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    Kyocera AVX Components 06035J1R8BBSTR

    CAP THIN FILM 1.8PF 50V 0603
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    DigiKey 06035J1R8BBSTR Cut Tape 5,920 1
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    06035J1R8BBSTR Digi-Reel 5,920 1
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    06035J1R8BBSTR Reel 3,000 3,000
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    TTI 06035J1R8BBSTR Reel 3,000 3,000
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    Avnet Abacus 06035J1R8BBSTR Reel 20 Weeks 3,000
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    Avnet Asia 06035J1R8BBSTR 18 Weeks 3,000
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    Kyocera AVX Components 06035J2R2BBSTR

    CAP THIN FILM 2.2PF 50V 0603
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    DigiKey 06035J2R2BBSTR Digi-Reel 4,157 1
    • 1 $1.37
    • 10 $0.86
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    06035J2R2BBSTR Reel 3,000 3,000
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    RS 06035J2R2BBSTR Bulk 5
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    TTI 06035J2R2BBSTR Reel 3,000 3,000
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    Kyocera AVX Components 06035J0R1PBSTR

    CAP THIN FILM 0.1PF 50V 0603
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    DigiKey 06035J0R1PBSTR Reel 3,000 3,000
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    Mouser Electronics 06035J0R1PBSTR 6,965
    • 1 $1.23
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    TTI 06035J0R1PBSTR Reel 18,000 3,000
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    Avnet Abacus 06035J0R1PBSTR Reel 20 Weeks 3,000
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    Avnet Asia 06035J0R1PBSTR 18 Weeks 3,000
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    Kyocera AVX Components 06035J120GBSTR

    CAP THIN FILM 12PF 50V 0603
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    DigiKey 06035J120GBSTR Reel 3,000 3,000
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    RS 06035J120GBSTR Bulk 5
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    Kyocera AVX Components 06035J1R8ABSTR

    ACCU-F/P
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    DigiKey 06035J1R8ABSTR Digi-Reel 2,927 1
    • 1 $1.15
    • 10 $0.909
    • 100 $0.6818
    • 1000 $0.4545
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    06035J1R8ABSTR Cut Tape 2,927 1
    • 1 $1.15
    • 10 $0.909
    • 100 $0.6818
    • 1000 $0.4545
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    Avnet Americas 06035J1R8ABSTR Reel 6,000 8 Weeks 3,000
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    Avnet Asia 06035J1R8ABSTR 18 Weeks 3,000
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    06035J Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    06035J0R1AAWTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R1ABTTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R1BAWTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R1BBTTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R1CAWTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R1CBTTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R1PAWTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R1PBSTR AVX Thin Film Capacitors, Capacitors, CAP THIN FILM 0.1PF 50V 0603 Original PDF
    06035J0R1PBTTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R1PBTTR500 AVX Capacitors - Thin Film Capacitors - CAP THIN FILM 0.1PF 50V 0603 Original PDF
    06035J0R1PBTTR500 AVX Thin Film Capacitors, Capacitors, CAP THIN FILM 0.1PF 50V 0603 Original PDF
    06035J0R1PBTTR\500 Kyocera AVX Components Thin Film Capacitor 0.1PF 50V 0603 Original PDF
    06035J0R1PBTTR\500 Kyocera AVX Components Thin Film Capacitor 0.1PF 50V 0603 Original PDF
    06035J0R1QAWTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R1QBTTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R2AAWTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R2ABTTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R2BAWTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R2BBTTR AVX Thin-Film Chip Capacitor Original PDF
    06035J0R2CAWTR AVX Thin-Film Chip Capacitor Original PDF
    ...

    06035J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TQP7M9104

    Abstract: Nelco N4000-13 0603CS-R12XJL b919 recommended land pattern for 6032 cap jedec 0603
    Text: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features • Functional Block Diagram 700-4000 MHz +32.8 dBm P1dB +49.5 dBm Output IP3


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    PDF TQP7M9104 24-pin TQP7M9104 700-placing 11Disclaimer: Nelco N4000-13 0603CS-R12XJL b919 recommended land pattern for 6032 cap jedec 0603

    ieee802.11b

    Abstract: No abstract text available
    Text: CGB 240B Datasheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB240B GaAs power amplifier MMIC has been especially developed for wireless LAN applications in the 2.4 - 2.5 GHz ISM band, compliant with IEEE 802.11b standards. The chip is also fully compliant with Bluetooth


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    PDF CGB240B 22dBm, -33dB IEEE802 ieee802.11b

    C4493

    Abstract: No abstract text available
    Text: Advance Product Information Sept. 1, 2004 5.6 Watt 3.5GHz Packaged HPA TGA2925-EPU-SD Key Features TGA2925 • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 37.5 dBm Nominal Psat Internally Partially Matched IMD3 -50 dBc @ 24 dBm SCL, Typical


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    PDF TGA2925-EPU-SD TGA2925 TGA2925-SD TGA2925 TGA2925-EPU-SD C4493

    ofdm transceiver 900mhz

    Abstract: 433 mhz rf power amplifier module efficiency 04023J2R2BBS
    Text: TQP8M9013 ½ W High Linearity 5V 2-Stage Amplifier Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / EDGE 24-pin 4x4mm leadless QFN package GND / NC NC 700-3800 MHz 29.5 dB Gain @ 2140 MHz +28 dBm P1dB +44 dBm Output IP3 2.9 dB Noise Figure


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    PDF TQP8M9013 24-pin TQP8M9013 ofdm transceiver 900mhz 433 mhz rf power amplifier module efficiency 04023J2R2BBS

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC CGB240B Preliminary Data Sheet • 2-stage InGaP HBT power amplifier for WLAN and Bluetooth applications • ACPR / IP3 tested to be compliant with IEEE802.11b standard • Fully compliant with Bluetooth requirements dual-mode use • Single voltage supply


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    PDF CGB240B IEEE802 CGB240B BluetooCGB240B P-TSSOP-10-2 TSSOP10 Version01 J-STD-033

    Untitled

    Abstract: No abstract text available
    Text: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package Product Features • Functional Block Diagram 700-4000 MHz +32.8 dBm P1dB +49.5 dBm Output IP3


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    PDF TQP7M9104 24-pin TQP7M9104 13Disclaimer:

    Untitled

    Abstract: No abstract text available
    Text: TQP7M9104 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package General Description GND/NC GND/NC GND/NC 19 20 GND/NC 21 22 16 4 15 13 GND/NC RFout/Vcc


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    PDF TQP7M9104 24-pin 13Disclaimer:

    7M9106

    Abstract: TQP7M9106 L4024 dap sot 23-5 06035J2R4ABSTR PFB10
    Text: TQP7M9106 2W High Linearity Amplifier Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 24-pin QFN 4x4mm SMT Package GND/NC GND/NC GND/NC 19 20 GND/NC 21 22 GND/NC 5 14 6 13 General Description Pin Configuration


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    PDF TQP7M9106 24-pin 7M9106 TQP7M9106 L4024 dap sot 23-5 06035J2R4ABSTR PFB10

    6 ghz amplifier 10w

    Abstract: No abstract text available
    Text: Advance Product Information October 31, 2008 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched


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    PDF TGA2924-SG TGA2924-SG 6 ghz amplifier 10w

    Untitled

    Abstract: No abstract text available
    Text: CGB 240 Datasheet 2-Stage Bluetooth InGaP HBT Power Amplifier Description: Applications: • Bluetooth Class 1 The CGB240 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band e.g. Bluetooth class 1 . Its


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    PDF CGB240 IEEE802

    MMG3006N

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 0, 1/2008 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal,


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    PDF MMG3006NT1 MMG3006NT1 MMG3006N

    Untitled

    Abstract: No abstract text available
    Text: Advance Product Information October 31, 2008 5.6 Watt 3.5GHz Packaged HPA TGA2925-SG Key Features • • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 2.5%EVM @29dBm OFDM signal at 3.5GHz 37.5 dBm Nominal Psat Internally Partially Matched


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    PDF TGA2925-SG 29dBm TGA2925-SG

    Untitled

    Abstract: No abstract text available
    Text: AH215 1 Watt, High Linearity InGaP HBT Amplifier Applications •  Final stage amplifiers for Repeaters Mobile Infrastructure SOIC-8 SMT Package Product Features  400 – 2300 MHz  18 dB Gain @ 900 MHz  +31.5 dBm P1dB  +46 dBm Output IP3 


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    PDF AH215 AH215

    K 1358 fet transistor

    Abstract: MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


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    PDF MRFG35003N6A MRFG35003N6AT1 K 1358 fet transistor MRFG35003N6AT1 A113 A114 A115 AN1955 C101 JESD22 ASME 16.17

    FR408

    Abstract: 66417 AN1955 C0603C103J5RAC ECUV1H150JCV MMG3004NT1 AN377 275-232 5 vdc 4-0308 2825 qfn
    Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 5, 5/2010 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small-signal, high


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    PDF MMG3004NT1 MMG3004NT1 FR408 66417 AN1955 C0603C103J5RAC ECUV1H150JCV AN377 275-232 5 vdc 4-0308 2825 qfn

    RF transistors with s-parameters

    Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900
    Text: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package


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    PDF FP1189 OT-89 FP1189 1-800-WJ1-4401 RF transistors with s-parameters high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900

    ML200C

    Abstract: 7-27GHz ER39 SPA1526Z bc 303 transistor
    Text: Advanced Information SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with


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    PDF SPA-1526Z EDS-105847 SPA-1526Z-EVB1 SPA-1526Z-EVB2 ML200C 7-27GHz ER39 SPA1526Z bc 303 transistor

    Q62702-G82

    Abstract: w 3425 nf MW-16 rAised cosine
    Text: GaAs MMIC CGY 353 Data Sheet • • • • • 3-stage power amplifier for 3.5 GHz applications Linear Output power 31.0 dBm Gain of 21.0 dB typ. Operating voltage 7.0 V typ. Unconditionally stable MW-16 ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    PDF MW-16 Q62702-G82 06035J1R0BBT GPW05969 Q62702-G82 w 3425 nf MW-16 rAised cosine

    PCB Rogers RO4003

    Abstract: TGA2925-SG RO4003
    Text: Advance Product Information Aug 16, 2005 5.6 Watt 3.5GHz Packaged HPA TGA2925-SG Key Features • • • • • • • • • 3.5 GHz Application Frequency Range 11 dB Nominal Gain 2.5%EVM @29dBm OFDM signal at 3.5GHz 37.5 dBm Nominal Psat Internally Partially Matched


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    PDF TGA2925-SG 29dBm TGA2925-SG PCB Rogers RO4003 RO4003

    Amplifier SOT-89 c4

    Abstract: ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87
    Text: Freescale Semiconductor Technical Data Document Number: MMG3003NT1 Rev. 5, 3/2007 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3003NT1 Broadband High Linearity Amplifier The MMG3003NT1 is a General Purpose Amplifier that is internally input matched and internally output prematched. It is designed for a broad


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    PDF MMG3003NT1 MMG3003NT1 Amplifier SOT-89 c4 ML200C Tower Mounted Amplifiers Schematic sot-89 805 898-3 bipolar transistor ghz s-parameter bk2125 Z2 J diode TRANSISTOR Z4 SOT c5 87

    PCB Rogers RO4003 substrate datasheet

    Abstract: 5 Watt S-Band Power Amplifier 6 ghz amplifier 10w HPA 1200 PCB Rogers RO4003 RO4003 TGA2924-SG MIL-C-2 Rogers RO4003 substrate
    Text: Advance Product Information Aug 16, 2005 10 Watt MMDS Packaged Amplifier TGA2924-SG Key Features • • • • • • • • • 2. 6 GHz Application Frequency Range 12 dB Nominal Gain 40 dBm Nominal Psat 2.5% EVM at 30 dBm output power Internally Partially Matched


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    PDF TGA2924-SG TGA2924-SG PCB Rogers RO4003 substrate datasheet 5 Watt S-Band Power Amplifier 6 ghz amplifier 10w HPA 1200 PCB Rogers RO4003 RO4003 MIL-C-2 Rogers RO4003 substrate

    murata COG capacitor

    Abstract: INFINEON PART MARKING CGB240 Q62702-G0174 TSSOP10 TRL1 INFINEON package PART MARKING
    Text: GaAs MMIC CGB 240 Preliminary Datasheet • • • • • • • • • 2 stages Bluetooth InGaP HBT-Power Amplifier Single Voltage Supply Operating voltage range: 2.0 to 6 V


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    PDF 23dBm 16dBm 35dBc IEEE802 murata COG capacitor INFINEON PART MARKING CGB240 Q62702-G0174 TSSOP10 TRL1 INFINEON package PART MARKING

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 4, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3006NT1 Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A,


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    PDF MMG3006NT1 MMG3006NT1

    spa1526

    Abstract: No abstract text available
    Text: SPA1526Z SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT Amplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER Package: SOF-26 NOT FOR NEW DESIGNS Product Description Features RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT power amplifier. The SPA1526Z is made with InGaP-on-GaAs


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    PDF SPA1526Z SOF-26 SPA1526Z SPA1526ZSQ SPA1526ZSR 850MHz spa1526