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    03MAY2006 Search Results

    03MAY2006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VN820-E High-side driver Datasheet − production data Features Type RDS on VN820-E VN820SP-E VN820B5-E VN820PT-E VN820-12-E VN820-11-E IOUT 10 VCC 1 PowerSO-10 40 mΩ 9A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC


    Original     		PDF VN820-E VN820-E VN820SP-E VN820B5-E VN820PT-E VN820-12-E VN820-11-E PowerSO-10

    6942

    Abstract: No abstract text available
    Text: VN750 High-side driver Datasheet − production data Features Type VN750 VN750S VN750PT VN750-B5 RDS on IOUT VCC SO-8 60 mΩ 6A PENTAWATT 36 V • CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection ■ Shorted load protection


    Original     		PDF VN750 VN750 VN750S VN750PT VN750-B5 6942

    Untitled

    Abstract: No abstract text available
    Text: VND810PEP-E Double channel high-side driver Features Type RDS on IOUT VCC VND810PEP-E 160mW(1) 3.5A(1) 36V 1. Per each channel. PowerSSO-12 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection


    Original     		PDF VND810PEP-E 160mW PowerSSO-12 2002/95/EC VND810PEP-E

    Untitled

    Abstract: No abstract text available
    Text: VNQ810PEP-E Quad channel high side driver Features Type RDS on IOUT VCC VNQ830PEP-E 160 m(1) 5 A(1) 36 V 1. Per each channel. PowerSSO-24 •CMOS compatible inputs Description •Open Drain status outputs •On-state open load detection The VND810PEP-E is a monolithic device made


    Original     		PDF VNQ810PEP-E VNQ830PEP-E PowerSSO-24 VND810PEP-E VNQ810PEP-E ISO7637

    JESD97

    Abstract: LIS3L02AL LIS3L02ALTR
    Text: LIS3L02AL MEMS INERTIAL SENSOR: 3-axis - +/-2g ultracompact linear accelerometer Features • 2.4V to 3.6V single supply operation ■ Low power consumption ■ ±2g full-scale ■ 0.5mg resolution over 100hz bandwidth ■ Embedded self test ■ Output voltage, offset and sensitivity


    Original     		PDF LIS3L02AL 100hz LIS3L02AL JESD97 LIS3L02ALTR

    STTH3002W

    Abstract: STTH 150 60 PI STTH3002 STTH3002G STTH3002G-TR STTH3002PI
    Text: STTH3002 Ultrafast recovery diode Main product characteristics IF AV 30 A VRRM 200 V Tj (max) 175° C VF (typ) 0.77 V trr (typ) 22 ns A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time


    Original     		PDF STTH3002 STTH3002PI DO-247 STTH3002W STTH3002 DO-247, STTH30and STTH3002W STTH 150 60 PI STTH3002G STTH3002G-TR STTH3002PI

    Untitled

    Abstract: No abstract text available
    Text: VNQ810 Quad channel high side driver Features Type RDS on IOUT VCC VNQ810 160mΩ(1) 3.5A(1) 36V ) s ( ct 1. Per each channel. u d o SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection


    Original     		PDF VNQ810 SO-28 VNQ810 VND810 DocID7387

    Untitled

    Abstract: No abstract text available
    Text: VND830 Double channel high-side driver Features Type RDS on IOUT VCC VND830 60mΩ(1) 6A(1) 36V ) s ( ct 1. Per each channel. u d o SO-16L • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open load detection Description ■ Off-state open load detection


    Original     		PDF VND830 SO-16L VND830

    vnd830 package information

    Abstract: VNQ830PTR-E ISO7637 VND830-E VNQ830P-E
    Text: VNQ830P-E Quad channel high-side driver Features Type RDS on IOUT VCC VNQ830P-E 65 mΩ(1) 6A 36 V 1. Per each channel. • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC guidelines ■ Very low standby current ■ CMOS compatible input


    Original     		PDF VNQ830P-E SO-28 VNQ830P-E VND830P-E vnd830 package information VNQ830PTR-E ISO7637 VND830-E

    Untitled

    Abstract: No abstract text available
    Text: VND670SP Dual high-side switch with dual Power MOSFET gate driver bridge configuration Features Type RDS(on) IOUT VCC VND670SP 30mΩ(1) 15A(1) 40V ) s ( ct 10 1. Per each channel. 1 u d o PowerSO-10 • 5V logic level compatible inputs ■ Gate drive for two external power MOSFET


    Original     		PDF VND670SP PowerSO-10

    Untitled

    Abstract: No abstract text available
    Text: VN750 High-side driver Datasheet − production data Features Type RDS on IOUT VCC 60 mΩ 6A u d o CMOS compatible input • On-state open-load detection ■ Off-state open-load detection ■ Shorted load protection ■ Undervoltage and overvoltage shutdown


    Original     		PDF VN750 VN750S VN750PT VN750-B5 VN750

    STTH2002G

    Abstract: No abstract text available
    Text: STTH2002 Ultrafast recovery diode Features K A • Ultrafast switching ■ Low reverse current ■ Low thermal resistance ■ Reduces switching and conduction losses ■ High Tj ■ Insulating voltage: 2500 V rms ■ Capacitance: 7 pF K A A K Description K


    Original     		PDF STTH2002 O-220AC STTH2002D O-220AC O-220AC, O-220ACins STTH2002DI STTH2002G STTH2002G

    do-201 footprint

    Abstract: STTH4R02 STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U transistor p2w 4r2s
    Text: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt


    Original     		PDF STTH4R02 O-220AC STTH4R02D STTH4R02 O-220FPAC STTH4R02FP O-220AC, O-220FPAC, DO-201AB, STTH4R02B do-201 footprint STTH4R02B STTH4R02D STTH4R02FP STTH4R02S STTH4R02U transistor p2w 4r2s

    IEC1131

    Abstract: ISO7637 VN800PT VN800PT13TR VN800S VN800S13TR
    Text: VN800S VN800PT High-side driver Features Type RDS on IOUT VCC VN800S VN800PT 135 mΩ 0.7 A 36 V • CMOS-compatible input ■ Thermal shutdown ■ Current limitation ■ Shorted load protection ■ Under-voltage and over-voltage shutdown ■ Protection against loss of ground


    Original     		PDF VN800S VN800PT VN800S VN800PT ISO7637 IEC1131 VN800PT13TR VN800S13TR

    Untitled

    Abstract: No abstract text available
    Text: VND810SP Double channel high-side driver Features Type RDS on IOUT VCC VND810SP 160 mΩ(1) 3.5 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • Very low standby current ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection


    Original     		PDF VND810SP PowerSO-10 VND810SP

    Untitled

    Abstract: No abstract text available
    Text: VN920 Single channel high-side solid-state relay Features Type RDS on IOUT VCC VN920 VN920-B5 VN920SO 16 mΩ 30 A 36 V P2PAK PENTAWATT • CMOS compatible input ■ Proportional load current sense ■ Shorted load protection ■ Under-voltage and over-voltage shutdown


    Original     		PDF VN920 VN920-B5 VN920SO VN920

    ISO7637

    Abstract: VND810M VNQ810M VNQ810M13TR VNQ830M
    Text: VNQ810M Quad channel high side driver Features Type RDS on IOUT VCC VNQ810M 150mΩ(1) 0.6A(1) 36V 1. Per each channel. • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection ■ Shorted load protection


    Original     		PDF VNQ810M SO-28 VNQ810M VND810M VNQ830M ISO7637 VNQ810M13TR

    ISO7637

    Abstract: VND830 VND83013TR
    Text: VND830 Double channel high-side driver Features Type RDS on IOUT VCC VND830 60mΩ(1) 6A(1) 36V 1. Per each channel. SO-16L • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open load detection Description ■ Off-state open load detection


    Original     		PDF VND830 SO-16L VND830 ISO7637 VND83013TR

    VND920

    Abstract: No abstract text available
    Text: VND920 Double channel high-side solid-state relay Features Type RDS on VND920 16 mΩ IOUT (1) 35 A VCC 36 V 1. Per channel with all the output pins connected to the PCB. SO-28 (double island) • CMOS compatible input ■ Proportional load current sense ■


    Original     		PDF VND920 SO-28 VND920

    Untitled

    Abstract: No abstract text available
    Text: VN920D-B5 VN920DSO High-side driver Features Type RDS on IOUT VCC VN920D-B5 VN920DSO 18 mΩ 30 A 36 V P2PAK • CMOS-compatible input ■ On-state open load detection ■ Off-state open load detection ■ Shorted load protection ■ Under-voltage and over-voltage shutdown


    Original     		PDF VN920D-B5 VN920DSO SO-16L VN920D-B5 VN920DSO

    STTH2R02U

    Abstract: No abstract text available
    Text: STTH2R02 Ultrafast recovery diode Main product characteristics IF AV 2A VRRM 200 V Tj (max) 175° C VF (typ) 0.7 V trr (typ) 15 ns A K A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times


    Original     		PDF STTH2R02 DO-15 STTH2R02Q STTH2R02 STTH2R02A STTH2R02U DO-15, STTH2R02U

    SMC/DOC-0000181564

    Abstract: No abstract text available
    Text: STTH4R02 Ultrafast recovery diode Features A • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery times ■ High junction temperature K K A A K K TO-220AC STTH4R02D Description The STTH4R02 uses ST's new 200 V planar Pt


    Original     		PDF STTH4R02 O-220AC STTH4R02D STTH4R02 O-220FPAC STTH4R02FP O-220AC, O-220FPAC, DO-201AB, STTH4R02B SMC/DOC-0000181564

    STTH802D

    Abstract: No abstract text available
    Text: STTH802 Ultrafast recovery diode Main product characteristics IF AV 8A VRRM 200 V Tj (max) 175° C VF (typ) 0.8 V trr (typ) 17 ns K A K A Features and benefits • Very low conduction losses ■ Negligible switching losses ■ Low forward and reverse recovery time


    Original     		PDF STTH802 O-220AC STTH802D O-220FPAC STTH802FP STTH802B STTH802 STTH802G O-220AC, O-220FPAC, STTH802D

    Untitled

    Abstract: No abstract text available
    Text: THIS £L DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR PUBLICATION R 1G H T S 20 LOC DIST R E V I SIONS FT RESERVED. . 7 5 0± . 0 I 5 LTR DESCRIPTION DATE DWN APVD R E V I S E D E C O - 06 - 0 1 0 3 2 2 03MAY2006


    OCR Scan     		PDF COPYRIGHT20 ECO-06 ECO-09 MAY2003 IMAY2003 -2I378I