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Catalog Datasheet	MFG & Type	PDF	Document Tags
BUK9212-55B Abstract: No abstract text available Text: BUK9212-55B TrenchMOS logic level FET Rev. 02 — 12 December 2003 M3D300 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive HPA TrenchMOS™ technology.	Original	PDF	BUK9212-55B M3D300 OT428 BUK9212-55B
Untitled Abstract: No abstract text available Text: DP AK BUK9212-55B N-channel TrenchMOS logic level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	PDF	BUK9212-55B
BUK9212-55B Abstract: No abstract text available Text: DP AK BUK9212-55B N-channel TrenchMOS logic level FET Rev. 03 — 3 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to	Original	PDF	BUK9212-55B BUK9212-55B
N3NE Abstract: No abstract text available Text: THIS DRAWING AND DESIGN HEREON CON STITUTES A PROPRIETARY DESIGN OF PACKARD ELECTRIC DIVISION AND IS NOT TO BE DUPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD ELECTRIC DIVISION. DO NOT SCALE DATE SYM 06FE86 RELEASED 06 F E 8 6 REVISED 03JN86 11MY87	OCR Scan	PDF	06FE86 03JN86 11MY87 03NO88 05JA8S 21AP83 18APS0 23AUS1 03MRS3 26SE34 N3NE
C5125 Abstract: No abstract text available Text: THIS DRAWING AND DESIGN HEREON CON S T IT U T E S A PROPRIETARY DESIGN OF PACKARD E LE C T R IC DIVISION AND IS NOT TO BE D UPLICATED OR REPRODUCED WITH OUT AUTHORITY OF PACKARD E LE C T R IC DIVISION. 8 6 7 5 4 2 3 PART NO. 1 ZONE DATE SYM REVISION RECORD	OCR Scan	PDF	06OC83 21JL8< 8S0004 -C-5125 060C88 06OC8S 03NO88 08NO88 C5125