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    Untitled

    Abstract: No abstract text available
    Text: HAT1026R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 5 6 7 8 D D D D 1 ,2 ,3 Source 4 Gate 5, 6, 7, 8 Drain 1 2


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    PDF HAT1026R ADE-208-457 MS-012AA

    NMOS-2

    Abstract: No abstract text available
    Text: HAT1031T Silicon P-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-528C 4th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP-8 D o 8 D o 1,8 Drain 2, 3, 6, 7 Source


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    PDF HAT1031T ADE-208-528C 10x413x1 NMOS-2

    Untitled

    Abstract: No abstract text available
    Text: HAT3004R Silicon N Channel / P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline S O P -8 5 6 1, 3 Source 2 ,4 Gate 5, 6, 7, 8 Drain


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    PDF HAT3004R ADE-208-500 10x413x1 MS-012