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Catalog Datasheet	MFG & Type	Document Tags	PDF
DIODE D100 to220 Abstract: No abstract text available Text: IPB051NE8N G 05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)	Original	IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 051NE8N PG-TO262-3 05CNE8N DIODE D100 to220	PDF
051NE8N Abstract: 054NE8N IEC61249-2-21 IPP054NE8N PG-TO220-3 Text: IPB051NE8N G 05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)	Original	IPB051NE8N IPI05CNE8N IPP054NE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 054NE8N IEC61249-2-21 PG-TO220-3	PDF
051ne8n Abstract: 054NE8N 05CNE8N IPB051NE8NG IPP054NE8N PG-TO220-3 IPI05CNE8NG Text: IPB051NE8N G 05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)	Original	IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 051ne8n 054NE8N 05CNE8N IPB051NE8NG PG-TO220-3 IPI05CNE8NG	PDF
051ne8n Abstract: IPP054NE8N PG-TO220-3 Text: IPB051NE8N G 05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO 263) 5.1 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature	Original	IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 051ne8n PG-TO220-3	PDF