transistor GT 1081
Abstract: MRFG35010AR5
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
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MRFG35010A
MRFG35010AR1
MRFG35010AR5
MRFG35010A
transistor GT 1081
MRFG35010AR5
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100A101JW150XT
Abstract: transistor GT 1081 transistor 0882 N 341 AB ZO 607 MA MRFG35010AR1 A114 A115 AN1955 C101
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
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Original
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MRFG35010A
MRFG35010AR1
100A101JW150XT
transistor GT 1081
transistor 0882
N 341 AB
ZO 607 MA
MRFG35010AR1
A114
A115
AN1955
C101
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 2, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
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Original
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MRFG35010A
MRFG35010AR1
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PDF
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100A100JW150XT
Abstract: transistor GT 1081 100A101JW150XT 100B102JW500XT 200B104KW50XT AN1955 MRFG35010AR1 gt 1438 transistor D 1108
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 1, 6/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35010AR1 Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for
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Original
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MRFG35010A
MRFG35010AR1
100A100JW150XT
transistor GT 1081
100A101JW150XT
100B102JW500XT
200B104KW50XT
AN1955
MRFG35010AR1
gt 1438 transistor
D 1108
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PDF
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