Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 28, 2012 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M and 4M
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32:
UT8ER2M32:
UT8ER4M32:
x10-16
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32,
UT8ER2M32,
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zo 107
Abstract: No abstract text available
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 8, 2011 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M and 4M
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32:
UT8ER2M32:
UT8ER4M32:
111MeV-cm2/mg
zo 107
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UT8ER2M32
Abstract: UT8ER4M32 UT8ER1M32 SRAM edac
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet August 2, 2010 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M and 4M
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32:
UT8ER2M32:
UT8ER4M32:
111MeV-cm2/mg
SRAM edac
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UT8ER2M32
Abstract: No abstract text available
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 8, 2009 FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M and 4M
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32:
UT8ER2M32:
UT8ER4M32:
111MeV-cm2/mg
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 7, 2012 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M and 4M
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32:
UT8ER2M32:
UT8ER4M32:
x10-16
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Untitled
Abstract: No abstract text available
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Data Sheet January, 2013 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32,
UT8ER2M32,
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UT8ER4M32
Abstract: SRAM edac UT8ER4M32M 20820h ut8er1m32m EN 10204 3.1 aeroflex sram edac UT8ER2M32
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 9, 2010 www.aeroflex.com/memories FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M and 4M
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32:
UT8ER2M32:
UT8ER4M32:
UT8ER1M32,
SRAM edac
UT8ER4M32M
20820h
ut8er1m32m
EN 10204 3.1
aeroflex sram edac
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SRAM edac
Abstract: No abstract text available
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 8, 2011 www.aeroflex.com/memories INTRODUCTION The UT8ER1M32, UT8ER2M32, and UT8ER4M32 are high performance CMOS static RAM multichip modules MCMs
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32:
UT8ER2M32:
UT8ER4M32:
111MeV-cm2/mg
SRAM edac
|
aeroflex sram edac
Abstract: SRAM edac
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet June 25, 2010 FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M and 4M
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32:
UT8ER2M32:
UT8ER4M32:
111MeV-cm2/mg
aeroflex sram edac
SRAM edac
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aeroflex sram edac
Abstract: No abstract text available
Text: Standard Products UT8ER1M32 32Megabit SRAM MCM UT8ER2M32 64Megabit SRAM MCM UT8ER4M32 128Megabit SRAM MCM Preliminary Data Sheet December 16, 2009 FEATURES 20ns Read, 10ns Write maximum access times available Functionally compatible with traditional 1M, 2M and 4M
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UT8ER1M32
32Megabit
UT8ER2M32
64Megabit
UT8ER4M32
128Megabit
UT8ER1M32:
UT8ER2M32:
UT8ER4M32:
111MeV-cm2/mg
aeroflex sram edac
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A039h
Abstract: 3A400
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
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16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
A039h
3A400
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SGA23
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.
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16/4M
MBM29XL12DF
128M-bit,
90-pin
96-ball
SGA23
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Untitled
Abstract: No abstract text available
Text: EN71NS128C0 EN71NS128C0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 64 Megabit (4M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71NS128C0
EN71NS128C0
16-bit)
108MHz)
EN71NS
E29NS128
ENPSS64
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AT45DB1282
Abstract: BA10 PA10 PA11 PA12 PA13 1056B JEP-106 AT45DB128
Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • – RapidS Serial Interface: 40 MHz Maximum Clock Frequency SPI Modes 0 and 3 Compatible for Frequencies up to 33 MHz – Rapid8™ 8-bit Interface: 20 MHz Maximum Clock Frequency
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1056-byte
AT45DB1282
BA10
PA10
PA11
PA12
PA13
1056B
JEP-106
AT45DB128
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usb flash drive circuit diagram sandisk
Abstract: research paper on wireless usb 3.0 vhdl code for ECC encryption SAMSUNG NAND FLASH TRANSLATION LAYER FTL SAMSUNG NAND FLASH TRANSLATION LAYER suyin camera SUYIN Connector usb USB, Card Reader Audio player circuit sandisk mmc 16MB Micron 32MB NOR FLASH
Text: SmartMedia White Paper Technology and Market Forecast January, 2000 For more information Young Ju KANG Email : [email protected] SmartMedia™ White Paper 2000 (c) Samsung Electronics Co.Ltd. I.
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15-micron
256Mb
512Mb
usb flash drive circuit diagram sandisk
research paper on wireless usb 3.0
vhdl code for ECC encryption
SAMSUNG NAND FLASH TRANSLATION LAYER FTL
SAMSUNG NAND FLASH TRANSLATION LAYER
suyin camera
SUYIN Connector usb
USB, Card Reader Audio player circuit
sandisk mmc 16MB
Micron 32MB NOR FLASH
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0444c2
Abstract: AT45CS1282 BA10 PA10 PA11 PA12 PA13
Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • • – RapidS Serial Interface: 50 MHz Maximum Clock Frequency SPI Modes 0 and 3 Compatible for Frequencies up to 33 MHz – Rapid8™ 8-bit Interface: 20 MHz Maximum Clock Frequency
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336-byte
888-byte
488-byte
1056-byte
0444c2
AT45CS1282
BA10
PA10
PA11
PA12
PA13
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Untitled
Abstract: No abstract text available
Text: EN71NS128B0 EN71NS128B0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71NS128B0
EN71NS128B0
16-bit)
108MHz)
EN71NS
E29NS128
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S29GL128N90TFIR2
Abstract: s29gl256N10FAA02 S29GL512N11FFA02 S29GL512N11FFIV10E S29GL512N11FFA022 S29GL256N10TFI020H S29GL064A11FFIS20 s29gl064a90tfir9 s29gl016a90tfir10 S29GL016A90TFIR2
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA April 16, 2008 Obsolescence Notification No: Subject: 2702 Obsolescence of the Discrete S29GL016A, S29GL032A, S29GL064A, S29GL128N, S29GL256N, and S29GL512N Products Spansion LLC is announcing the obsolescence of all valid combinations of the products listed below.
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S29GL016A,
S29GL032A,
S29GL064A,
S29GL128N,
S29GL256N,
S29GL512N
S29GL016A
16-Megabit
S29GL032A
32-Megabit
S29GL128N90TFIR2
s29gl256N10FAA02
S29GL512N11FFA02
S29GL512N11FFIV10E
S29GL512N11FFA022
S29GL256N10TFI020H
S29GL064A11FFIS20
s29gl064a90tfir9
s29gl016a90tfir10
S29GL016A90TFIR2
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2431A
Abstract: LAA064 on 4409 AM29LV400BB TS048 transistor on 4409 am29LV400BB55reit AM29LV320DB90EIT Am29LV400BT55REI Am29LV256MH113REI
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 15, 2005 Advanced Change Notification No: Subject: 2545 Obsolescence of Am29LVxxxM, Am29LV400B, Am29LV320D, Am29PDL640G, Am29PDL129H Spansion LLC is announcing the final phase of previously announced migrations to next generation
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Am29LVxxxM
Am29LV400B
Am29LV320D
Am29PDL640G
Am29PDL129H
AM29LV2562MH/L
AM29LV256MH/L
AM29LV1282MH/L
AM29LV128MH/L
AM29LV6402MH/L
2431A
LAA064
on 4409
AM29LV400BB
TS048
transistor on 4409
am29LV400BB55reit
AM29LV320DB90EIT
Am29LV400BT55REI
Am29LV256MH113REI
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2472C
Abstract: AT45DB1282 BA10 PA10 PA11 PA12 PA13
Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • – RapidS Serial Interface: 40 MHz Maximum Clock Frequency SPI Modes 0 and 3 Compatible for Frequencies up to 33 MHz – Rapid8™ 8-bit Interface: 20 MHz Maximum Clock Frequency
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1056-byte
2472C
AT45DB1282
BA10
PA10
PA11
PA12
PA13
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Untitled
Abstract: No abstract text available
Text: EN71NS128B0 EN71NS128B0 Base MCP Stacked Multi-Chip Product MCP Flash Memory and RAM 128 Megabit (8M x 16-bit) CMOS 1.8 Volt-only Simultaneous Operation Burst Mode Flash Memory and 32 Megabit (2M x 16-bit) Pseudo Static RAM Distinctive Characteristics MCP Features
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EN71NS128B0
EN71NS128B0
16-bit)
108MHz)
EN71NS
E29NS128
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A53h
Abstract: AT45DB1282 BA10 PA10 PA11 PA12 PA13
Text: Features • Single 2.7V - 3.6V Supply • Dual-interface Architecture • • • • • • • • • • – RapidS Serial Interface: 40 MHz Maximum Clock Frequency SPI Modes 0 and 3 Compatible for Frequencies up to 33 MHz – Rapid8™ 8-bit Interface: 20 MHz Maximum Clock Frequency
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1056-byte
2472B
A53h
AT45DB1282
BA10
PA10
PA11
PA12
PA13
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3525a
Abstract: MRC D17 AT52SQ1283J PA30 PA31
Text: Module Features • • • • 128-Mbit Burst/Page Flash + 32-Mbit PSRAM Single 88-ball 8 mm x 10 mm x 1.2 mm CBGA Package 1.65V to 1.95V VCC 2.7V to 3.1V VCCQ for Flash + PSRAM 128-Mbit Flash Features • 8M x 16 Organization • High Performance • •
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128-Mbit
32-Mbit
88-ball
3525a
MRC D17
AT52SQ1283J
PA30
PA31
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