Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    K9E2G08B0M Search Results

    K9E2G08B0M Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    K9E2G08B0M-FCB0 Samsung Electronics IC FLASH MEM PARL 2.5V 2GBIT 256MX8 30NS 48WSOP-I Original PDF
    K9E2G08B0M-FIB0 Samsung Electronics IC FLASH MEM PARL 2.5V 2GBIT 256MX8 30NS 48WSOP-I Original PDF
    K9E2G08B0M-PCB0 Samsung Electronics IC FLASH MEM PARL 2.5V 2GBIT 256MX8 30NS 48TSOP-I Original PDF
    K9E2G08B0M-PIB0 Samsung Electronics IC FLASH MEM PARL 2.5V 2GBIT 256MX8 30NS 48TSOP-I Original PDF
    K9E2G08B0M-VCB0 Samsung Electronics IC FLASH MEM PARL 2.5V 2GBIT 256MX8 30NS 48WSOP-I Original PDF
    K9E2G08B0M-YCB0 Samsung Electronics IC FLASH MEM PARL 2.5V 2GBIT 256MX8 30NS 48TSOP-I Original PDF
    K9E2G08B0M-YIB0 Samsung Electronics IC FLASH MEM PARL 2.5V 2GBIT 256MX8 30NS 48TSOP-I Original PDF

    K9E2G08B0M Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Advanced FLASH MEMORY K9E2G08B0M Document Title 256M x 8 Bits NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 8th 2004 Advanced 0.1 1.Note1 of Program/Erase characteristics is added 2.Technical note is changed


    Original     		PDF K9E2G08B0M