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    00BFL Search Results

    00BFL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    932S200BFLF Renesas Electronics Corporation Frequency Timing Generator for Dual Server/Workstation Systems Visit Renesas Electronics Corporation
    932S200BFLFT Renesas Electronics Corporation Frequency Timing Generator for Dual Server/Workstation Systems Visit Renesas Electronics Corporation
    DLP9500BFLN Texas Instruments DLP® 0.95 1080p 2xLVDS Type-A DMD 355-CLGA Visit Texas Instruments Buy
    DLP6500BFLQ Texas Instruments DLP® 0.65 1080p Type A DMD 203-CLGA Visit Texas Instruments Buy
    DLP7000BFLP Texas Instruments DLP® 0.7 XGA 2xLVDS Type-A DMD 203-CLGA Visit Texas Instruments Buy
    SF Impression Pixel

    00BFL Price and Stock

    Vishay Electro-Films MIC5000BFLMGNHT5

    MICROWAVE RESISTOR, 0402, 50 OHM
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    DigiKey MIC5000BFLMGNHT5 Reel 3,000 500
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    Newhaven Display International NHD-10.1-1024600BF-LSXP

    GRAPHIC DISPLAY TFT RGB 10.1"
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    DigiKey NHD-10.1-1024600BF-LSXP Bulk 41 1
    • 1 $180.39
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    Mouser Electronics NHD-10.1-1024600BF-LSXP 26
    • 1 $174.34
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    RS NHD-10.1-1024600BF-LSXP Bulk 18 Weeks 1
    • 1 $217.88
    • 10 $193.91
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    Master Electronics NHD-10.1-1024600BF-LSXP 10
    • 1 $172.78
    • 10 $165.02
    • 100 $162.55
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    Texas Instruments DLP7000BFLP

    IC DIG MICROMIRROR DEV 203LCCC
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    DigiKey DLP7000BFLP Tray 13 1
    • 1 $1440.76
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    Mouser Electronics DLP7000BFLP 24
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    Texas Instruments DLP9500BFLN

    IC DIG MICROMIRROR DEV 355LCCC
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    DigiKey DLP9500BFLN Tray 1
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    Mouser Electronics DLP9500BFLN
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    Texas Instruments DLP9000BFLS

    IC DIG MICROMIRROR DEV 355CLGA
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    DigiKey DLP9000BFLS Tray 12
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    Mouser Electronics DLP9000BFLS
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    00BFL Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BF660

    Abstract: transistor 558
    Text: 7110ö2L> 00bflfe,37 024 B P H IN BF660 J V_ SILICON PLANAR TRANSISTOR P-N-P transistor, in a microminiature plastic envelope; intended for use as oscillator in v.h.f. tuners with extended frequency range and/or in conjunction with MOS-FETs in thick and thin-film circuits.


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    711002b 00bflti37 BF660 OT-23. BF660 transistor 558 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA WM ^0^7240 00Bfl47b 07b • THM3220C5BS/BSG-60/70 PRELIMINARY 2,097,152 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM3220C5BS/BSG is a 2,097,152 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which is assem­ bled with 4 pcs of TC5118165BJ on the printed circuit board. This module is optimized for application to the systems which


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    00Bfl47b THM3220C5BS/BSG-60/70 THM3220C5BS/BSG TC5118165BJ 89MAX. THM3220C5BS/BSG 17EHfl PDF

    fet junction n-channel transistor

    Abstract: small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340
    Text: 711002b DDbôO?! ÔT7 • P H IN Philips Semiconductors D ata sh e e t s ta tu s Prelim inary specification d a te of is s u e O ctob e r 1990 FEATURES • Low noise, noise figure < 1 dB • High o ff isolation. 2N4340 N-channel J-FET PINNING - TO-18 PIN 1


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    711Dfi2b 2N4340 711Dfl2b fet junction n-channel transistor small signal audio FET 2N4340 N-Channel JFET transistor J-FET philips jfet transistor 2N4340 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistors • • BUZ 84 BUZ 84 A N channel Enhancement mode Type V ds Id BUZ 84 800 V BUZ 84 A 800 V Package 1> Ordering Code Tc ^OS on 5.3 A 25 "C 2.0 £2 TO-204 AA C67078-A1013-A2 6.0 A 29 "C 1.5 n TO-204 AA C67078-A1013-A3 Maximum Ratings


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    O-204 C67078-A1013-A2 C67078-A1013-A3 23SLG5 00bfl031 fl23SbOS GDbfi032 PDF

    Untitled

    Abstract: No abstract text available
    Text: Section 1 H8S/2245 Series Features 1.1 H8S/2245 Series Functions H8S/2245 Series microcomputers are designed for faster instruction execution, using a realtime control oriented CPU with an internal 32bit architecture, and can run programs based on the C high-level language efficiently. As well as large-capacity ROM and RAM, these microcomputers


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    H8S/2245 32bit H8S/2000 16-bit 32-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: rZ J S G S -T H O M S O N * 7 0 * llQ g li2 ( 0 II IL i( g r a iD ( @ i M28C17 PARALLEL ACCESS 16K (2K x 8) EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 70ns ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 30mA - Standby Current 100^A


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    M28C17 PDF

    Untitled

    Abstract: No abstract text available
    Text: £ ÿ j S G S ‘ T H O M S O N Hffi 5 [gfL.II(aiïïKÎ(B)M(Sg M27W401 VERY LOW VOLTAGE 4 Megabit (512K x 8) OTP ROM • VERY LOW VOLTAGE READ OPERATION: 2.7V to 5.5V ■ ACCESS TIME: - 150ns(T a =0 to 70 °C) - 200ns (T a = -20 to 70 °C) - LOW POWER "CMOS” CONSUMPTION:


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    M27W401 150ns 200ns 48sec. M27W401 M27C4001 TSOP32 PLCC32 PDF

    Untitled

    Abstract: No abstract text available
    Text: £ ÿ j S G S ’T H O M SO N leænLimowigs M27C2001 2 Megabit 256K x 8 UV EPROM and OTP ROM • VERY FAST ACCESS TIME: 70ns ■ COMPATIBLE with HIGHSPEED MICROPROCESSORS, ZERO WAIT STATE ■ LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100(j.A


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    M27C2001 24sec. M27C2001 as262 144by TSOP32 PDF

    m2716a

    Abstract: No abstract text available
    Text: £ ÿ j SGS-THOMSON D»i LI(gï[si(ô RiD(gl M2716 N M O S 16K (2K x 8) UV EPROM • 2048 x 8 ORGANIZATION ■ 525mW Max ACTIVE POWER, 132mW Max STANDBY POWER ■ ACCESS TIME: - M2716-1 is 350ns - M2716 is 450ns - SINGLE 5V SUPPLY VOLTAGE - STATIC-NO CLOCKS REQUIRED


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    M2716 525mW 132mW M2716-1 350ns M2716 450ns FDIP24W m2716a PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON n»i Li TO K!ID®i M27V101 LOW VOLTAGE 1 Megabit (128K x 8 UV EPROM and OTP ROM • LOW VOLTAGE READ OPERATION: 3V to 5.5V ■ ACCESS TIME: 120,150 and 200ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 15mA - Standby Current 20|*A ■ SMALL PACKAGES for SURFACE


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    M27V101 200ns LCCC32W, PLCC32 TSOP32 12sec. M27V101 M27C1001 LCCC32W PLCC32 PDF

    uPD70280

    Abstract: uPD70116
    Text: PRELIMINARY DATA SH EET NEC MOS INTEGRATED CIRCUIT ELECTRON DEVICE ¿¿PD70280 V51 16-BIT M ICROPROCESSOR DESCRIPTION ThejiPD 70280 V51 is a 16-bit m icroprocessor containing a CPU equivalent to the ¿iPD70116H {V30HL™)and peripheral functions for the PC/XT™ on a single chip.


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    V51TM 16-BIT uPD70280 uPD70116H V30HLTM) PD70280 PD70270 V41TM) iPD70280, uPD70116 PDF

    mosfet marking code gg

    Abstract: marking g1s marking code g1s
    Text: 711002b G 0 b a ? n TTT H P H I N BF997 SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic SOT143 microminiature envelope with source and substrate interconnected, intended for u.h.f. and v.h.f. applications, such as u.h.f./v.h.f. television


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    711002b BF997 OT143 mosfet marking code gg marking g1s marking code g1s PDF

    blv 33 transistor

    Abstract: BLV25 rf 2222 vp1020 multilayer
    Text: N AMER PHILIPS/DISCRE TE bTE » • bbS3<i31 ÜÜEflc Mcl l'il BLV25 I V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily for use in v.h.f.-f.m . broadcast transmitters. Features: • internally matched input for wideband operation and high power gain;


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    BLV25 blv 33 transistor BLV25 rf 2222 vp1020 multilayer PDF

    FZJ timer

    Abstract: M28C64C M28C64X PDIP28 S028 Z3A10
    Text: M28C64C M28C64X r= J S C S -THO M SO N *7 Æ > PARALLEL ACCESS 64K 8K x 8 EEPROM • FAST ACCESS TIME: 150ns ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION - Active Current 30mA - Standby Current 10OpA ■ FAST WRITE CYCLE - 32 Bytes Page W rite Operation


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    M28C64C M28C64X 150ns 100pA M28C64C, TSOP28 TSOP28 FZJ timer M28C64X PDIP28 S028 Z3A10 PDF

    FZJ 101

    Abstract: LM358 SGS lm358 sum LM158A LM258 circuit diagram lm358 lm358 thomson LM158 LM258A LM258N
    Text: rZ J S G S -T H O M S O N M m L M 1 5 8 , A - L M 2 5 8 , A L M 3 5 8 , A IIL I § » iN O ^ LOW POWER DUAL OPERATIONAL AMPLIFIERS . INTERNALLY FREQUENCY COMPENSATED . LARGE DC VOLTAGE GAIN : 10OdB > WIDE BANDWIDTH (unity gain : 1.1 MHz (temperature compensated)


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    LM158 -LM258 LM358 10OdB 500mA) FZJ 101 LM358 SGS lm358 sum LM158A LM258 circuit diagram lm358 lm358 thomson LM258A LM258N PDF

    lm324

    Abstract: 7R2R237 ic lm324 LM324 14 PIN DIAGRAM LM324 circuit DIAGRAM LM324 ic operational amplifier LM324 LM124 LM124A LM224
    Text: S G S -T H O M S O N * 7 * LM 124,A - LM 224,A LM 324,A LOW POWER QUAD OPERATIONAL AMPLIFIERS : N DIP14 Plastic Package DESCRIPTION These circuits consist of four independent, high gain, internally frequency compensated operational amplifiers which were designed specifically for auto­


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    LM124 LM224 LM324 10OdB DIP14 7R2R237 0DtflD74 ic lm324 LM324 14 PIN DIAGRAM LM324 circuit DIAGRAM LM324 ic operational amplifier LM324 LM124A PDF

    Untitled

    Abstract: No abstract text available
    Text: H a C D P 6402, r r is S E M I C O N D U C T O R CMOS Universal Asynchronous Receiver/Transmitter UART August 1996 Features • Description Low Power CMOS C ircuitry.7.5mW (Typ) at 3.2M Hz (Max Freq.) at V q q = 5V • Baud Rate


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    CDP6402D, PDF

    Untitled

    Abstract: No abstract text available
    Text: HD-15531/883 HARRIS S E M I C O N D U C T O R CMOS Manchester Encoder-Decoder September 1996 Features • Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Support of MIL-STD-1553


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    HD-15531/883 MIL-STD883 MIL-STD-1553 15531B 32-Bits HD-15531/883 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 } H M - 6 5 1 2 / 8 8 3 2K x 8 Asynchronous CMOS Static RAM August 1996 Features • 6 Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. T h e H M -6 5 1 6 2 /8 8 3 is a C M O S 2 0 4 8 x 8 Static Random


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    MIL-STD883 70/90ns 00bfi34b HM-65162/883 43DEE71 00bfl3M? PDF

    Untitled

    Abstract: No abstract text available
    Text: if ì H A R R IS H M -6 5 1 8 S E M I C O N D U C T O R 1024 X 1 CMOS RAM August 1996 Features Description • Low Power Standby. 50|.iW Max The HM-6518 is a 1024 x 1 static CMOS RAM fabricated using self-aligned silicon gate technology. Synchronous


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    HM-6518 20mW/MHz 180ns 43D2271 PDF

    Untitled

    Abstract: No abstract text available
    Text: Í5 1 H A R R HD-4702 IS S E M I C O N D U C T O R August 1996 CMOS Programmable Bit Rate Generator Features Description • HD-4702 Provides 13 Commonly Used Bit Rates The HD-4702 Bit Rate Generator provides the necessary clock signals for digital data transmission systems, such as a UART. It


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    HD-4702 HD-4702 4576MHz 4576MHz 00bfllb4 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM-6642 HARRIS S E M I C O N D U C T O R 5 1 2 x 8 CM O S PROM September 1996 Features Description • Low Power Standby and Operating Power - IC C S B . 100|iA ICCOP 20mA at 1 MHz The HM-6642 is a 512 x 8 CMOS NiCr fusible link


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    HM-6642 HM-6642 120/200ns PDF

    Untitled

    Abstract: No abstract text available
    Text: flì HARRIS CDP1823, ^^30 S E M I C O N D U C T O R 128-Word x 8-Bit LSI Static RAM August 1996 Features • Description Fast Access Tim e The CDP1823 and CDP1823C are 128-word by 8-bit CMOS SOS static random-access memories. These memories are compatible with general-purpose microprocessors. The two


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    CDP1823, 128-Word CDP1823 CDP1823C 450ns 250ns PDF

    Untitled

    Abstract: No abstract text available
    Text: HD-15531 HARRIS S E M I C O N D U C T O R CMOS Manchester Encoder-Decoder August 1996 Description Features • Support of MIL-STD-1553 • Data Rate 15531B .2.5 Megabit/Sec • Data Rate (155 3 1 ). 1.25 Megabit/Sec


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    HD-15531 MIL-STD-1553 15531B 25MBIT HD3-15531B-9 HD1-15531 HD1-15531B-9 00bfi217 00bfi21fi PDF