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    n25d

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM 3 = -42 dBc at Po = 3 1 .5 dBm, - Single carrier level • High power - P1dB = 42.0 dBm at 6.4 GHz to 7.2 GHz


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    PDF TIM6472-14L 0D2252D n25d