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Kyocera AVX Components 100B100JP500XT CAP CER 10PF 500V P90 1111
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	100B100JP500XT	Reel			500	1 - 10 - 100 - 1000 $4.3054 10000 $4.3054	Buy Now
Avnet Americas	100B100JP500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B100JP500XT					1 - 10 - 100 - 1000 $3.98 10000 $3.98	Get Quote
Richardson RFPD	100B100JP500XT				500	1 - 10 - 100 - 1000 $3.11 10000 $2.75	Buy Now
Kyocera AVX Components 100B100JP500XC100 MLC A/B/R - Waffle Pack (Alt: 100B100JP500XC100)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B100JP500XC100	Waffle Pack		16 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B100JP500XC100		125			1 $6.22 10 $5.39 100 $4.14 1000 $3.52 10000 $3.45	Buy Now
Richardson RFPD	100B100JP500XC100				100	1 - 10 - 100 $3.35 1000 $3.04 10000 $2.69	Buy Now
Kyocera AVX Components 100B100JP500XTV MLC A/B/R - Custom Tape W/Leader (Alt: 100B100JP500XTV)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B100JP500XTV	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B100JP500XTV					1 - 10 - 100 - 1000 $3.53 10000 $3.53	Get Quote
Kyocera AVX Components 100B100JPN500XT MLC A/B/R - Custom Tape W/Leader (Alt: 100B100JPN500XT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	100B100JPN500XT	Tape w/Leader		16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	100B100JPN500XT					1 - 10 - 100 - 1000 $3.68 10000 $3.68	Get Quote
Kyocera AVX Components 100B100JP1500XC100 Silicon RF Capacitors / Thin Film 500V 10pF Tol 5% Las Mkg
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	100B100JP1500XC100					1 $6.22 10 $5.39 100 $4.14 1000 $3.52 10000 $3.45	Get Quote
Richardson RFPD	100B100JP1500XC100				100	1 - 10 - 100 $3.45 1000 $3.11 10000 $2.75	Buy Now

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100B100JP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
100B100JP500XT		American Technical Ceramics	Capacitors - Ceramic Capacitors - CAP CER 10PF 500V P90 1111		Original	PDF

100B100JP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MRF9030MBR1 Abstract: MRF9030MR1 100B7R5JP Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 100B7R5JP
RF-35-0300 Abstract: A04T-5 93F2975 A113 MRF9060MBR1 MRF9060MR1 100B470JP 100B100JP 44F3360 Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1 RF-35-0300 A04T-5 93F2975 A113 MRF9060MBR1 100B470JP 100B100JP 44F3360
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors	Original	PDF	MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1
MRF6S19120H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF6S19120H Rev. 0, 2/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for N - CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L	Original	PDF	MRF6S19120H MRF6S19120HR3 MRF6S19120HSR3
RF-35-0300 Abstract: MRF9060 MRF9060LSR1 MRF9060R1 MRF9060S MRF9060L Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060/D MRF9060R1 MRF9060LSR1 MRF9060R1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S MRF9060L
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1 DEVICEMRF9060M/D
93F2975 Abstract: Motorola 305 Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060/D MRF9060 MRF9060S MRF9060SR1 93F2975 Motorola 305
MRF9060 Abstract: MRF9060LR1 MRF9060LSR1 MRF9060S 9600MHz Text: Freescale Semiconductor Technical Data Document Number: MRF9060 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060LR1 MRF9060 MRF9060LSR1 MRF9060S 9600MHz
UHF TRANSISTOR Abstract: J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet Text: The innovative Semiconductor Company! HVV0405-175 HIGH VOLTAGE, HIGH RUGGEDNESS UHF Pulsed Power Transistor 420-470 MHz, 300µs Pulse, 10% Duty Cycle For UHF band, Weather and Long Range Radar Applications TM FEATURES • Silicon MOSFET Technology • Operation from 24V to 50V	Original	PDF	HVV0405-175 429-HVVi EG-01-DS10B 05/XX/09 UHF TRANSISTOR J152-ND J151-ND RF MOSFET CLASS AB Coaxicom transistor SMD g 28 100B100JP500X RC1206JR-07100KL smd transistor 259 4404 mosfet
MRF9060 Abstract: MRF9060R1 MRF9060S MRF9060SR1 MRF9060 equivalent Text: MOTOROLA Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060/D MRF9060R1 MRF9060SR1 MRF9060R1 MRF9060 MRF9060S MRF9060SR1 MRF9060 equivalent
A113 Abstract: MRF9060NBR1 MRF9060NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF9060N Rev. 10, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9060NR1 MRF9060NBR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9060N MRF9060NR1 MRF9060NBR1 MRF9060NR1 A113 MRF9060NBR1
MRF9030MBR1 Abstract: MRF9030MR1 Text: MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 DEVICEMRF9030M/D MRF9030MBR1
44F3360 Abstract: 93F2975 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors MRF9030MR1 MRF9030MBR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9030MBR1) MRF9030MR1 MRF9030MBR1 44F3360 93F2975
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9060 MRF9060LR1 MRF9060LSR1

RF-35-0300 Abstract: MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060S marking wb1 MRF9060L Text: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9060 MRF9060LR1 MRF9060LSR1 MRF9060LR1 RF-35-0300 MRF9060 MRF9060LSR1 MRF9060S marking wb1 MRF9060L
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data MRF9060M Rev. 8, 3/2005 RF Power Field Effect Transistors MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1 N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9060M MRF9060NR1 MRF9060NBR1 MRF9060MR1 MRF9060MBR1
100B0R5BP Abstract: MRF9060L Text: Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9060LR1 MRF9060LSR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9060 MRF9060LR1 MRF9060LSR1 100B0R5BP MRF9060L
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF9060MBR1 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies	Original	PDF	MRF9060M/D MRF9060MBR1 DEVICEMRF9060M/D
A113 Abstract: MRF9060MBR1 MRF9060MR1 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Freescale Semiconductor, Inc. Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060M/D MRF9060MR1 MRF9060MBR1 MRF9060MR1 A113 MRF9060MBR1
motorola MOSFET 935 Abstract: MRF9060LR1 MRF9060LSR1 MRF9060S MRF9060 MRF9060L Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices	Original	PDF	MRF9060/D MRF9060LR1 MRF9060LSR1 MRF9060LR1 motorola MOSFET 935 MRF9060LSR1 MRF9060S MRF9060 MRF9060L
MRF9030NR1 Abstract: marking z17 100B470JP Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors MRF9030NR1 MRF9030MR1 MRF9030MBR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these	Original	PDF	MRF9030MBR1) MRF9030NR1 MRF9030MR1 MRF9030MBR1 marking z17 100B470JP
pd 223 Abstract: MARKING WB1 A113 MRF9060M MRF9060MBR1 MRF9060MR1 Text: Freescale Semiconductor Technical Data Document Number: MRF9060M Rev. 9, 5/2006 Replaced by MRF9060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	PDF	MRF9060M MRF9060NR1/NBR1. MRF9060MR1 MRF9060MBR1 pd 223 MARKING WB1 A113 MRF9060M MRF9060MBR1
VIPer 32 Abstract: MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 MRF9030MR1 marking z17 Text: Freescale Semiconductor Technical Data Replaced by MRF9030NR1/NBR1. There are no form, fit or function changes with this part MRF9030M Rev. 9, 5/2006 replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors	Original	PDF	MRF9030NR1/NBR1. MRF9030M MRF9030MR1 MRF9030MBR1 MRF9030MR1 VIPer 32 MARKING WB1 viper gate control circuits MRF9030M VIPER 300 series A113 MRF9030MBR1 marking z17
MRF9030MBR1 Abstract: MRF9030MR1 TO-270-2 Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron MOSFET Line MRF9030MR1 MRF9030MBR1 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Freescale Semiconductor, Inc.	Original	PDF	MRF9030M/D MRF9030MR1 MRF9030MBR1 MRF9030MR1 MRF9030MBR1 TO-270-2

100B100JP Search Results

100B100JP Price and Stock

Kyocera AVX Components 100B100JP500XT

Kyocera AVX Components 100B100JP500XC100

Kyocera AVX Components 100B100JP500XTV

Kyocera AVX Components 100B100JPN500XT

Kyocera AVX Components 100B100JP1500XC100

100B100JP Datasheets (1)

100B100JP Datasheets Context Search

MRF9030MBR1

RF-35-0300

Untitled

MRF6S19120H

RF-35-0300

Untitled

93F2975

MRF9060

UHF TRANSISTOR

MRF9060

A113

MRF9030MBR1

44F3360

Untitled

RF-35-0300

Untitled

100B0R5BP

Untitled

A113

motorola MOSFET 935

MRF9030NR1

pd 223

VIPer 32

MRF9030MBR1