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    0118165BJ3

    Abstract: No abstract text available
    Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1 M x 16 1 0 /1 0 E D O D R A M Features • 1,048,576 w ord by 16 bit organization • Low Power D issipation - Active max - 185 mA /1 6 5 mA /1 4 0 mA _ s ta n d b y : TTL Inputs (max) - 1.0 mA • Single 3.3V ± 0.3V or 5.0V ± 0.5V pow er supply


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    trw 1014

    Abstract: ibm dram
    Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1M x 16 10/10 EDO DRAM Features • 1,048,576 wordby 16 bit organization • Low Power Dissipation - Active max - 130 mA /1 0 5 mA . Standby: TTL Inputs (max) - 1.0 mA " Standby: CMOS Inputs (max) - 1 0 mA (SP version)


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    Untitled

    Abstract: No abstract text available
    Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1 M x 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)


    OCR Scan     		PDF IBM0118165 IBM0118165M IBM0118165B IBM0118165P 130mA. 165mA 105mA. 200nA