TIB0
Abstract: K9F6408Q0C K9F6408Q0C-B K9F6408U0C K9F6408U0C-B K9F6408U0C-QCB0
Text: K9F6408Q0C K9F6408U0C FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Jul. 24 . 2001 Advance 0.1 1. IOL R/B of 1.8V device is changed. Nov. 5 . 2001 Preliminary -min. Value: 7mA ->3mA
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K9F6408Q0C
K9F6408U0C
K9F6408U0C-Y
K9F6408U0C
9mmX11mm
63ball
48ball
K9F6408Q0C-D
K9F6408Q0C-B
K9F6408U0C-D
TIB0
K9F6408Q0C
K9F6408Q0C-B
K9F6408U0C-B
K9F6408U0C-QCB0
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SAMSUNG K9F1208U0B
Abstract: K9F1208* technical K9F1208U0B K9F1208U0B-YCB0 K9F1208D0B K9F1208D0B-D K9F1208D0B-Y K9F1208Q0B K9F1208Q0B-D K9F1208U0B-D
Text: K9F1208Q0B K9F1208D0B K9F1208U0B Advance FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 Initial issue. Draft Date Remark Aug. 24th 2003 Advance Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9F1208Q0B
K9F1208D0B
K9F1208U0B
SAMSUNG K9F1208U0B
K9F1208* technical
K9F1208U0B
K9F1208U0B-YCB0
K9F1208D0B
K9F1208D0B-D
K9F1208D0B-Y
K9F1208Q0B
K9F1208Q0B-D
K9F1208U0B-D
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512M x 8 Bit NAND Flash Memory
Abstract: K9K1208U0A K9K1208U0A-VCB0 K9K1208U0A-VIB0
Text: K9K1208U0A-VCB0, K9K1208U0A-VIB0 FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Initial issue April. 17 2001 Remark Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
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K9K1208U0A-VCB0,
K9K1208U0A-VIB0
K9K1208U0A-Vnever
48-PIN
1217F
50TYP
512M x 8 Bit NAND Flash Memory
K9K1208U0A
K9K1208U0A-VCB0
K9K1208U0A-VIB0
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K9F2808U0B-YCB0
Abstract: K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808U0B K9F2808U0B-DCB0 K9F2808U0B-VCB0 K9F2808U0B-Y
Text: K9F2808Q0B-DCB0,DIB0 K9F2808U0B-VCB0,VIB0 K9F2808Q0B:Preliminary K9F2808U0B-YCB0,YIB0 K9F2808U0B-DCB0,DIB0 FLASH MEMORY Document Title 16M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Advance 0.0 Initial issue. May 28’th 2001
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K9F2808Q0B-DCB0
K9F2808U0B-VCB0
K9F2808Q0B
K9F2808U0B-YCB0
K9F2808U0B-DCB0
K9F2808U0B
K9F2808Q0B
200us
300us
100ns
K9F2808Q0B-D
K9F2808U0B-Y
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K9F1208B0B
Abstract: K9F1208B0B-G K9F1208B0B-Y K9F1208R0B K9F1208R0B-G K9F1208U0B K9F1208U0B-G K9F1208U0B-V K9F1208U0B-Y K9F1208U0BYCB0
Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.
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K9F1208R0B
K9F1208B0B
K9F1208U0B
K9F1208B0B
K9F1208B0B-G
K9F1208B0B-Y
K9F1208R0B
K9F1208R0B-G
K9F1208U0B
K9F1208U0B-G
K9F1208U0B-V
K9F1208U0B-Y
K9F1208U0BYCB0
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Samsung K9F5608U0D PCB0
Abstract: K9F5608U0D K9F5608U0D-P K9F5608U0D-FCB0 pcb0
Text: K9F5608R0D K9F5608U0D K9F5608D0D FLASH MEMORY K9F5608X0D INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9F5608R0D
K9F5608U0D
K9F5608D0D
K9F5608X0D
Samsung K9F5608U0D PCB0
K9F5608U0D-P
K9F5608U0D-FCB0
pcb0
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samsung 2GB X16 Nand flash
Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9F1G08Q0M-YCB0
K9F1G08U0M-YCB0
K9F1G16Q0M-YCB0
K9F1G16U0M-YCB0
K9F1G08U0M-VCB0
samsung 2GB X16 Nand flash
SAMSUNG 4gb NAND Flash Qualification Report
samsung 2GB X8 Nand flash
SAMSUNG NAND Flash Qualification Report
SAMSUNG 128Mb NAND Flash Qualification Reliability
SAMSUNG 256Mb NAND Flash Qualification Reliability
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K9F1G08U0A-PCB0
Abstract: No abstract text available
Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)
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K9F1G08R0A
K9F1G08U0A
K9K2G08U1A
100ns
K9F1G08U0A-PCB0
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Samsung NAND
Abstract: No abstract text available
Text: K9F5608Q0B-DCB0,DIB0 K9F5608U0B-YCB0,YIB0 K9F5608U0B-DCB0,DIB0 K9F5616Q0B-DCB0,DIB0 K9F5616U0B-YCB0,YIB0 K9F5616U0B-DCB0,DIB0 K9F5608U0B-VCB0,VIB0 K9F56XXQ0B:Preliminary K9F5616X0B:Preliminary FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
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K9F5608Q0B-DCB0
K9F5608U0B-YCB0
K9F5608U0B-DCB0
K9F5616Q0B-DCB0
K9F5616U0B-YCB0
K9F5616U0B-DCB0
K9F5608U0B-VCB0
K9F56XXQ0B
K9F5616X0B
Samsung NAND
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SAMSUNG 4gb NAND Flash Qualification Report
Abstract: No abstract text available
Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue
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K9F1G08Q0M-YCB0
K9F1G08U0M-YCB0
K9F1G16Q0M-YCB0
K9F1G16U0M-YCB0
K9F1G08U0M-VCB0
SAMSUNG 4gb NAND Flash Qualification Report
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Untitled
Abstract: No abstract text available
Text: K9F5608Q0C-DCB0,DIB0 K9F5608U0C-YCB0,YIB0 K9F5608U0C-DCB0,DIB0 K9F5616Q0C-DCB0,DIB0 K9F5616U0C-YCB0,YIB0 K9F5616U0C-DCB0,DIB0 Advance K9F5608U0C-VCB0,VIB0 FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History
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K9F5608Q0C-DCB0
K9F5608U0C-YCB0
K9F5608U0C-DCB0
K9F5616Q0C-DCB0
K9F5616U0C-YCB0
K9F5616U0C-DCB0
K9F5608U0C-VCB0
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Untitled
Abstract: No abstract text available
Text: FLASH MEMORY K9K2G08U0A Document Title 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 History Draft Date Remark 1. Initial issue May. 31. 2004 Advance The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the
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K9K2G08U0A
K9K2G08U0A-Y
K9K2G08U0A-V
K9K2G08U0A
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Untitled
Abstract: No abstract text available
Text: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.
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K9F6408Q0C-BCB0
K9F6408Q0C-BIB0
K9F6408U0C-TCB0
K9F6408U0C-TIB0
K9F6408U0C-BCB0
K9F6408U0C-BIB0
K9F6408U0C-VCB0
K9F6408U0C-VIB0
K9F6408U0C-Y
K9F6408U0C
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Untitled
Abstract: No abstract text available
Text: K9F2808Q0C-BCB0,BIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-BCB0,BIB0 K9F2816Q0C-BCB0,BIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-BCB0,BIB0 K9F2808U0C-VCB0,VIB0 Advance FLASH MEMORY Document Title 16M x 8 Bit , 8M x 16 Bit NAND Flash Memory Revision History Revision No. History
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K9F2808Q0C-BCB0
K9F2808U0C-YCB0
K9F2808U0C-BCB0
K9F2816Q0C-BCB0
K9F2816U0C-YCB0
K9F2816U0C-BCB0
K9F2808U0C-VCB0
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K9F1208D0A
Abstract: K9F1208Q0A K9F1208Q0A-HCB0 K9F1208U0A K9F1208U0A-FCB0 K9F1216D0A K9F1216U0A K9F1216U0A-HCB0 K9F1216U0A-PCB0 Maker
Text: K9F1208Q0A K9F1208D0A K9F1216D0A K9F1208U0A K9F1216U0A FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial issue. Apr. 25th 2002 0.1 TBGA K9F12XXX0A-DCB0/DIB0 size information is changed.
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K9F1208Q0A
K9F1208D0A
K9F1216D0A
K9F1208U0A
K9F1216U0A
K9F12XXX0A-DCB0/DIB0)
K9F1208Q0A
K9F1208Q0A-HCB0
K9F1208U0A-FCB0
K9F1216D0A
K9F1216U0A
K9F1216U0A-HCB0
K9F1216U0A-PCB0
Maker
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TwB 75
Abstract: K9E2G08U0M K9E2G08U0M-V K9E2G08U0M-Y hamming code 512 bytes
Text: Preliminary FLASH MEMORY K9E2G08U0M Document Title 256M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. June. 8th 2004 Advanced 0.1 1. Technical note is changed Oct. 25th 2004 Preliminary 0.2 1. The flow chart to creat the initial invalid block table is changed.
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K9E2G08U0M
TwB 75
K9E2G08U0M
K9E2G08U0M-V
K9E2G08U0M-Y
hamming code 512 bytes
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K9F1208U0B-YCB0
Abstract: 8bit nand flash K9F1208U0B-G SAMSUNG K9F1208U0B K9F1208R0B K9F1208R0B-G K9F1208B0B K9F1208B0B-G K9F1208B0B-Y K9F1208U0B
Text: K9F1208R0B K9F1208B0B K9F1208U0B FLASH MEMORY Document Title 64M x 8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 Initial issue. 1. Note 1 Program/Erase Characteristics is added( page 14 ) 2. NAND Flash Technical Notes is changed.
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K9F1208R0B
K9F1208B0B
K9F1208U0B
K9F1208U0B-YCB0
8bit nand flash
K9F1208U0B-G
SAMSUNG K9F1208U0B
K9F1208R0B
K9F1208R0B-G
K9F1208B0B
K9F1208B0B-G
K9F1208B0B-Y
K9F1208U0B
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10D7E
Abstract: si 13001 closed caption tr 13001 CS 13001 13001 datasheet transistor te 13001 datasheet for ME 11282 13001 switching circuit 13001 TO 92
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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M306V0ME-XXXFP,
M306V0EEFP
10D7E
si 13001
closed caption
tr 13001
CS 13001
13001 datasheet
transistor te 13001
datasheet for ME 11282
13001 switching circuit
13001 TO 92
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Untitled
Abstract: No abstract text available
Text: Advanced FLASH MEMORY K9E2G08B0M Document Title 256M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 8th 2004 Advanced 0.1 1.Note1 of Program/Erase characteristics is added 2.Technical note is changed
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K9E2G08B0M
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Untitled
Abstract: No abstract text available
Text: San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel. 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799 ELECTRONICS March. 2003 512Mb/256Mb 1.8V NAND Flash Errata Description : Some of AC characteristics are not meeting the specification. > AC characteristics : Refer to Table
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512Mb/256Mb
K9F1208Q0A-XXB0,
K9F1216Q0A-XXB0
K9F5608Q0C-XXB0,
K9F5616Q0C-XXB0
K9K1208Q0C-XXB0,
K9K1216Q0C-XXB0
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K9F6408U0C-VCB0
Abstract: No abstract text available
Text: K9F6408Q0C-BCB0,K9F6408Q0C-BIB0 K9F6408U0C-TCB0,K9F6408U0C-TIB0 K9F6408U0C-BCB0,K9F6408U0C-BIB0 K9F6408U0C-VCB0,K9F6408U0C-VIB0 FLASH MEMORY Document Title 8M x 8 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue.
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K9F6408Q0C-BCB0
K9F6408Q0C-BIB0
K9F6408U0C-TCB0
K9F6408U0C-TIB0
K9F6408U0C-BCB0
K9F6408U0C-BIB0
K9F6408U0C-VCB0
K9F6408U0C-VIB0
K9F6408U0C-Y
K9F6408U0C
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Untitled
Abstract: No abstract text available
Text: K9F2808Q0C-BCB0,BIB0 K9F2808U0C-YCB0,YIB0 K9F2808U0C-BCB0,BIB0 K9F2816Q0C-BCB0,BIB0 K9F2816U0C-YCB0,YIB0 K9F2816U0C-BCB0,BIB0 K9F2808U0C-VCB0,VIB0 Advance FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History
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K9F2808Q0C-BCB0
K9F2808U0C-YCB0
K9F2808U0C-BCB0
K9F2816Q0C-BCB0
K9F2816U0C-YCB0
K9F2816U0C-BCB0
K9F2808U0C-VCB0
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K9F1208U0A-VCB0
Abstract: No abstract text available
Text: K9F1208Q0A-DCB0,DIB0 K9F1208U0A-YCB0,YIB0 K9F1208U0A-DCB0,DIB0 K9F1216Q0A-DCB0,DIB0 K9F1216U0A-YCB0,YIB0 K9F1216U0A-DCB0,DIB0 Preliminary K9F1208U0A-VCB0,VIB0 FLASH MEMORY Document Title 64M x 8 Bit , 32M x 16 Bit NAND Flash Memory Revision History Revision No. History
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K9F1208Q0A-DCB0
K9F1208U0A-YCB0
K9F1208U0A-DCB0
K9F1216Q0A-DCB0
K9F1216U0A-YCB0
K9F1216U0A-DCB0
K9F1208U0A-VCB0
K9F12XXX0A-DCB0/DIB0)
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K9F5608U0C-PCB0
Abstract: No abstract text available
Text: K9F5608Q0C K9F5608D0C K9F5608U0C K9F5616Q0C K9F5616D0C K9F5616U0C FLASH MEMORY Document Title 32M x 8 Bit , 16M x 16 Bit NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Apr. 25th 2002 Advance 1.0 1.Pin assignment of TBGA dummy ball is changed.
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K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
20mA--
K9F5608U0C-PCB0
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