LL101A
Abstract: LL101C SD101 SD101A SD101AW SD101AWS SD101C SD101CWS
Text: SD101AW / 101BW / 101CW Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The low forward voltage drop and fast switching make it ideal for protection of e3 MOS devices, steering, biasing and coupling diodes for fast switching and low logic level
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SD101AW
101BW
101CW
SD101
LL101A
LL101C,
DO-35
SD101A
SD101C
OD-323
LL101C
SD101A
SD101AWS
SD101CWS
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Untitled
Abstract: No abstract text available
Text: SD103AWS / 103BWS / 103CWS Vishay Semiconductors Small Signal Schottky Diodes Features • The SD103 series is a metal-on-silicon Schottky barrier device which is protected e3 by a PN junction guard ring. • This diode is also available in the MiniMELF case with the type designations LL103A to
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SD103AWS
103BWS
103CWS
SD103
LL103A
LL103C,
DO-35
SD103A
SD103C
OD-123
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Untitled
Abstract: No abstract text available
Text: SS3P3 New Product Vishay General Semiconductor Low VF Current Density Surface Mount Schottky Barrier Rectifiers Major Ratings and Characteristics IF AV 3A VRRM 30 V IFSM 50 A EAS 11.25 mJ VF 0.43 V Tj max. 150 °C DO-220AA (SMP) Features Mechanical Data •
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DO-220AA
J-STD-020C
2002/95/EC
2002/96/EC
J-STD-002B
JESD22-B102D
08-Apr-05
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02333A
Abstract: CV marking code diode transient vishay tantalum body marking 595D CECC30801 Vishay DaTE CODE capacitor 293D
Text: 595D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT Conformal Coated, Maximum CV FEATURES • New extended range offerings • Large capacitance rating range Pb-free Available • Terminations: Tin 2 standard • 8 mm, 12 mm tape and reel packaging
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535BAAC
CECC30801
08-Apr-05
02333A
CV marking code diode transient
vishay tantalum body marking
595D
Vishay DaTE CODE capacitor 293D
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Untitled
Abstract: No abstract text available
Text: BAT46W Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features very low turn-on volte3 age and fast switching. • This device is protected by a PN junction guard ring against excessive voltage, such as
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BAT46W
DO-35
BAT46
2002/95/EC
2002/96/EC
OD-123
BAT46W
08-Apr-05
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SS2P6E3
Abstract: No abstract text available
Text: SS2P5 & SS2P6 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 2A VRRM 50 V, 60 V IFSM 50 A EAS 11.25 mJ VF 0.54 V Tj max. 150 °C DO-220AA (SMP) Features Mechanical Data
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DO-220AA
J-STD-020C
2002/95/EC
2002/96/EC
J-STD-002B
JESD22-B102D
08-Apr-05
SS2P6E3
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ss3p4
Abstract: SS3P4-E3/84A
Text: SS3P4 New Product Vishay General Semiconductor High-Current Density Surface Mount Schottky Rectifier Major Ratings and Characteristics IF AV 3A VRRM 40 V IFSM 50 A EAS 11.25 mJ VF 0.50 V Tj max. 150 °C DO-220AA (SMP) Features Mechanical Data • • •
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DO-220AA
J-STD-020C
2002/95/EC
2002/96/EC
J-STD-002B
JESD22-B102D
08-Apr-05
ss3p4
SS3P4-E3/84A
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Untitled
Abstract: No abstract text available
Text: 255D Vishay Sprague Organic Polymer, Low ESR, Molded Tantalum Surface Mount Capacitors FEATURES • Conductive polymer cathode technology • Low ESR • No-ignition failure mode RoHS • EIA standard case sizes COMPLIANT • 100 % surge current tested Lead Pb -free
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08-Apr-05
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Untitled
Abstract: No abstract text available
Text: M2035S & M2045S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TO-220AB Major Ratings and Characteristics IF AV 20 A VRRM 35 V, 45 V IFSM 200 A VF at IF = 20 A 0.55 V TJ max. 150 °C 3 2 1 1 2 3 CASE Features Mechanical Data
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M2035S
M2045S
O-220AB
2002/95/EC
2002/96/EC
O-220AB
J-STD-002B
JESD22-B102D
08-Apr-05
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BAT43W
Abstract: No abstract text available
Text: BAT42W / BAT43W Vishay Semiconductors Small Signal Schottky Diodes Features • These diodes feature very low turn-on voltage and fast switching. These devices are e3 protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges
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BAT42W
BAT43W
OD-123
BAT43W
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: 594D Vishay Sprague Solid Tantalum Chip Capacitors TANTAMOUNT Conformal Coated, Maximum CV, Low ESR FEATURES • • • • • • • PERFORMANCE/ELECTRICAL CHARACTERISTICS Operating Temperature: - 55 °C to + 85 °C To + 125 °C with voltage derating.
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535BAAE
CECC30801
08-Apr-05
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Steinel hl1802e
Abstract: raychem AD-1377 Steinel raychem splice kit ad 1377 crimp tool Tyco Electronics Crimp tool AD-1377 AD-1377 D020346 Raychem splice cv-1981
Text: SPECIFICATION CONTROL DRAWING MATERIALS 1. OUTER SEALING SLEEVE: High temperature stabilized cross-linked elastomer. Color: black. SEALING INSERTS: Stabilized modified elastomer-fluoropolymer thermoplastic. 2. SOLDERSHIELD: INSULATION SLEEVES: Heat-shrinkable, transparent blue, radiation cross-linked modified polyvinylidene fluoride.
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J-STD-006.
J-STD-004.
CV-1981
PR25A
HL-1802E
D-150-0321
D050482
D020346
16-Dec-05
Steinel hl1802e
raychem AD-1377
Steinel
raychem splice kit
ad 1377 crimp tool
Tyco Electronics Crimp tool AD-1377
AD-1377
D020346
Raychem splice
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X1002-QH
Abstract: No abstract text available
Text: 2.5-6.0/5.0-12.0 GHz Active Doubler QFN, 4x4 mm X1002QH December 2005 - Rev 16-Dec-05 Features Octave Bandwidth Operation +17 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply SMD, 4x4 mm QFN Package 100% RF, DC and Output Power Testing
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16-Dec-05
X1002QH
125mA
MIL-STD-883
CXX1234-XX-0L00
CXX1234-XX-0L0T
X1002-QH
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Untitled
Abstract: No abstract text available
Text: SD101AWS / 101BWS / 101CWS Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • The SD101 series is a Metal-on-silicon e3 Schottky barrier device which is protected by a PN junction guard ring • The low forward voltage drop and fast switching
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SD101AWS
101BWS
101CWS
SD101
LL101A
LL101C,
DO-35
SD101A
SD101C
OD-323
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IC 810 audio Power Amplifier
Abstract: AN17831 audio amplifier IC 810 AN17831A 810 audio amplifier IC AN17831A ic 810 ic 810 datasheet panasonic ag si 810
Text: Panasonic Semiconductor Singapore A Division of Panasonic Semiconductor Asia Pte Ltd Company Registration No. 197803125E 22, Ang Mo Kio Industrial Park 2, Singapore 569506. Tel: 65 64818811 Fax: (65)64816486 DOCUMENT COVER PAGE Note: This cover page establishes the Doc No., Title and current status of the attached document.
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197803125E
AN17831A
SDSC-PSE-AN17831A
16-DEC-05
8-NOV-04
16-DEC-04
FP-12S
FMSC-PSDA-002-01
8-NOV-04
IC 810 audio Power Amplifier
AN17831
audio amplifier IC 810
AN17831A
810 audio amplifier
IC AN17831A
ic 810
ic 810 datasheet
panasonic ag
si 810
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. — 2 - LOC ALL RIGHTS RESERVED. DIST AJ REVISIONS 6 P LTR B DESCRIPTION REVISED PER E C O - 0 5 - 0 1 5931 DATE DWN APVD 16DEC05 BM JL D D c 1274124 C
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16DEC05
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 6 7 TH IS DRAWING IS U N P U B LIS H E D . RELEASED ALL COPYRIGHT - FOR 4 5 2 3 PUBLICATION RIGHTS LOC RESERVED. CM BY TYCO ELECTRONICS CORPORATION. R E VIS IO N S D IS T 00 LTR B DE SC RIPTIO N REVISED PER E C O - 0 5 - 0 1 61 8 2 DATE DWN APVD 16DEC05 KW
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ECO-05-01
16DEC05
08APR2005
0BAPR2005
31MAR2000
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JIS B1122
Abstract: B1115 12512-15
Text: 3 4 THIS DRAWING IS UNPUBLISHED. Is COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS *35 J LTR DESCRIPTION G3 ADDED 1-5175975-2 DWN APVD 22APR08 TS KB 7° U y -22.5REF- D MOUNTING DIMENSION FOR P.C.B BOARD
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ECR--08--005948
22APR08
40REF
20PLAC
45OBSOLETE
30J3LT
31MAR2000
JIS B1122
B1115
12512-15
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