1.57 GHZ TRANSISTOR Search Results

1.57 GHZ TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

1.57 GHZ TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CGH40035FE Abstract: STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035 CGH40035F str 765 RT Text: PRELIMINARY CGH40035 35 W, RF Power GaN HEMT Cree’s CGH40035 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT). The CGH40035, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and	Original	CGH40035 CGH40035 CGH40035, CGH4003 CGH40035FE STR 17006 str g 5551 cree 3535 10UF 470PF CGH4003 CGH40035F str 765 RT	PDF
smd transistor 581 Abstract: 2222 581 16641 27291 BLF1822-10 C19 transistor MGW655 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2001 Aug 16 2002 Mar 12 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 PINNING - SOT467C FEATURES • Designed for broadband operation HF to 2.2 GHz	Original	M3D381 BLF1822-10 OT467C SCA74 613524/03/pp16 smd transistor 581 2222 581 16641 27291 BLF1822-10 C19 transistor MGW655	PDF
Untitled Abstract: No abstract text available Text: STC918E Semiconductor NPN Silicon Transistor Features • High current transition frequency fT=9.0 GHz Typ. @VCE=6V, IC=15mA • Low Noise Figure NFmin=1.4dB(Typ.) @1.0 GHz, VCE=8V, IC=3mA • Maximum Stable Gain(MSG)=19dB @1.0 GHz, VCE=6V, IC=10mA • Output third order intercept output(IP3)=29dBm @ 1.0 GHz,VCE=6V, IC=10mA	Original	STC918E 29dBm OT-523 KST-4005-000	PDF
smd transistor 581 Abstract: 2222-581 BLF1822-10 TEKELEC 302 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V	Original	M3D381 BLF1822-10 OT467C SCA75 613524/04/pp16 smd transistor 581 2222-581 BLF1822-10 TEKELEC 302	PDF
371 ph Abstract: motorola 2198 MRF949 RF NPN POWER TRANSISTOR C 10-12 GHZ 1 307 329 082 552 transistor motorola microlab fc 730 transistor motorola 351 MRF949T1 FXR SF-31N Text: MOTOROLA Order this document by MRF949T1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low	Original	MRF949T1/D MRF949T1 MRF949 371 ph motorola 2198 RF NPN POWER TRANSISTOR C 10-12 GHZ 1 307 329 082 552 transistor motorola microlab fc 730 transistor motorola 351 MRF949T1 FXR SF-31N	PDF
Philips Capacitor Abstract: smd code HF transistor Philips Capacitor datasheet CRS15 smd transistor marking C14 transistor SMD MARKING CODE HF transistor smd marking code c3 Transistor SMD marking code NV c5 marking TRANSISTOR SMD nf c1 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Product specification Supersedes data of 2002 Mar 12 2003 Feb 10 Philips Semiconductors Product specification UHF power LDMOS transistor BLF1822-10 FEATURES PINNING - SOT467C • Typical 2-tone performance at a supply voltage of 26 V	Original	M3D381 BLF1822-10 BLF1822-10 OT467C 15-Aug-02) Philips Capacitor smd code HF transistor Philips Capacitor datasheet CRS15 smd transistor marking C14 transistor SMD MARKING CODE HF transistor smd marking code c3 Transistor SMD marking code NV c5 marking TRANSISTOR SMD nf c1	PDF
Untitled Abstract: No abstract text available Text: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz	Original	MRF949T1/D MRF949T1 MRF949 MRF949T1/D	PDF
microlab fc 730 Abstract: ic 1 ne 555 RF NPN POWER TRANSISTOR C 10-12 GHZ 02059 BF 245 A spice IC NE 555 datasheet part marking leb RF NPN POWER TRANSISTOR 2.5 GHZ MRF949 MRF949T1 Text: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well	Original	MRF949T1/D MRF949 25SEP01 90/SC 26MAR02 microlab fc 730 ic 1 ne 555 RF NPN POWER TRANSISTOR C 10-12 GHZ 02059 BF 245 A spice IC NE 555 datasheet part marking leb RF NPN POWER TRANSISTOR 2.5 GHZ MRF949T1	PDF
transistor motorola 351 Abstract: MRF949T1 MRF949 sc 2878 Text: Order this document by MRF949T1/D NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz	Original	MRF949T1/D MRF949 25SEP01 90/SC 26MAR02 transistor motorola 351 MRF949T1 sc 2878	PDF
MRF949 Abstract: MRF949T1 Text: Order this document by MRF949T1/D MRF949T1 NPN Silicon Low Noise Transistors LOW NOISE TRANSISTORS Motorola’s MRF949 is a high performance NPN transistor designed for use in high gain, low noise small–signal amplifiers. The MRF949 is well suited for low voltage wireless applications. This device features a 9.0 GHz	Original	MRF949T1/D MRF949T1 MRF949 MRF949T1	PDF
2222-581 Abstract: transistor BR 471 A 821 ceramic capacitor smd capacitor philips 0805 smd capacitor philips 2222 capacitor philips EL series SMD transistor philips capacitor capacitor ceramic variable RF iec C19 Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1822-10 UHF power LDMOS transistor Preliminary specification 2001 Aug 16 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1822-10 PINNING - SOT467C FEATURES • High power gain PIN	Original	M3D381 BLF1822-10 OT467C 603516/02/pp15 2222-581 transistor BR 471 A 821 ceramic capacitor smd capacitor philips 0805 smd capacitor philips 2222 capacitor philips EL series SMD transistor philips capacitor capacitor ceramic variable RF iec C19	PDF
GHZ micro-X Package Abstract: micro-x transistor BRF60202 BRF60202J BRF60214 BRF60235 BRF60284 BRF60285 BRF60286 BRF60292 Text: BIPOLARICS, INC. Part Number BRF602 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C =2mA t • DESCRIPTION AND APPLICATIONS: Bipolarics' BRF602 is a high performance silicon bipolar	Original	BRF602 BRF602 BRF602an OT-23, OT-143, BRF60202 OT-23 BRF60214 BRF60292 OT-143 GHZ micro-X Package micro-x transistor BRF60202 BRF60202J BRF60214 BRF60235 BRF60284 BRF60285 BRF60286 BRF60292	PDF
17dBtyp Abstract: GHZ micro-X Package BRF63002 BRF63002J BRF63004 BRF63014 BRF63035 BRF63086 macro-X ceramic BRF63092 Text: BIPOLARICS, INC. Part Number BRF630 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Gain Bandwidth Product f = 12 GHz typ @ I C = 30mA t • Low Noise Figure 1.4 dB typ at 1.0 GHz 1.7 dB typ at 2.0 GHz	Original	BRF630 BRF630 BRF63002 OT-23 BRF63014 BRF63092 OT-143 BRF63035 17dBtyp GHZ micro-X Package BRF63002 BRF63002J BRF63004 BRF63014 BRF63035 BRF63086 macro-X ceramic BRF63092	PDF
macro-X ceramic Abstract: BRF604 BRF60402 BRF60402J BRF60404 BRF60414 BRF60435 BRF60485 BRF60486 BRF60487 Text: BIPOLARICS, INC. Part Number BRF604 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Gain Bandwidth Product f = 12 GHz typ @ I C = 4mA t • Low Noise Figure 1.4 dB typ at 1.0 GHz 1.7 dB typ at 2.0 GHz	Original	BRF604 BRF604 BRF60402 OT-23 BRF60414 BRF60492 OT-143 BRF60435 macro-X ceramic BRF60402 BRF60402J BRF60404 BRF60414 BRF60435 BRF60485 BRF60486 BRF60487	PDF

Silicon Bipolar Transistor 35 MICRO-X Abstract: B30V1160 B30V140 Silicon Bipolar Transistor MICRO-X Text: BIPOLARICS, INC. Part Number B30V140 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: DESCRIPTION AND APPLICATIONS: • High Output Power 27.0 dBm, P1dB @ 1.0 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 100 mA t Bipolarics' B30V140 is a high performance, low cost silicon bipolar	Original	B30V140 B30V140 B30V180 B30V1160 Silicon Bipolar Transistor 35 MICRO-X Silicon Bipolar Transistor MICRO-X	PDF
Untitled Abstract: No abstract text available Text: PH1214-40M Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	PH1214-40M	PDF
40w electronic ballast Abstract: Electronic ballast 40W PH1214-40M Text: PH1214-40M Radar Pulsed Power Transistor 40W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty M/A-COM Products Released, 30 May 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation	Original	PH1214-40M 40w electronic ballast Electronic ballast 40W PH1214-40M	PDF
HPAC-70GT Abstract: TRANSISTOR 117a HXTR-6106 S21E Text: COMPONENTS Features ' HXTR-6106 1.98 0 . 078 1.57 (0 . 0 62 ) GUARANTEED LOW NOISE FIGURE 2.7 dB at 2 GHz Max., 2.5 dB Typical 3.8 dB at 4 GHz Typical HIGH ASSOCIATED GAIN 11.5 dB Typical at 2 GHz WIDE DYNAMIC RANGE RUGGED HERMETIC PACKAGE Co-fired Metal/Ceramic Construction	OCR Scan	HXTR-6106 HXTR-6106 HPAC-70GT TRANSISTOR 117a S21E	PDF
4H74 Abstract: NE68337 S21E Text: N E C / C A L IF O R N IA 1SE NEC D • b457414 000145b NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES T -ÌH 5 1 NE68337 OUTLINE DIMENSIONS Units in mm • LOW OPERATING VOLTAGE OUTLINE 37 • LOW POWER CO NSUM PTION • HIG H INPUT IMPEDANCE DESCRIPTION AND APPLICATIONS	OCR Scan	b427414 NE68337 NE68337 4H74 S21E	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola's M R F 9 4 9 is a high perform ance N P N transistor designed for use in high gain, low noise sm all-signal amplifiers. T h e M R F 9 4 9 is well suited for low	OCR Scan	MRF949T1 598E-16 548E-14 395E-16 00E-05 70E-13 60E-13 00E-11 00E-O9 MRF949	PDF
2SC3584 Abstract: ne3813 SC358 NE68133 10r 236 NE68100 NE AND "micro-X" el3025 2SC3582 2SC3583 Text: N E C / CALIFORNIA 1SE NEC J> b427414 OOG144S 7 NPN SILICON HIGH FREQUENCY TRANSISTOR T-3I-& T -3 I-I7 NE68100 NE68132 NE68133 NE68135 NE68137 FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 8 GHz The NE681 series of NPN silicon transistors are designed for	OCR Scan	OOG144S NE68100 NE68132 NE68133 NE68135 NE68137 NE68100, NE68135. NE681 2SC3584 ne3813 SC358 10r 236 NE AND "micro-X" el3025 2SC3582 2SC3583	PDF
NE41607 Abstract: NC921 Z171 NE41600 ne41635 2SC2025 50m1n NE416 NE41615 Z128 Text: NEC/ CALIFORNIA SbE ]> NEC • b4E7Mm OOOSBTG 27ê BINECC NPN MEDIUM POWER UHF-VHF TRANSISTOR NE416 SERIES FEATURES DESCRIPTION AND APPLICATIONS • L O W N O IS E FIG U R E : 1 d B at 70 M H z The N E416 series of N P N transistors is one of the most versatile and widely used of N E C 's microwave transistors. T h e	OCR Scan	b427mM NE416 NE41635 DE161 NE41607 NC921 Z171 NE41600 2SC2025 50m1n NE41615 Z128	PDF
NEC 41-A 002 Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E Text: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for	OCR Scan	b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353	PDF
2SC1593 Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189 Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is	OCR Scan	b427414 NE64300 NE64310 NE64320 NE643 NE64300) NE64310) NE64320) 2SC1593 2SC1041 GE-64 NEC k 2134 transistor NE64320 V020 transistor BU 189	PDF

1.57 GHZ TRANSISTOR Search Results

1.57 GHZ TRANSISTOR Result Highlights (5)

1.57 GHZ TRANSISTOR Datasheets Context Search

CGH40035FE

smd transistor 581

Untitled

smd transistor 581

371 ph

Philips Capacitor

Untitled

microlab fc 730

transistor motorola 351

MRF949

2222-581

GHZ micro-X Package

17dBtyp

macro-X ceramic

Silicon Bipolar Transistor 35 MICRO-X

Untitled

40w electronic ballast

HPAC-70GT

4H74

Untitled

2SC3584

NE41607

NEC 41-A 002

2SC1593