dsp mcu DBX 202 SDIP64
    Text: STV82x8 Digital audio decoder/processor for BTSC television/video recorders Features • ■ ■ ■ ■ ■ Fully automatic multi-standard demodulation – M/N standards – FM mono – BTSC US MTS stereo and SAP standards Multi-channel capability – 3 x I²S digital inputs


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    STV82x8 TQFP100 TQFP100 dolby pro logic 2 STV8218 dbx 215 equalizer Dolby prologic II simple deep bass amplifier 1412S stv8278 virtual surround dsp mcu DBX 202 SDIP64 PDF

    IFR 630 MF

    Abstract: 4-bit parity checker mark/space odd/even DAP7 50 led flasher circuit with pdf format f2f decoder ic 2203F xck-p 5.5v 1.0f body marking MCL CSTCR4M00G55A-R0
    Text: ST92F124xx ST92F150Cxx ST92F150JDV1 ST92F250CV2 8/16-bit single voltage Flash MCU family with RAM, E³ emulated EEPROM , CAN 2.0B and J1850 BLPD • Memories – Internal Memory: Single Voltage Flash up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM)


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    ST92F124xx ST92F150Cxx ST92F150JDV1 ST92F250CV2 8/16-bit J1850 14x20 LQFP100 14x14 PQFP100 IFR 630 MF 4-bit parity checker mark/space odd/even DAP7 50 led flasher circuit with pdf format f2f decoder ic 2203F xck-p 5.5v 1.0f body marking MCL CSTCR4M00G55A-R0 PDF

    IFR 630 MF

    Abstract: MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR AN1152 basic stamp BS2 china tv schematic diagram CSTCR4M00G55A-R0 DAP7 STIM 202 diode MARKING f54 PQFP100
    Text: ST92F124/ST92F150/ST92F250 8/16-BIT SINGLE VOLTAGE FLASH MCU FAMILY WITH RAM, E3 TM EMULATED EEPROM , CAN 2.0B AND J1850 BLPD • Memories – Internal Memory: Single Voltage FLASH up to 256 Kbytes, RAM up to 8Kbytes, 1K byte E3 TM (Emulated EEPROM) – In-Application Programming (IAP)


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    ST92F124/ST92F150/ST92F250 8/16-BIT J1850 14x14 16-bit IFR 630 MF MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR AN1152 basic stamp BS2 china tv schematic diagram CSTCR4M00G55A-R0 DAP7 STIM 202 diode MARKING f54 PQFP100 PDF

    MA1705

    Abstract: No abstract text available
    Text: TPS70145, TPS70148 TPS70151, TPS70158 TPS70102 www.ti.com SLVS222D – DECEMBER 1999 – REVISED NOVEMBER 2004 Dual-Output Low-Dropout Voltage Regulators with Power-Up Sequencing for Split-Voltage DSP Systems FEATURES • • • • • • • • • •


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    TPS70145, TPS70148 TPS70151, TPS70158 TPS70102 SLVS222D 500mA 250mA 120ms MA1705 PDF

    ICE2 asic

    Abstract: No abstract text available
    Text: Features • Incorporates the ARM7TDMI ARM® Thumb® Processor Core • • • • • • • • • • • – High-performance 32-bit RISC Architecture – High-density 16-bit Instruction Set – Leader in MIPS/Watt – Embedded ICE In-Circuit Emulation


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    32-bit 16-bit 8-/16-bit 1393Câ 19-Nov-04 ICE2 asic PDF

    stv 4326

    Abstract: Inventec KNOCKHILL 10 inventec knockhill 10a CV136 AD30/stv 4326 ACDL B1413-1 ati sb400 FDS6900S
    Text: KNOCKHILL 10A PreMP BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Knockhill 10A SIZE CODE A3 REV DOC. NUMBER X01 CS SHEET 1 OF 50 TABLE OF CONTENTS PAGE


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    CN3000 AF312K SW3000 A106T SW3001 A106T CN3001 AF306K FIX4023 FIX4021 stv 4326 Inventec KNOCKHILL 10 inventec knockhill 10a CV136 AD30/stv 4326 ACDL B1413-1 ati sb400 FDS6900S PDF

    BAT54

    Abstract: RC410M BAT54C3 27b4 INVENTEC SP8K10SFD5_ROHM ATI SB450 KNOCKHILL 10 12ah3 P19E-6
    Text: San Antonio 10E PreMP BUILD EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV SIZE = 3 FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : Knockhill 10A SIZE CODE A3 DOC. NUMBER REV X01 CS SHEET 1 OF 50 TABLE OF CONTENTS PAGE


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    6-Aug-2005 D2000 CN2000 SW2001 A106T SW2000 A106T FIX14 FIX10 FIX11 BAT54 RC410M BAT54C3 27b4 INVENTEC SP8K10SFD5_ROHM ATI SB450 KNOCKHILL 10 12ah3 P19E-6 PDF