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    957b

    Abstract: ic 957B 1N9718 957B 62 964b
    Text: 1 N 957B , thru 1 N 992B , -1 DO-35 Microsemi Corp. ' T h e àxxMs expert* S C O T T S D A L E , A7. For more informatkm caìl: 602 941-6300 FEATURES SIU C O N 500 mW ZENER DIO DES • 6.8 TO 200 V ZEN ER VOLTAGE RANGE • 1 N962B-1 THRU 1 N992B-I AVAILABLE IN JA N , JA N T X AND JA N T X V QUALIFICATIONS


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    DO-35 N962B-1 N992B-I MIL-S-19500/117. 00037bfl 957b ic 957B 1N9718 957B 62 964b PDF

    Untitled

    Abstract: No abstract text available
    Text: H Y 6 2 V 8 1 0 0 A S e r ie s 128Kx8-blt CMOS SRAM »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131,072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that


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    128Kx8-blt HY62V8100A 55/70/85/100ns 100/120/150/200ns 1DD04-11-MAY94 GG3773 HY62V8100ALP PDF

    NTE7493A

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE7485, 16-Lead DIP, See Diag. 249 NTE74LS85, NTE74S85 4-B it Magnitude Comparator B3 Data Input Q NTE74C85 16-Lead DIP, See Diag. 249 4 -B it Magnitude Comparator VCc Input B2 Q vcc Cascade Input A < B


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    NTE7485, 16-Lead NTE74LS85, NTE74S85 NTE74C85 NTE7486, NTE74HC86 14-Lead NTE74LS86, NTE7493A PDF