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Infineon Technologies AG SPA06N80C3XKSA1 MOSFET N-CH 800V 6A TO220-FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA06N80C3XKSA1	Tube	11,995		1	1 $2.36 10 $2.36 100 $2.36 1000 $0.89488 10000 $0.89488	Buy Now
Mouser Electronics	SPA06N80C3XKSA1		230			1 $1.95 10 $1.1 100 $0.996 1000 $0.894 10000 $0.894	Buy Now
Newark	SPA06N80C3XKSA1	Bulk	165		1	1 $1.56 10 $1.3 100 $1.03 1000 $0.93 10000 $0.93	Buy Now
Chip1Stop	SPA06N80C3XKSA1	Tube	1,244			1 $1.04 10 $0.89 100 $0.869 1000 $0.863 10000 $0.863	Buy Now
Component Electronics, Inc	SPA06N80C3XKSA1		1,461			1 $9.23 10 $9.23 100 $6.92 1000 $6 10000 $6	Buy Now

EBV Elektronik	SPA06N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SPA06N80C3XKSA1		9,100			1 - 10 - 100 $1.0949 1000 $0.8896 10000 $0.8896	Buy Now
Infineon Technologies AG SPP06N80C3XKSA1 MOSFET N-CH 800V 6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP06N80C3XKSA1	Tube	5,690		1	1 $2.81 10 $2.81 100 $2.81 1000 $0.93443 10000 $0.87175	Buy Now
Mouser Electronics	SPP06N80C3XKSA1		1,161			1 $2.24 10 $1.28 100 $1.18 1000 $0.871 10000 $0.871	Buy Now
Newark	SPP06N80C3XKSA1	Bulk			1	1 $2.09 10 $1.73 100 $1.53 1000 $1.12 10000 $1.1	Buy Now
Rochester Electronics	SPP06N80C3XKSA1		20,858		1	1 $0.9686 10 $0.9686 100 $0.9105 1000 $0.8233 10000 $0.8233	Buy Now
Chip-Germany GmbH	SPP06N80C3XKSA1		51			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Chip1Stop	SPP06N80C3XKSA1	Tube	479			1 $1.68 10 $1.36 100 $1.01 1000 $1.01 10000 $1.01	Buy Now
EBV Elektronik	SPP06N80C3XKSA1		87,000	16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SPP06N80C3XKSA1		69,500		1	1 - 10 - 100 - 1000 $1.3 10000 $1.3	Buy Now
Infineon Technologies AG SPD06N80C3ATMA1 MOSFET N-CH 800V 6A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPD06N80C3ATMA1	Digi-Reel	3,969		1	1 $2.67 10 $1.722 100 $2.67 1000 $0.87984 10000 $0.87984	Buy Now
	SPD06N80C3ATMA1	Cut Tape	3,969		1	1 $2.67 10 $1.722 100 $2.67 1000 $0.87984 10000 $0.87984	Buy Now
	SPD06N80C3ATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.81225	Buy Now
Avnet Americas	SPD06N80C3ATMA1	Reel	2,500	15 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.78645	Buy Now
Mouser Electronics	SPD06N80C3ATMA1		29,407			1 $1.84 10 $1.17 100 $0.938 1000 $0.829 10000 $0.796	Buy Now
Newark	SPD06N80C3ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.844	Buy Now
	SPD06N80C3ATMA1	Cut Tape			5	1 $1.8 10 $1.26 100 $1.11 1000 $0.901 10000 $0.901	Buy Now
	SPD06N80C3ATMA1	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.844	Buy Now
Rochester Electronics	SPD06N80C3ATMA1		255		1	1 $0.9025 10 $0.9025 100 $0.8483 1000 $0.7671 10000 $0.7671	Buy Now

Ameya Holding Limited	SPD06N80C3ATMA1		10,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	SPD06N80C3ATMA1	Cut Tape	1,798			1 $1.15 10 $0.888 100 $0.848 1000 $0.845 10000 $0.845	Buy Now
EBV Elektronik	SPD06N80C3ATMA1		2,500	16 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SPD06N80C3ATMA1		2,500		1	1 - 10 - 100 - 1000 - 10000 $1.25	Buy Now
Win Source Electronics	SPD06N80C3ATMA1		27,996			1 - 10 - 100 $1.0688 1000 $0.8684 10000 $0.8684	Buy Now
Infineon Technologies AG SPP06N80C3XK MOSFET N-CH 800V 6A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP06N80C3XK	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	SPP06N80C3XK	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $0.82481 10000 $0.80494	Buy Now
Infineon Technologies AG SPD06N80C3BTMA1 MOSFET N-CH 800V 6A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPD06N80C3BTMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SPD06N80C3BTMA1	Digi-Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SPD06N80C3BTMA1	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ameya Holding Limited	SPD06N80C3BTMA1		3,023			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	SPD06N80C3BTMA1		842			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPD06N80C3BTMA1		27,996			1 - 10 - 100 $1.0422 1000 $0.6948 10000 $0.6948	Buy Now

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06N80C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
06n80 Abstract: 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPP06N80C3 PG-TO220-3 06N80C3 06n80 06N80C3 JESD22 PG-TO220-3 SPP06N80C3 06N80C
06N80C3 Abstract: 06N80 Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06N80
diode 71A Abstract: SPA06N80C3 Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.9 Ω • Extreme dv/dt rated	Original	PDF	SPA06N80C3 P-TO220-3-31 06N80C3 P-TO220-3-31 Q67040-S4435 diode 71A SPA06N80C3
06n80c3 Abstract: SPA06N80C3 Text: 06N80C3 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP06N80C3 SPA06N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4351 06n80c3 SPA06N80C3
SMD Transistor g15 Abstract: transistor A25 SMD transistor SMD g15 Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD transistor SMD g15
06n80c3 Abstract: JESD22 PG-TO220-3 SPA06N80C3 Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPA06N80C3 PG-TO220-3 06N80C3 06n80c3 JESD22 PG-TO220-3 SPA06N80C3
Untitled Abstract: No abstract text available Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPP06N80C3 PG-TO220-3 06N80C3
06n80c3 Abstract: SPA06N80C3 06N80 TO220 HEATSINK DATASHEET PG-TO220-3-31 Q67040-S4351 SPP06N80C3 Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP06N80C3 SPA06N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4351 06N80C3 06n80c3 SPA06N80C3 06N80 TO220 HEATSINK DATASHEET Q67040-S4351 SPP06N80C3
06n80c3 Abstract: PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	PDF	SPD06N80C3 PG-TO252 Q67040-S4352 06N80C3 PG-TO252-3-1, PG-TO252-3-11, 06n80c3 PG-TO252-3-11 TRANSISTOR SMD MARKING CODE 2A SPD06N80C3 Q67040-S4352 TRANSISTOR SMD MARKING CODE WS
06n80c3 Abstract: P-TO252 SPD06N80C3 Text: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A P-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated	Original	PDF	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80c3 P-TO252 SPD06N80C3
06n80 Abstract: Q67040-S4352 06n8 06n80c3 Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω •=Periodic avalanche rated	Original	PDF	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 06n80 Q67040-S4352 06n8 06n80c3
06n80c3 Abstract: SPP06N80C3 06n80 Text: 06N80C3 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.9 Ω ID 6 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP06N80C3 SPA06N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA06N80C3 06N80C3 06N80C3 06n80
Untitled Abstract: No abstract text available Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	PDF	SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3
Untitled Abstract: No abstract text available Text: 06N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO252 VDS 800 V RDS(on) 0.9 Ω ID 6 A PG-TO252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated Type	Original	PDF	SPD06N80C3 PG-TO252 SPD06N80C3 Q67040-S4352 06N80C3

SMD Transistor g15 Abstract: transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3 Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPD06N80C3 PG-TO252-3 06N80C3 SMD Transistor g15 transistor A25 SMD smd diode S6 06n80c3 JESD22 SPD06N80C3
06N80 Abstract: No abstract text available Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPA06N80C3 PG-TO220-3 06N80C3 06N80
TO-252 Abstract: No abstract text available Text: 06N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 0.9 Ω • Periodic avalanche rated ID 6 A • Extreme dv/dt rated	Original	PDF	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 TO-252
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	PDF	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
Untitled Abstract: No abstract text available Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPD06N80C3 PG-TO252-3 06N80C3
06N80C3 Abstract: No abstract text available Text: 06N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.9 Ω Q g,typ 31 nC • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPA06N80C3 PG-TO220-3 06N80C3 06N80C3
smd transistor marking 12W Abstract: smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98 Text: Preliminary data 06N80C2 Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO252 · Product Summary VDS 800 V Ultra low gate charge RDS(on) 900 mW · Periodic avalanche rated	Original	PDF	SPD06N80C2 P-TO252 Q67040-S4352 06N80C2 smd transistor marking 12W smd transistor code 12w 06N80C2 TRANSISTOR SMD MARKING CODE 12w smd transistor 12W 98 P-TO252 SPD06N80C2 SMD TRANSISTOR MARKING 2c transistor SMD 12W smd 12w 98
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	PDF	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
SPD06N80C3 Abstract: 06N80C3 P-TO252 Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO252 • Ultra low gate charge VDS 800 V RDS(on) 900 mΩ ID •=Periodic avalanche rated	Original	PDF	SPD06N80C3 P-TO252 Q67040-S4352 06N80C3 SPD06N80C3 06N80C3 P-TO252
06N80C3 Abstract: Q67040-S4351 SPP06N80C3 Text: 06N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature Product Summary •=New revolutionary high voltage technology • Ultra low gate charge •=Periodic avalanche rated VDS 800 V RDS on 900 mΩ ID • Extreme dv/dt rated	Original	PDF	SPP06N80C3 P-TO220-3-1 Q67040-S4351 06N80C3 06N80C3 Q67040-S4351 SPP06N80C3

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06N80C Price and Stock

Infineon Technologies AG SPA06N80C3XKSA1

Infineon Technologies AG SPP06N80C3XKSA1

Infineon Technologies AG SPD06N80C3ATMA1

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Infineon Technologies AG SPD06N80C3BTMA1

06N80C Datasheets Context Search

06n80

06N80C3

diode 71A

06n80c3

SMD Transistor g15

06n80c3

Untitled

06n80c3

06n80c3

06n80c3

06n80

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Untitled

Untitled

SMD Transistor g15

06N80

TO-252

PEF 24628

Untitled

06N80C3

smd transistor marking 12W

BCM 4336

SPD06N80C3

06N80C3