FCX718TA
Abstract: FCX718
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX718 ISSSUE 1 - DECEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 6A Peak Pulse Current Excellent HFE Characteristics up to 6Amps Extremely Low Saturation Voltage E.g. 16mv Typ. Extremely Low Equivalent On-resistance;
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FCX718
100ms
522-FCX718TA
FCX718TA
FCX718TA
FCX718
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FCX1051A
Abstract: FCX1151A DSA003684
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Amps Extremely Low Saturation Voltage E.g. 60mv Typ. Extremely Low Equivalent On-resistance;
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FCX1151A
FCX1051A
100ms
FCX1051A
FCX1151A
DSA003684
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verilog code for UART with BIST capability
Abstract: vhdl code for 8 to 3 encoder using concurrent sta 2 port register file open LVDS deserialization IP OC768 ARM10 ARM946 SR40 TLK2201 verilog code for ahb bus slave
Text: SR40 0.095-µm High-Speed Copper Standard Cell/Gate Array ASIC Version 1.1 May 17, 2001 Copyright Texas Instruments Incorporated, 2001 The information and/or drawings set forth in this document and all rights in and to inventions disclosed herein and patents which might be granted thereon disclosing or employing the
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24-hour
verilog code for UART with BIST capability
vhdl code for 8 to 3 encoder using concurrent sta
2 port register file
open LVDS deserialization IP
OC768
ARM10
ARM946
SR40
TLK2201
verilog code for ahb bus slave
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790a
Abstract: FCX790A DSA003688 fcx790
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX790A ISSUE 1 -JULY 2000 FEATURES * 2W POWER DISSIPATION * * * 6A Peak Pulse Current Excellent HFE Characteristics Low Saturation Voltages Partmarking Detail - C E 790A C B ABSOLUTE MAXIMUM RATINGS. PARAMETER
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FCX790A
15x15x)
100ms
790a
FCX790A
DSA003688
fcx790
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100 Amp current 1300 volt diode
Abstract: FCX690B FCX790A 40X40X0 DSA003687
Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX690B ISSSUE 1 - MARCH 1999 FEATURES * 2W POWER DISSIPATION * * * 6A Peak Pulse Current Gain of 400 @IC=1Amp Very Low Saturation Voltage Complimentary Type Partmarking Detail - C E FCX790A 690 C B ABSOLUTE MAXIMUM RATINGS.
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FCX690B
FCX790A
100ms
100 Amp current 1300 volt diode
FCX690B
FCX790A
40X40X0
DSA003687
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Untitled
Abstract: No abstract text available
Text: NPN small signal transistor BCX19 Dimensions Unit : mm Features (1) High gain and low saturation voltage. (2) Complements the BCX17. 2.9 0.4 (3) Package 1.3 2.4 Packaging specifications Type 0.95 0.45 0.2Min. BCX19 Taping Code T116 Basic ordering unit (pieces)
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BCX19
BCX17.
BCX19
R1120A
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Untitled
Abstract: No abstract text available
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSUE 3 - NOVEMBER 1995 FEATURES * 625mW POWER DISSIPATION * * * * * IC CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed) Extremely Low Saturation Voltage E.g. 8mV Typ.
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
FMMT617
FMMT717
FMMT718
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Transistor mlc 8050
Abstract: hynix nand naming rule xtal mco 8100 30591 DRIVER IC encoder 80058 MLC 8050 mlc 8050 38 mic pin configuration crc-103 80058 ENCODER MICREL MIC marking
Text: D D R R A A A A A FT FT FT FT FT D R R A A FT FT FT FT A A R R D D D D R R A FT FT FT A A R R D D D R A F FT FT A A R R D D User manual D Rev. 1.02 — 17 March 2010 R R R LPC32x0 and LPC32x0/01 User manual D D D UM10326 D FT FT A A R R D D D R A FT D R A
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UM10326
LPC32x0
LPC32x0/01
LPC3220,
LPC3230,
LPC3240,
LPC3250,
LPC3220/01,
LPC3230/01,
LPC3240/01,
Transistor mlc 8050
hynix nand naming rule
xtal mco 8100
30591 DRIVER IC
encoder 80058
MLC 8050
mlc 8050 38
mic pin configuration crc-103
80058 ENCODER
MICREL MIC marking
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FCX790A
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX790A ISSUE 3 - OCTOBER 2005 FEATURES * 2W POWER DISSIPATION * * * 6A Peak Pulse Current Excellent HFE Characteristics Low Saturation Voltages Partmarking Detail - C E 790 C B ABSOLUTE MAXIMUM RATINGS. PARAMETER
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FCX790A
100ms
FCX790A
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CHT5946PT
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT5946PT SURFACE MOUNT NPN Silicon Transistor VOLTAGE 50Volts CURRENT 5 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. SC-59/SOT-346 FEATURE * Surface mount package. SC-59/SOT-346
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CHT5946PT
50Volts
SC-59/SOT-346
SC-59/SOT-346)
CHT5946PT
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FMMT617
Abstract: FMMT619 FMMT-617 FMMT618 FMMT624 FMMT625 FMMT717 V12E FMMT SYM80L
Text: SuperSOT FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 SOT23 NPN SILICON POWER TRANSISTORS SWITCHING ISSUE 3- NOVEMBER Id 1995 FEATURES ‘ 625mW POWER DISSIPATION * Ic CONT 3A * 12A Peak Pulse Current * Excellent HFE Characteristics * Extremely Low Saturation Voltage E.g. 8mV Typ.
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
FMMT617
FMMT717
vE130
100mA
FMMT-617
FMMT618
FMMT624
FMMT625
FMMT717
V12E
FMMT
SYM80L
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verilog code for UART with BIST capability
Abstract: SR40 TLK2201 OC768
Text: SR40 0.095-µm High-Speed Copper Standard Cell/Gate Array ASIC March 4, 2002 Copyright Texas Instruments Incorporated, 2002 The information and/or drawings set forth in this document and all rights in and to inventions disclosed herein and patents which might be granted thereon disclosing or employing the
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24-hour
SRST142
verilog code for UART with BIST capability
SR40
TLK2201
OC768
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX717 ISSSUE 1 - MAY 1999 FEATURES * 2W POWER DISSIPATION * * * * 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage E.g. 12mv Typ. Extremely Low Equivalent On-resistance;
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FCX717
-10mA*
-50mA*
-10mA,
-50mA,
100MHz
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX617 ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * * 12A Peak Pulse Current Excellent HFE Characteristics up to 12 Amps Extremely Low Saturation Voltage E.g. 8mv Typ. Extremely Low Equivalent On-resistance;
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FCX617
100mA
100ms
100us
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX688B ISSSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER DISSIPATION * * * 10A Peak Pulse Current Excellent HFE Characteristics up to 10 Amps Extremely Low Saturation Voltage Complimentary Type Partmarking Detail -
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FCX688B
FCX789A
100ms
100us
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Untitled
Abstract: No abstract text available
Text: NPN small signal transistor BCX19 Features 1 High gain and low saturation voltage. (2) Complements the BCX17. Dimensions (Unit : mm) 2.9 0.4 Packaging specifications Package Type 0.95 0.45 0.2Min. BCX19 1.3 2.4 (3) Taping Code T116 Basic ordering unit (pieces)
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BCX19
BCX17.
BCX19
R1120A
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Untitled
Abstract: No abstract text available
Text: Transistors IC Transistor SMD Type Product specification FMMT617TA SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 ● Power Dissipation: Ptot=625mW 1 0.55 • Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 +0.1 0.97-0.1 ● Collector Current: IC=3A
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FMMT617TA
OT-23
625mW
200mA,
50MHz
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intel 8008 cpu
Abstract: No abstract text available
Text: UM10326 LPC32x0 and LPC32x0/01 User manual Rev. 3 — 22 July 2011 User manual Document information Info Content Keywords LPC3220, LPC3230, LPC3240, LPC3250, ARM9, LPC3220/01, LPC3230/01, LPC3240/01, LPC3250/01, 16/32-bit ARM microcontroller. Abstract User manual for LPC32x0.
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UM10326
LPC32x0
LPC32x0/01
LPC3220,
LPC3230,
LPC3240,
LPC3250,
LPC3220/01,
LPC3230/01,
LPC3240/01,
intel 8008 cpu
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BCX17
Abstract: BCX19 T116
Text: BCX19 Transistors NPN small signal transistor BCX19 zFeatures 1 High gain and low saturation voltage. 2) Complements the BCX17. zDimensions Unit : mm) 2.9 0.4 zPackaging specifications 0.95 0.45 0.2Min. BCX19 1.3 2.4 (3) Package Type Taping Code T116 Basic ordering unit (pieces)
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BCX19
BCX17.
BCX17
BCX17
BCX19
T116
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Untitled
Abstract: No abstract text available
Text: DC AXIAL FAN 15x15x06m m H ousing/B lade: Therm oplastic PBT, UL 9 4 V -0 Insulation Resistance: 1 0 M £2, 5 0 0 V D C /m in b e tw e e n b a re w ire and fram e D ie le c tric Strength: 5 m A max. 500V AC /m in b e tw e e n b a re w ire and fra m e O p e ra tio n Tem perature: - 10°C~70°C Humidity 35%-85%RH
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OCR Scan
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15x15x06m
FD1506S05W3-71
FD1506S05W5-71
FD1506S12W7-71
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Untitled
Abstract: No abstract text available
Text: SOT89 PNP SILICON POWER SWITCHING TRANSISTOR FCX1151A ISSUE 1 - NOVEMBER 1998 FEATURES * 2W POWER D IS S IP A T IO N * * * * 5A Peak Pulse Current Excellent HFE Characteristics up to 5 Am ps Extrem ely Low Saturation Voltage E.g. 60mv Typ. Extrem ely Low Equivalent On-resistance;
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FCX1151A
FCX1051A
-50mA,
50MHz
-20mA,
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Untitled
Abstract: No abstract text available
Text: SOT89 NPN SILICON POWER SWITCHING TRANSISTOR FCX617 ISSSU E 1 - NOVEMBER 1998 FEATU RES * 2W POWER D IS S IP A T IO N * * * * 12A Peak Pu lse Current Exce lle n t H FE C h a ra cte ristics up to 12 A m p s Extre m e ly Lo w S a tu ra tio n V o lta ge E.g. 8 m v T y p .
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FCX617
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Untitled
Abstract: No abstract text available
Text: SuperSO T SOT23 PNP SILICON POWER SWITCHING TRANSISTORS FMMT717 FMMT718 FMMT720 FMMT722 FMM r !'£ S ISSU E 3 JU N E 1996 FEATU RES • 625mW POWER DISSIPATION * * * * * lc CONT 2.5A lc Up To 10A Peak Pulse Current Excellent hfe Characteristics Up To 10A (pulsed)
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FMMT717
FMMT718
FMMT720
FMMT722
625mW
FMMT617
FMMT618
FMMT619
FMMT624
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Untitled
Abstract: No abstract text available
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISS U E 3 - N O V EM B ER 1995_ FEATURES * 625mW POWER DISSIPATIO N * * * * * lc C O N T 3 A 12A Peak Pulse Current Excellent HF£ Characteristics Up To 12A (pulsed)
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
625mW
100mA
FMMT618
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