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    XP 215 hitachi

    Abstract: No abstract text available
    Text: HITACHI/ OPTOELECTRONICS SHE D • MMTbSDS 0012071 3TT ■ H L 8 3 1 4 E /G _GaAIAs LD Description *4 (~ C & The HL8314E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment


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    PDF HL8314E/G HL8314E/G 44Tb205 0012D74 T-41-05 XP 215 hitachi