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    IN2804

    Abstract: No abstract text available
    Text: HYM539400 M-Series •HYUNDAI 4M X 39-bit CMOS DRAM MODULE DESCRIPTION The HYM539400 is a 4M x 39-bit Fast page mode CMOS DRAM module consisting of ten HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0. 22,1/ F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM539400 39-bit HY5116400 HYM539400MG/ 1CE10-10-MAY94 DQD3S35 IN2804

    panasonic CR1632

    Abstract: bq4285E CR1632 battery CR1632 bq4287E
    Text: bq4287E f e j BENCHMARQ Enhanced RTC Module With NVRAM Control Features >- D irect clock/calendar replacem ent for IBM ^ AT-compatible com puters and other applications >- 114 bytes of general nonvolatile storage ► E nhanced features include: - System w ake-up capability—


    OCR Scan     		PDF bq4287E 32kHz 24-pin CR1632 15Kohm 137001e) 0DD3531 panasonic CR1632 bq4285E battery CR1632