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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: KM48S2020C CMOS SDRAM Revision History Revision ,4 November 1997 - tRDL has changed 10ns to 12ns. - Binning -10 does not meet PC100 characteristics . So AC parameter/Characteristics have changed to 16M 3rd values. Revision .5 (Feb. 1998) - input leakage Currents (Inputs / DQ) are changed.	OCR Scan	KM48S2020C PC100 44-TS 0P2-400F 44-TSQP2-400R 003b2SB	PDF
tl 0741 Abstract: ic tl 0741 44-TSOP2-400R v6400 Text: Advance Information KM23V64000 E T CMOS MASK ROM 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch ab le organ izatio n 8,3 88,60 8 x 8(b yte m ode) 4 ,1 9 4 ,3 0 4 x 16(w ord m ode) Fast access tim e 3.3V O pe ra tion : 120ns(m ax.)	OCR Scan	KM23V64000 64M-Bit /4Mx16) 120ns 150ns 44-TS 0P2-400F 44-TSOP2-400R 003b2SB tl 0741 ic tl 0741 44-TSOP2-400R v6400	PDF
tl 0741 Abstract: ic tl 0741 Text: KM23C16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Sw itchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16(word mode) • Fast access tim e : 100ns(M ax.) • Supply voltage : single +5V • Current consumption	OCR Scan	KM23C16000C 16M-Bit /1Mx16) 100ns 16000C 44-TSQP2-400 23C16000C 152x8 576x16 44-TS tl 0741 ic tl 0741	PDF
Untitled Abstract: No abstract text available Text: Preliminary KM23V16000C E T CMOS MASK ROM 16M-Bit (2Mx8 /1Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES T he K M 2 3 V 1 6 0 0 0 C (E )T is a fu lly static m ask pro gra m m a ble S w itch a b le organ izatio n 2,0 97,15 2 x 8 (b yte m ode) 1,048,576 x 1 6(w ord m ode)	OCR Scan	KM23V16000C 16M-Bit /1Mx16) 120ns 150ns 30/25m 44-TS 0P2-400F 44-TSOP2-400R 003b2SB	PDF