Untitled
Abstract: No abstract text available
Text: W hat HEWLETT« mLMÆ PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42070 Features • High Output Power: 21.0 dBm Typical Pj dB at 2.0 GHz 20.5 dBm Typical Pi ¿b at 4.0 GHz • High Gain at 1 dB Compression: 15.0 dB Typical Gi ^ at 2.0 GHz
|
OCR Scan
|
PDF
|
AT-42070
AT-42070
Rft/50
0D17bb3
DG17bb4
|
Untitled
Abstract: No abstract text available
Text: r r LT1130A/LT1140A Series i r r n TECHNOLOGY Æ Lm J Advanced Low Power 5V RS232 Drivers/Receivers with Small Capacitors FCflTURCS D € S C R IP T IO n • ESD Protection over ±10kV ±15kV IEC-1000-4-2 for LT1133A, LT1137A and LT1141A ■ Uses Small Capacitors: 0.1pF, 0.2|aF
|
OCR Scan
|
PDF
|
LT1130A/LT1140A
RS232
IEC-1000-4-2
LT1133A,
LT1137A
LT1141A)
120kbaud
2500pF
250kbaud
10OOpF
|
Untitled
Abstract: No abstract text available
Text: 16K X 32 CMOS DUAL-PORT STATIC RAM MODULE |d t / IDT7M1002 Integrated Device Technology, Inc. FEATURES DESCRIPTION • High-density 512K CMOS Dual-Port RAM module • Fast access times The IDT7M 1002 is a 16K x 32 high-speed CM OS Dual-Port Static RAM Module constructed on a co-fired ceramic sub
|
OCR Scan
|
PDF
|
IDT7M1002
IDT7006)
IDT7M1002
64-bit
IDT7006
2S771
QQ17bbS
|