Untitled
Abstract: No abstract text available
Text: MV1817 HEADQUARTERS OPERATIONS GEC PLESSEY SEMICONDUCTORS Cheney Manor, Swindon, Wiltshire United Kingdom SN2 2QW. Tel: 01793 518000 Fax: (01793) 518411 GEC PLESSEY SEMICONDUCTORS P.O. Box 660017 1500 Green Hills Road, Scotts Valley, California 95067–0017,
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MV1817
MV1815
MV1817â
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HEX2000
Abstract: tms320f2812 program example SPRU078 SPRU095 SPRU513 tms320f2812 spi TMS320F2812 code composer studio SPRC125 tms320f2812 cpu code composer studio TMS320F2812
Text: Application Report SPRAAQ2 – October 2007 TMS320F281x Boot ROM Serial Flash Programming Jeff Stafford. ABSTRACT This application report describes the implementation of TI’s Flash application program
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TMS320F281x
HEX2000
tms320f2812 program example
SPRU078
SPRU095
SPRU513
tms320f2812 spi
TMS320F2812 code composer studio
SPRC125
tms320f2812 cpu code composer studio
TMS320F2812
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BUK481-100A
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'ìE D • 1^53^31 003D721 'ìlO M A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic envelope suitable for surface mount applications.
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3D721
BUK481-100A
OT223
-ID/100
003072b
BUK481
-100A
OT223.
BUK481-100A
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k553 transistor
Abstract: K553 K-553 BUK553-100A BUK553-100B T0220AB transistor t buk553
Text: N AUER PHILIPS/DISCRETE b^E D • bbSa^l 003D7^S Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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003D7
K553-1OOA/B
BUK553
-100B
k553 transistor
K553
K-553
BUK553-100A
BUK553-100B
T0220AB
transistor t
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28F010
Abstract: AM28F010 AMD 478 socket pinout
Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption
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G030715
T-46-13-27
Am28F010
-32-Pin
32-Pin
100mA
Am28F010-95C4JC
Am28F010-95C3JC
28F010
AMD 478 socket pinout
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PDF
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Untitled
Abstract: No abstract text available
Text: KS6034C CMOS ELECTRONICS INTRODUCTION KS6034C is a single chip CMOS LSI for data bank with clock, calculator and phone number memory functions. FUNCTION - 3 operating modes available : telephone mode, calculator mode, clock mode 1 Telephone mode • Stores up to 20 items (1 item : 7 characters for
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KS6034C
KS6034C
KS6034Câ
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PDF
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Untitled
Abstract: No abstract text available
Text: N AUER PHI LIP S/ DIS CR ETE bRE D • bbS3R31 0D30727 33R « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.
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OCR Scan
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bbS3R31
0D30727
OT223
BUK482-60A
QD3D731
bb53T31
D03D732
OT223.
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PDF
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Untitled
Abstract: No abstract text available
Text: Card Edge Connectors Board-to-Board, Wire-to-Board Catalog 82619 A ' f r i t ! 4 i '13 0 Revised 8-96 Crimp Snap Twin Leaf Connectors Product Facts • Crimp snap-in, solder eye let, .025 [0.64] square posted and right angle contacts on .100 [2.54], .125 [3.18] or .156 [3.96]
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G16-28
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BUK551-100A
Abstract: BUK551-100B T0220AB
Text: N AMFR P H I L I P S / D I S C R E T E bTE D • ^53^31 QQ3D77S QT1 ■ APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fleld-effect power transistor in a plastic envelope.
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BUK551-100A/B
T0220AB
BUK551
-100A
-100B
BUK551-100A
BUK551-100B
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Untitled
Abstract: No abstract text available
Text: GEC PLESSEY SI M ! PRELIMINARY INFORMATION O N D I NWK938 155 Mb/s ATM TWISTED PAIR PHY/PMD TRANSCEIVER DEVICE WITH CLOCK RECOVERY The NWK938 is a Physical Medium Dependent device designed to operate at 155 Mb/s over category 5 unshielded or shielded twisted pair cable using the ATM Forum
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NWK938
NWK938
52Mb/s
155Mb/s
37bfi522
28-LEAD
52-LEAD
37bfiS22
44-LEAD
37bfl522
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PDF
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY SI Mit PRELIMINARY INFORMATION O N I> l M V 1 8 1 7 SINGLE CHIP TELETEXT DECODER FOR 625 LINE OPERATION The MV1817 Television Data Service, TDS, IC incorporates all the features of the MV1815 with identical registers, so that MV1815 register control is software
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MV1817
MV1815
MV1815.
37bfl
QD20TDb
MV1817
43-24ps
59-7ps
12-lps
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31325
Abstract: 313136
Text: AMP Catalog 82619 Card Edge Connectors Board-to-Board, Wire-to-Board Revised 8-96 Linear Z I F Connectors Product Facts Linear Z I F Connectors • M inim izes force needed to install and rem ove printed circuit boards ■ Availa ble in lever and bell crank styles
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003073b
31325
313136
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PDF
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Untitled
Abstract: No abstract text available
Text: M7E D • «E3Sb05 0D3Db70 □ »SIEG SAB 8088 SIEMENS AKTIENGESELLSCHAF 8-Bit Microprocessor “ Preliminary SAB 8088 5 MHz SAB 8088-2 8 MHz SAB 8088-1 • 8-bit data bus interface • 16-bit internal architecture • Direct addressing capability to 1 M byte o f m em ory
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16-bit
14-word
235b05
003D7DÃ
SAB8088
8088-P
Q67120-C106
P-DIP-40)
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PDF
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K545
Abstract: No abstract text available
Text: N AI1ER PHILIPS/DISCRETE b 'lE I> bb53R31 DD3D7bS 14E « A P X Product Specification Philips Semiconductors BU K545-1OOA/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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bb53R31
K545-1OOA/B
PINNING-SOT186
BUK545
003D7bS
BUK545-100A/B
K545
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY S L M \ C O I i; t. T O K ADVANCE INFORMATION i MV1817 SINGLE CHIP TELETEXT DECODER FOR 625 LINE OPERATION Supersedes version in April 1994 Consumer 1C Handbook, HB312 0 -2 .0 ) The MV1817 Television Data Service, TDS, IC incorporates all the features of the MV1815 with identical
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MV1817
HB312
MV1817
MV1815
MV1815.
12-1jjs
59-7ps
37bfi522
DD25325
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PDF
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pal 003a
Abstract: V1817 GEC 44 3A teletext sub-code SCS30 SCR30
Text: S i GEC PLESSEY M V1817 SINGLE CHIP TELETEXT DECODER FOR 625 LINE OPERATION Supersedes version in April 1994 Consumer 1C Handbook, HB3120—2.0 T he M V1817 Television D ata Service, TD S, 1C incorporates all the features o1 th e M V1815 w ith identical
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V1817
HB3120--
V1817
V1815
MV1815.
MV1817
pal 003a
GEC 44 3A
teletext sub-code
SCS30
SCR30
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PDF
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only DESCRIPTION The INA131 is a low cost, general purpose G = 100 instrumentation amplifier offering excellent accuracy. Its 3-op amp design and small size make it ideal for a wide range of applications. • LOW DRIFT: 0.25nV/°C max
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INA131
25nV/Â
110dB
SOL-16
REF200
INA131.
17313hS
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PDF
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Burr-Brown 4206
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson BU RR-BROW N E PGA204 PGA205 3 Programmable Gain INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION • DIGITALLY PROGRAMMABLE GAIN: PGA204: G=1, 10, 100, 1000V/V PGA205: G=1, 2, 4, 8V/V The PGA204 and PGA205 are low cost, general pur
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PGA204
PGA205
PGA204:
000V/V
PGA205:
PGA204
PGA205
PGA204â
PGA205â
Burr-Brown 4206
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PDF
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TDA 4706
Abstract: qml-38535 CDFP2-F14 CQCC1-N20
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REVSTATUS OF SHEETS PMIC N/A REV SHEET 1 2 3 4 5 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD M IC R O C IR C U IT D R A W IN G THIS DRAWING IS AVAILABLE
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5962-E218-97
TDA 4706
qml-38535
CDFP2-F14
CQCC1-N20
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PDF
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D0307
Abstract: marking a007 vqe 24 er 2N5927 marking JTs US ARMY TRANSISTOR CROSS
Text: □ 00 MIL SPECS • 0000125 0030751 fl ■ MILS MIL -S-19500/440A ER 10 June 1991 SUPERSEDING MIL -S-19500/440(ER) 17 November 1970 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPE 2N5927, JANTX AND JANTXV This specification is approved for use by US Army Laboratory
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MIL-S-19500/440A
MIL-S-19500/440(
2N5927,
MIL-S-19500.
5961-A007)
D0307
marking a007
vqe 24 er
2N5927
marking JTs
US ARMY TRANSISTOR CROSS
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHIL IPS /DI SCRE TE bTE D m bbS3T31 DD3D7SD 711 W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK543-60A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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OCR Scan
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bbS3T31
BUK543-60A/B
PINNING-SOT186
BUK543
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PDF
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-800-548-6132 USA Only • BUFFERED GUARD DRIVE PINS • LOW OFFSET VOLTAGE: 2mV max • HIGH COMMON-MODE REJECTION: 84dB (G = 10) • LOW QUIESCENT CURRENT: 1mA • INPUT OVER-VOLTAGE PROTECTION: +40V APPLICATIONS • LABORATORY INSTRUMENTATION
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INA116
16-pin
SOL-16
INA116
17313bS
1307ab
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D bbS3T31 DD3D7DD 1Tb BIAPX Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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OCR Scan
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bbS3T31
O220AB
BUK457-400B
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PDF
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • bb53T31 CI030745 3S4 * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK542-100A/B Logic level FET_ _ GENERAL DESCRIPTION N -channel enhancem ent mode
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OCR Scan
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bb53T31
CI030745
BUK542-100A/B
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PDF
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