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    Z3A10 Search Results

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    Z3A10 Price and Stock

    Carling Technologies LL3AZ3A-100

    HARDWARE SWITCH ROCKER
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    DigiKey LL3AZ3A-100 Bulk 100
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    • 100 $6.3395
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    Mouser Electronics LL3AZ3A-100
    • 1 $10.91
    • 10 $9.27
    • 100 $6.78
    • 1000 $6.78
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    Master Electronics LL3AZ3A-100
    • 1 -
    • 10 $8.57
    • 100 $5.73
    • 1000 $3.41
    • 10000 $3.41
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    Sager LL3AZ3A-100
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    Bourns Inc PVZ3A105C01R00

    TRIMMER 1M OHM 0.1W J LEAD TOP
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    DigiKey PVZ3A105C01R00 Cut Tape 1
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    Bourns Inc PVZ3A103C01R00

    TRIMMER 10K OHM 0.1W J LEAD TOP
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    DigiKey PVZ3A103C01R00 Reel 4,000
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    PVZ3A103C01R00 Cut Tape 1
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    PVZ3A103C01R00 Digi-Reel 1
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    Bourns Inc PVZ3A104C01R00

    TRIMMER 100K OHM 0.1W J LEAD TOP
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    DigiKey PVZ3A104C01R00 Cut Tape 1
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    Bourns Inc PVZ3A102A01R00

    TRIMMER 1K OHM 0.1W J LEAD TOP
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    DigiKey PVZ3A102A01R00 Reel 6,000
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    Find more Z3A10 price and stock on Findchips.com

    Z3A10 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Z3A10 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    Z3A10 Semitron Data Book 1991 Scan PDF
    Z3A100 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    Z3A100 Semitron Data Book 1991 Scan PDF
    Z3A100 Semitron 100V, 10Wt General purpose voltage reference/regulator diode Scan PDF
    Z3A100R Semitron 100V, 10Wt General purpose voltage reference/regulator diode Scan PDF

    Z3A10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HM621664HB Series 65536-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-349A Z Rev. 1.0 Sep. 11, 1996 Description The HM621664HB is an asynchronous high speed static RAM organized as 64-kword x 16-bit. It realize high speed access time (15/20 ns) with employing 0.8 nm CMOS process and high speed circuit designing


    OCR Scan     		PDF HM621664HB 65536-word 16-bit ADE-203-349A 64-kword 16-bit. 400-mil 44-pin

    rockwell 6512

    Abstract: CPU R6502 t4806 microprocessor Rockwell R6500 R6505 R6503 ZP D1
    Text: • 7011073 0 D n S 7 1 ATS * R K U H650X • R651X R650X and R651X Microprocessors CPU * Rockwell DESCRIPTION FEATURES The 8-bit R6500 microprocessor devices are produced with N-channel, silicon gate technology. Performance speeds are enhanced by advanced system architecture. This innovative


    OCR Scan     		PDF H650X R651X R650X R651X M6800 R6512, R6502, rockwell 6512 CPU R6502 t4806 microprocessor Rockwell R6500 R6505 R6503 ZP D1

    tower pro sg 90

    Abstract: No abstract text available
    Text: SGS-THOMSON Æ M28F410 M28F420 ÍL [ fï C M O S 4 Megabit x8 or x16, 7 Blocks FLASH M E M O R Y ADVANCE DATA DUAL x8 andx16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and


    OCR Scan     		PDF M28F410 M28F420 andx16 TSOP56 20/25mA M28F410, 7W1S37 tower pro sg 90

    JD 1806

    Abstract: M28C84-W
    Text: Æ T SGS-THOMSON M28C64 * 7 # . o^fl S{B§ ii[yi(^în^(S)&SD(^ 64K (8K x 8) PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: - 90ns at 5V - 120nsat 3V ■ SINGLE SUPPLY VOLTAGE: - 5V ± 10% for M28C64 - 2.7V to 3.6V for M28C64-xxW ■ LOW POWER CONSUMPTION


    OCR Scan     		PDF M28C64 120nsat M28C64 M28C64-xxW M28C64-W JD 1806 M28C84-W

    03CZ

    Abstract: No abstract text available
    Text: HM6216255H Series 262114-word x 16-bit High Speed CMOS Static RAM HITACHI ADE-203-763 Z Preliminary Rev. 0.0 Mar. 27, 1997 Description The HM6216255H Series is an asynchronous high speed static RAM organized as 256-k word x 16-bit. It has realized high speed access time by employing CMOS process and high speed circuit designing technology. It


    OCR Scan     		PDF HM6216255H 262114-word 16-bit ADE-203-763 256-k 16-bit. 400-mil 44-pin ns/12 03CZ

    a7532

    Abstract: No abstract text available
    Text: ¿ = 7 *7 Æ > S G S -1 H 0 M S 0 N M W iU Iê M M X Ê i M 27V 10 1 LOW VOLTAGE 1 Megabit 128K x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100fiA


    OCR Scan     		PDF 100fiA 12sec. M27V101 M27C1001 a7532

    Untitled

    Abstract: No abstract text available
    Text: 5 7 . S G S -T H O M S O N [fflM iH iM M B g S M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE


    OCR Scan     		PDF M28V841 TSOP40 100ns 7T2T237

    1A15

    Abstract: honeywell hr 20 HLX6408
    Text: Honeywell Advance Information 512K x 8 STATIC RAM—SOI HLX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 |im Process (LeH= 0.4 |im) • Read/Write Cycle Times < 20 ns (Typical) ¿25 ns (-55 to 125°C) • Total Dose Hardness through 5x105rad(Si02)


    OCR Scan     		PDF 5x105rad 1x101 HLX6408 1x109 40-Lead 1A15 honeywell hr 20 HLX6408

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-084G Z HM62W256 Series 32,768-word x 8-bit Low Voltage Operation CMOS Static RAM Rev. 7.0 Jun. 1 9 ,1 9 9 5 HITACHI Features Ordering Information • Low voltage operation SRAM Operating Supply Voltage: 3.0 V to 3.6 V • 0.8 pm Hi-CMOS process • High speed


    OCR Scan     		PDF ADE-203-084G HM62W256 768-word HM62W256LFP-5SLT HM62W256LFP-7SLT HM62W256LFP-8SLT 28-pin FP-28DA) HM62W256LFP-7ULT HM62W256LT-7

    Untitled

    Abstract: No abstract text available
    Text: S G S -1 H 0 M S 0 N M28F151 [^ a g ^ ( Q g L [i W ( Q ) R { ]D © S 1.5 Megabit (192K x 8, Chip Erase) FLASH MEMORY PRODUCT PREVIEW • VALID MEMORY ADDRESS SPACE: OOOOOh to 2FFFFh ■ FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Active Current: 15mATyp.


    OCR Scan     		PDF M28F151 15mATyp. M28F151 ar555 007T0S2 TSOP32 TSOP32