2431A
Abstract: LAA064 on 4409 AM29LV400BB TS048 transistor on 4409 am29LV400BB55reit AM29LV320DB90EIT Am29LV400BT55REI Am29LV256MH113REI
Text: SPANSION LLC 915 DeGuigne Drive, P.O. Box 3453 Sunnyvale, California 94088-3453, USA December 15, 2005 Advanced Change Notification No: Subject: 2545 Obsolescence of Am29LVxxxM, Am29LV400B, Am29LV320D, Am29PDL640G, Am29PDL129H Spansion LLC is announcing the final phase of previously announced migrations to next generation
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Am29LVxxxM
Am29LV400B
Am29LV320D
Am29PDL640G
Am29PDL129H
AM29LV2562MH/L
AM29LV256MH/L
AM29LV1282MH/L
AM29LV128MH/L
AM29LV6402MH/L
2431A
LAA064
on 4409
AM29LV400BB
TS048
transistor on 4409
am29LV400BB55reit
AM29LV320DB90EIT
Am29LV400BT55REI
Am29LV256MH113REI
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Spansion S29GL512N11
Abstract: No abstract text available
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
S29GLxxxN
27631sb2
Spansion S29GL512N11
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A 27631
Abstract: 1128 marking s29gl512 GL256N S29GL128N S29GL256N S29GL512N A24-A0
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
27631A1
27631A1
A 27631
1128 marking
s29gl512
GL256N
S29GL128N
S29GL256N
S29GL512N
A24-A0
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Spansion S29GL256N90
Abstract: S29GL512N11 S29GL256N10 S29GL512NH GL512N TXI002 S29GL256N90
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Data Sheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
TBD--64-Ball
27631A0
Spansion S29GL256N90
S29GL512N11
S29GL256N10
S29GL512NH
GL512N
TXI002
S29GL256N90
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SPANSION gl512
Abstract: GL512 S29GL256N 32mb GL512N TLD084 S71GL128NB0 S71GL256NB0 S71GL512NB0 S29GLxxxN GL128n
Text: S71GL512NB0/S71GL256NB0/ S71GL128NB0 Stacked Multi-chip Product MCP 512/256/128 Megabit (32/16/8 M x 16-bit) CMOS 3.0 Volt-only MirrorBitTM Page-mode Flash Memory with 32 Megabit (2M x 16-bit) pSRAM ADVANCE INFORMATION Distinctive Characteristics MCP Features
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S71GL512NB0/S71GL256NB0/
S71GL128NB0
16-bit)
S71GL128N,
S71GL256N)
S71GL512N)
TLD084)
TLA084)
SPANSION gl512
GL512
S29GL256N 32mb
GL512N
TLD084
S71GL128NB0
S71GL256NB0
S71GL512NB0
S29GLxxxN
GL128n
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S29GLXXXP
Abstract: S70GL02GS S29GLxxxS
Text: Reset Voltage and Timing Requirements for MirrorBit Flash Application Note Synopsis MirrorBit NOR flash has several unique reset control signal timing requirements. Timing requirements vary by MirrorBit process and family 110 nm, 90 nm, 65 nm, GLxxxN, WSxxxP, etc… . System designers must
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S29GLxxxN,
S29PLxxxN,
S29WSxxxN,
S29NSxxxN
S29GLxxxP,
S29NSxxxP,
S29WSxxxP
S29GLxxxR,
S29WSxxxR,
S29NSxxxR,
S29GLXXXP
S70GL02GS
S29GLxxxS
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Spansion S29GL256N
Abstract: No abstract text available
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
27631A3
Spansion S29GL256N
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A 27631
Abstract: 27631 1128 marking GL256N S29GL128N S29GL256N S29GL512N SA4871 SA417 24A000
Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages
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S29GLxxxN
S29GL512N,
S29GL256N,
S29GL128N
128-word/256-byte
8-word/16-byte
27631A1
27631A1
A 27631
27631
1128 marking
GL256N
S29GL128N
S29GL256N
S29GL512N
SA4871
SA417
24A000
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abort
Abstract: No abstract text available
Text: MirrorBit Flash Memory Write Buffer Programming and Page Buffer Read Application Note -XO\ 7KH IROORZLQJ GRFXPHQW UHIHUV WR 6SDQVLRQ PHPRU\ SURGXFWV WKDW DUH QRZ RIIHUHG E\ ERWK $GYDQFHG 0LFUR 'HYLFHV DQG XMLWVX $OWKRXJK WKH GRFXPHQW LV PDUNHG ZLWK WKH QDPH RI WKH FRPSDQ\ WKDW RULJ
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