10X15X0 Search Results

10X15X0 Price and Stock

Filter by Manufacturer


LeaderTech 44-CBSA-1.0X1.5X0.4 RF SHIELD 1" X 1.5" THROUGH HOLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	44-CBSA-1.0X1.5X0.4	Bulk	421		1	1 $8.1 10 $5.558 100 $4.1674 1000 $3.41407 10000 $3.30759	Buy Now
Newark	44-CBSA-1.0X1.5X0.4	Bulk	2		1	1 $4.62 10 $4.62 100 $4.62 1000 $4.62 10000 $4.62	Buy Now
RS	44-CBSA-1.0X1.5X0.4	Bulk			1	1 $22.18 10 $19.96 100 $18.85 1000 $18.85 10000 $18.85	Get Quote
LeaderTech 49-CBSA-1.0X1.5X0.4 RF SHIELD 1" X 1.5" THROUGH HOLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	49-CBSA-1.0X1.5X0.4	Bulk	100		1	1 $27.25 10 $27.25 100 $16.4209 1000 $16.4209 10000 $16.4209	Buy Now
LeaderTech 24-CBSA-1.0X1.5X0.2 RF SHIELD 1" X 1.5" THROUGH HOLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	24-CBSA-1.0X1.5X0.2	Bulk	14		1	1 $28.53 10 $21.237 100 $17.2859 1000 $16.53752 10000 $16.53752	Buy Now
Newark	24-CBSA-1.0X1.5X0.2	Bulk			28	1 - 10 - 100 $22.61 1000 $22.61 10000 $22.61	Buy Now
RS	24-CBSA-1.0X1.5X0.2	Bulk			1	1 $43.73 10 $39.36 100 $39.36 1000 $39.36 10000 $39.36	Get Quote
LeaderTech 54-CBSA-1.0X1.5X0.5 RF SHIELD 1" X 1.5" THROUGH HOLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	54-CBSA-1.0X1.5X0.5	Bulk	9		1	1 $29.37 10 $21.91 100 $17.8648 1000 $17.15 10000 $17.15	Buy Now
Newark	54-CBSA-1.0X1.5X0.5	Bulk			20	1 - 10 $23.05 100 $18.53 1000 $17.98 10000 $17.98	Buy Now
RS	54-CBSA-1.0X1.5X0.5	Bulk			20	1 - 10 - 100 $26.59 1000 $23.8 10000 $23.8	Get Quote
LeaderTech 58-CBSA-1.0X1.5X0.5 RF SHIELD 1" X 1.5" THROUGH HOLE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	58-CBSA-1.0X1.5X0.5	Bulk			20	1 - 10 - 100 $22.4725 1000 $22.4725 10000 $22.4725	Buy Now

Find more 10X15X0 price and stock on Findchips.com

10X15X0 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Bluetooth Energy Meter ckt diagram Abstract: 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11 Text: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7170 BY： Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC JUL. 2001 7170 N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification- 3	Original	PDF	FD501 FD504 FD502 FD503 Bluetooth Energy Meter ckt diagram 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11
8F157 Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s	Original	PDF	NE021 NE02135 NE02139 07/07B NE02133" NE02133 8F1573FD7D76BE9F795396E6F54D44. 30-Sep-2010 8F157 relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D
2SC1424 Abstract: 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE734 NE73400 NE73416 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • DUAL CHIP CONFIGURATIONS	Original	PDF	NE734 NE73435) NE734 OT-143) 24-Hour 2SC1424 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE73400 NE73416
VT8362 Abstract: CP2216 VR501 TM41PUM220 kn133 RLS414B B1225 PCI1420 F3437 p4 Titan VRM 10.0 Text: 7321 7321 N/B Maintenance Contents Contents 1. Hardware Engineering Specification 4 1.1 Introduction 4 1.2 System Hardware Parts 1.3 Other Functions	Original	PDF	FD500 DOT040 DOT040 PC500 PR500 FD503 FD502 VT8362 CP2216 VR501 TM41PUM220 kn133 RLS414B B1225 PCI1420 F3437 p4 Titan VRM 10.0
Micro-X Marking 865 Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	PDF	NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F
s-parameter s11 s12 s21 Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s	Original	PDF	NE021 NE02135 NE02139 NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02139-T1 s-parameter s11 s12 s21 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431
NE02135 Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	PDF	NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR
NE021 microwave oscillator Abstract: 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	PDF	NE021 NE021 NE02107 OT-23) 34-6393/FAX NE021 microwave oscillator 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225
NE02107 Abstract: 2SC2149 2SC2351 NE021 NE02100 NE02133 NE02135 NE02139 18752 60S12 Text: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION	Original	PDF	NE021 07/07B NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 NE02107 2SC2149 2SC2351 NE02100 NE02133 NE02135 NE02139 18752 60S12
TX38D85VC1CAA Abstract: SD6109 DIODE S3V 81 SiS900 lan 30-pin connector for LVDS hannstar foxconn s3v83 qe r542 orion crt monitor circuit diagram MITAC MPU Text: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7521 Plus/N BY： Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC AUG. 2001 7521Plus / N N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification - 3	Original	PDF	7521Plus TX38D85VC1CAA SD6109 DIODE S3V 81 SiS900 lan 30-pin connector for LVDS hannstar foxconn s3v83 qe r542 orion crt monitor circuit diagram MITAC MPU
2SC2570 Abstract: 2sc2570 transistor NE02132 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,	OCR Scan	PDF	NE021 NE02107 PACKAGEOUTUNE33 OT-23) b427525 00b5b07 2SC2570 2sc2570 transistor NE02132
SVI 3104 c Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or	OCR Scan	PDF	AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
OCI 531 Abstract: No abstract text available Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION	OCR Scan	PDF	NE73435) NE734 NE73400) NE7343-323) OT-23) 24-Hour OCI 531
2SC1424 Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F	OCR Scan	PDF	NE734 NE73435) NE73400) PACKAGEOUTUNE30 PACKAGEOUTUNE33 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) 2SC1424 MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185

JF11 Abstract: NE02133-T1B Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression	OCR Scan	PDF	NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11
SAA 1006 Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression	OCR Scan	PDF	NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K
Untitled Abstract: No abstract text available Text: 2 I DIST / 1 REVISIONS P LTR DESCRIPTION D DATE OWN 27NOV09 REVISED EC R — 0 9 — 0 2 5 9 8 0 APVD JL WK D D 4 9.58 46.0 0 ± 0 .1 P xq & 0.30 4 8.56 MOUNT EAR 2 PLC 4 3 .0 3 ± 0 .0 6 0 .75 2 PLC CM C C PTs Tt t I 0 .75 \|3 1 .5 4 \|	OCR Scan	PDF	27NOV09 10X15X0 31MAR2000
1734471 Abstract: No abstract text available Text: 30.48 = h•<d■ ’d" ro r-. 1.27 X 24 4 9 . 5 f i+ 0 . 0 5 Tu 48.56 0.30 / 0.75 o CH I CM tj CL ^ CM LO o o -H TYP CJ CD _ i CL Ò -a CM O LO 00 0.75 NOTE: _ LI I I —ri 1. MATERIAL: HOUSING: HIGH TEMP. THERMOPLASTIC UL 9 4 V -0 , COLOR: WHITE. CONTACTS: BRASS.	OCR Scan	PDF
2SC1424 Abstract: 2SC4090 017 545 71 32 02 2SC2026 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 I • SMALL COLLECTOR CAPACITANCE: 1 pF	OCR Scan	PDF	NE73435) NE734 NE73400) S12S21\| 2SC1424 2SC4090 017 545 71 32 02 2SC2026
2SC1424 Abstract: s2l sot23 Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIG UR E: < 3 dB at 500 MHz • HIGH G A IN : 15 dB at 500 MHz B • HIGH G AIN BAN D W ID TH PR O D U C T: 2 GHz 3 GHz for the NE73435 • S M A LL C O LLEC TO R C A P A C IT A N C E : 1 pF	OCR Scan	PDF	NE73435) NE734 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) PACKAGEOUTUNE39 2SC1424 s2l sot23
2sc2570 transistor Abstract: t0-t01 2sc2570 NE02132 Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 1 8 .5 d B at 5 0 0 M H z • LOW NOISE FIGURE: 1 .5 dB a t 5 0 0 M H z • HIGH POWER GAIN: 12 d B at 2 G H z • LARGE DYNAMIC RANGE: 19 d B m at 1 dB ,	OCR Scan	PDF	NE021 OT-23) 2sc2570 transistor t0-t01 2sc2570 NE02132
23STYLE Abstract: No abstract text available Text: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION	OCR Scan	PDF	NE73435) NE734 NE73400) NE73400 OT-323) OT-23) 23STYLE

Privacy Settings

10X15X0 Search Results

10X15X0 Price and Stock

LeaderTech 44-CBSA-1.0X1.5X0.4

LeaderTech 49-CBSA-1.0X1.5X0.4

LeaderTech 24-CBSA-1.0X1.5X0.2

LeaderTech 54-CBSA-1.0X1.5X0.5

LeaderTech 58-CBSA-1.0X1.5X0.5

10X15X0 Datasheets Context Search

Bluetooth Energy Meter ckt diagram

8F157

2SC1424

VT8362

Micro-X Marking 865

s-parameter s11 s12 s21

NE02135

NE021 microwave oscillator

NE02107

TX38D85VC1CAA

2SC2570

SVI 3104 c

OCI 531

2SC1424

JF11

SAA 1006

Untitled

1734471

2SC1424

2SC1424

2sc2570 transistor

23STYLE