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    03AH54 Search Results

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    03AH54 Price and Stock

    IXYS Corporation MDD26-14N1B

    Diode Modules 26 Amps 1400V
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    TTI MDD26-14N1B Box 108 36
    • 1 -
    • 10 -
    • 100 $16.86
    • 1000 $16.86
    • 10000 $16.86
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    IXYS Corporation MDD26-16N1B

    Diode Modules 26 Amps 1600V
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    TTI MDD26-16N1B Box 108 36
    • 1 -
    • 10 -
    • 100 $17.99
    • 1000 $17.13
    • 10000 $17.13
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    IXYS Corporation MDD26-12N1B

    Diode Modules 26 Amps 1200V
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    TTI MDD26-12N1B Box 108 36
    • 1 -
    • 10 -
    • 100 $15.63
    • 1000 $15.63
    • 10000 $15.63
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    IXYS Corporation MDD172-16N1

    Diode Modules 172 Amps 1600V
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    TTI MDD172-16N1 Box 60 6
    • 1 -
    • 10 $46.78
    • 100 $43.22
    • 1000 $43.22
    • 10000 $43.22
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    IXYS Corporation MDD142-08N1

    Diode Modules 142 Amps 800V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI MDD142-08N1 Box 6
    • 1 -
    • 10 $39.18
    • 100 $36.2
    • 1000 $35.49
    • 10000 $35.49
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    03AH54 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PHP32N06LT; PHB32N06LT N-channel enhancement mode field effect transistor Rev. 01 — 06 November 2001 Product data 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS 1 technology. Product availability:


    Original     		PDF PHP32N06LT; PHB32N06LT PHP32N06LT O220AB) PHB32N06LT OT404 O-220AB)

    32N06LT-01

    Abstract: 32N06LT PHP32N06LT php32n06lt2
    Text: PHP32N06LT N-channel TrenchMOS logic level FET Rev. 02 — 30 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PDF PHP32N06LT PHP32N06LT 32N06LT-01 32N06LT php32n06lt2

    32N06LT-01

    Abstract: PHB32N06LT 32n06lt01 03ah54 32N06
    Text: PHB32N06LT N-channel TrenchMOS logic level FET Rev. 02 — 30 November 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product is designed and qualified for use in


    Original     		PDF PHB32N06LT PHB32N06LT 32N06LT-01 32n06lt01 03ah54 32N06