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    Text: □IX YS Fast Recovery Epitaxial Diode FRED V RSM V V’ FIRM DSEI 2x61 V 200 200 1 W.— H' *I n ° 1 - W — *-» Test Conditions ^FRMS ' favm *FRU TVJ —"lyjM Tc = 85°C; rectangular, d = 0.5 tp < 10 jis; rep. rating, pulse width limited by T VJM


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