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    Untitled

    Abstract: No abstract text available
    Text: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e ran ge: tR A C tC A C tR C K M 44C1 000A S L- 7 7 0 ns 2 0 ns 1 3 0 ns K M 44C1 000A S L- 8 80ns 2 0 ns 1 5 0 ns K M 4 4 C 10OOASL-1 0


    OCR Scan     		PDF KM44C1000ASL KM44C1 000ASL- 000ASL-1 100ns cycles/256ms 70/80/100ns>

    Untitled

    Abstract: No abstract text available
    Text: KM44C1000ASL CMOS DRAM 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tR A C tC A C tR C KM 44C1000ASL- 7 70 ns 20 ns 130ns KM 44C 1 00 0A S L - 8 80ns 20 ns 150ns K M 4 4 C 10OOASL-10 100ns 25 n s 18 0 n s


    OCR Scan     		PDF KM44C1000ASL 44C1000ASL- 130ns 150ns 10OOASL-10 100ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tnAC tCAC tue KM 44C 1000ASL- 7 70ns 20ns 130ns KM 44C 1000ASL- 8 80ns 20ns 150ns KM 44C 10OOASL-10 100ns 25ns 180ns • • • •


    OCR Scan     		PDF KM44C1000ASL 1000ASL- 10OOASL-10 100ns 130ns 150ns 180ns 44C10 KM44C1000ASL

    transistor 45 f 122

    Abstract: BUK416-1000AE K416 K4161 BUK416-1000BE
    Text: P h ilip s C o m p o n e n ts Data sheet status Prelim inary specification date of issue March 1991 BU K416-10OOAE/BE PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancem ent mode field-effect pow er transistor in ISO TO P envelope.


    OCR Scan     		PDF BUK416-1000AE/BE BUK416 -1000AE -1000BE OT227B 0445M4 transistor 45 f 122 BUK416-1000AE K416 K4161 BUK416-1000BE

    74ALS1000

    Abstract: SN54ALS1000A
    Text: TYPES SN54ALS1000A. SN54AS1000, SN74ALS1000A, SN74AS1000 QUADRUPLE 2-INPUT POSITIVE NANO BUFFERS/DRIVERS 0 2 6 6 1 , A P R IL 1 9 8 2 - R E V I S E D D E C E M B E R 1 9 8 3 ' A L S 1 0 0 0 A is a B u ffe r V e r s io n o f SN 54ALS1O O O A, S N 5 4 A S 1 0 0 0 . . . J PA C K A G E


    OCR Scan     		PDF SN54ALS1000A. SN54AS1000, SN74ALS1000A, SN74AS1000 54ALS1O SN54AS1000 74ALS1000 SN54ALS1000A

    Untitled

    Abstract: No abstract text available
    Text: November 1990 Edition 2.0 DATA SHEET FUJITSU MB81CWOOA-70L/-80L/-10L CMOS 1,048,576 BIT FAST PAGE MODE DYNAMIC RAM CMOS 1M x 1 Bit Fast Page Mode DRAM The Fujitsu MB81C1000A is a CMOS, fully decoded dynamic RAM organized as 1,048,576 words x 1 bit. The MB81C1000A has been designed or mainframe


    OCR Scan     		PDF MB81CWOOA-70L/-80L/-10L MB81C1000A 26-lead MB81C1000A-70L MB81C1000A-80L MB81C1000A-10L

    Untitled

    Abstract: No abstract text available
    Text: KM44C1000ASL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • The Samsung K M 4 4 C 1 0 0 0 A S L is a high speed CMOS 1 ,0 4 8 ,5 7 6 bit X 4 Dynamic Random A ccess Memory. Its design is optimized for high perform ance applications


    OCR Scan     		PDF KM44C1000ASL 130ns 10OOASL-10 180ns 20-LEAD

    Untitled

    Abstract: No abstract text available
    Text: CMOS DRAM KM44C1000AL 1M X4 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • P e rfo rm a n c e range: tR A C tcAC KM44C1OOOAL- 7 70ns 2 0 ns KM 44C 1 OOOAL- 8 80ns I 2 0 ns 1 50 ns 25ns i 180ns K M 4 4 C 1 0 0 0 A L -1 0 10 0ns tRC


    OCR Scan     		PDF KM44C1000AL KM44C1OOOAL- 180ns 20-LEAD

    44c1000

    Abstract: No abstract text available
    Text: KM44C1000AL CMOS DRAM 1 M X 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Perform ance range: tRAC • • • • • • • tcAC tRC 130ns KM 44C1000AL- 7 70 n s 2 0 ns KM44C1OOOAL- 8 80ns 2 0 ns 1 50 ns K M 4 4 C 1 0 0 0 A L -1 0


    OCR Scan     		PDF KM44C1000AL 44C1000AL- KM44C1OOOAL- 130ns 20-LEAD 44c1000

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm * 2.2 ± 0.2DEPTH APPLICATION Clamp diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS


    OCR Scan     		PDF FD500JV-90DA

    SDM300

    Abstract: SDM30004 SDM30008 SDM30012 10000-r SDM-300
    Text: Silicon Power Rectifier SDM300 - A — •— F—' — i D im . o — *• * i> B H — 1I KÏI - I ! A B C F G H K L M G H — — I \ L In c h e s Min. Max. M il lim e t e r s Min. _ — ——. 1.240 31.49 2.650 1.260 .925 2.00 BSC 0.320 0.340


    OCR Scan     		PDF SDM300 SOM30002Â SDM30004Â SOM30006Â SDM30008Â SDM30012* SDM300 SDM30004 SDM30008 SDM30012 10000-r SDM-300

    transistor a2160

    Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
    Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124


    OCR Scan     		PDF N12861 N13801 MN1381 N13811 N13821 N150402 15P0802 N150412 MN15151 MN152121 transistor a2160 transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mini circuits 15542 A1270 Y AN 5606K

    Untitled

    Abstract: No abstract text available
    Text: N » 1 9 M 9Z MC-421000AA40, -421000AB40 1,048,576 X 40-Bit Dynamic CMOS RAM Module L i M li W NEC Electronics Inc. February 1992 Description Pin Configuration The MC-421000AA40 and MC-421000AB40 are fastpage dynamic RAM modules organized as 1,048,576 words by 40 bits and designed to operate from a single


    OCR Scan     		PDF MC-421000AA40, -421000AB40 40-Bit MC-421000AA40 MC-421000AB40 72-Pin

    Mitsubishi transistor

    Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
    Text: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B


    OCR Scan     		PDF QM1000HA-24B 1000H Mitsubishi transistor transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules

    150a gto

    Abstract: R60S2515ES 150a gto 2000v BP107 R60F2515ES GTO thyristors R60e gto 1600v 150A GTO 2000 V R60s diode
    Text: m ti4 E D • 7E T4b21 OOÜ5fl34 MTì M P R X R60S2515ES R60F2515ES Powerex, Inc., 200 Hlllis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Fast Recovery Diode


    OCR Scan     		PDF 00D5fl34 R60S2515ES R60F2515ES BP107, Amperes/2500 R60F2515ES 150a gto 150a gto 2000v BP107 GTO thyristors R60e gto 1600v 150A GTO 2000 V R60s diode

    Untitled

    Abstract: No abstract text available
    Text: 75T4b21 GGGbS02 0 2 3 H P R X TA20 1800A Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P h S S C C O fltfO l S C R Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 . an n . 1800 Amperes Average


    OCR Scan     		PDF 75T4b21 GGGbS02 BP107, DUCT10N P-176

    Untitled

    Abstract: No abstract text available
    Text: b4E D rn n m • TETUbSl DGG5T75 W E « P R X FG1000AH x POUEREX INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 1S697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Man», France(43) 7Z75.15 Asymmetric Gate-Turn-Off Thyristors


    OCR Scan     		PDF DGG5T75 FG1000AH 1S697 BP107, Amperes/2000

    SN54ALS1000A

    Abstract: D26G1 SN54AS1000A SN74ALS1000A SN74AS1000A
    Text: SN54A LS1000A, SN74ALS1OOOA, S N 54A S 1000A , S N 74A S 1000A QUADRUPLE 2 INPUT POSITIVE NAND BUFFERS/DRIVERS D 2 6 6 1 , A P R IL 1 9 8 4 - R E V IS E D M A Y 1 9 8 6 'A L S 1 0 0 0 A is a Buffer Version of 'ALSOOB S N 5 4 A L S 1 0 0 0 A , S N 5 4 A S 1 0 0 0 A . . . J PACKAG E


    OCR Scan     		PDF SN54ALS1000A, SN74ALS1OOOA, SN54AS1000A, SN74AS1000A D26G1, 1984-REVISED ALS1000A AS1000A 10OOA 300-mil SN54ALS1000A D26G1 SN54AS1000A SN74ALS1000A

    Untitled

    Abstract: No abstract text available
    Text: GEC P L E S S E Y 3 SEM ICONDUCTORS i DS4217-2.3 D S F 1 1 0 6 0 S G FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS 6000V RRM 400A Jf AV 4200A FSM 700(iC Qr 6.0|iS v Snubber Diode For G TO Circuits. FEATURES ■ Double Side Cooling. ■ High Surge Capability.


    OCR Scan     		PDF DS4217-2 DSF11060SG60 DSF11060SG58 DSF11060SG56 DSF11060SG55 00A/HS 10OOA/ns, 37bfl522 DD3D17fl DSF11060SG

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLE SS EY S E M IC O N D U C T O R S DS4091-2.2 DG408BP45 GATE TURN-OFF THYRISTOR APPLICATIONS KEY PARAMETERS 1000A TCM V 4500V DRM 320A *T AV dVp/dt 1000V/HS dLp/dt 300A/|iS • Variable speed A.C. motor drive inverters (VSD-AC). ■ Uninterruptable Power Supplies


    OCR Scan     		PDF DS4091-2 DG408BP45 000V/HS flS22 DD30000 37bflS22

    Untitled

    Abstract: No abstract text available
    Text: SiG E C P L E S S E Y SF Ml C O N D U C T O R S DS4146-4.3 DSF8025SE FAST RECOVERY DIODE APPLICATIONS • KEY PARAMETERS V RRM 2500V 650A Jf AV 7500A ' fsm 540|iC Induction Heating. ■ A.C. Motor Drives. ■ Q. Inverters And Choppers. ■ Welding. 5.0|XS


    OCR Scan     		PDF DS4146-4 DSF8025SE DSF8025SE25 DSF8025SE24 DSF8025SE23 DSF8025SE22 DSF8025SE21 DSF8025SE20 37bfl522 0D301S3

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS UC1526A UC2526A UC3526A U N IT R O D E Regulating Pulse Width Modulator DESCRIPTION FEATURES Reduced Supply Current Oscillator Frequency to 600kHz Precision Band-Gap Reference 7 to 35V Operation Dual 200mA Source/Sink Outputs M inim um O utput C ross-C onduction


    OCR Scan     		PDF UC1526A UC2526A UC3526A 600kHz 200mA UC3526A 100mV

    diode B4E

    Abstract: BP107 Q005 R72F4520BS R72S4520BS high power free wheeling diode powerex diode
    Text: F W M lW 72C14b51 ooüsôm2 sb5 mpnx R72S4520BS _ R72F4520BS_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 F d S t R & C O V G T V D ÎO C lO Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 Jq j T h y N s tO tS


    OCR Scan     		PDF R72S4520BS R72F4520BS_ BP107, Amperes/4500 R72F4520BS diode B4E BP107 Q005 high power free wheeling diode powerex diode

    N42C

    Abstract: N41C MN41256a N41257A-08 N4146 4141-00 41410 TSOP044-P0400A N4141
    Text: MOS Memories • Dynamic RAMs Memory Size Type No. bit Memory A ccess C ycle Refresh Supply C om position Tim e Tim e C ycle Voltage (W ord X bit) max. (ns) min. (ns) (cycle/m s) (V) O perating S tand-by 262,144 X 1 80 160 256/4ms 4.5 ~ 5.5 440 16.5 DIPOI 6-P-0300A


    OCR Scan     		PDF N41256A 1256A N41257A-08 256/4ms 6-P-0300A QFJ018-P-R290 ZIP016-P-0300 DIP016-P-0300A N42C N41C MN41256a N4146 4141-00 41410 TSOP044-P0400A N4141