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    0.35 UM CMOS GATE AREA Search Results

    0.35 UM CMOS GATE AREA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation

    0.35 UM CMOS GATE AREA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0.35Um 1P4M

    Abstract: nmos transistor 0.35 um
    Text: 0.35um 1P4M Logic 3.3V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel Buried Channel PMOS


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    2P4M P 82

    Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
    Text: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um


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    TRANSISTOR 545

    Abstract: No abstract text available
    Text: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel


    Original     		PDF

    UM 66 datasheet

    Abstract: UM 66 in
    Text: 0.22um 1P5M Logic 2.5V /3.3V updated in 2005.03.21 Features ƒ ƒ ƒ ƒ Vdd Core/IO Well Isolation Transistor Channel Gate Oxide Gate Material LDD & Source/Drain ƒ Metallization Barrier Metal Metal Stacked Via ƒ Lithography ƒ Speed (nsec/gate) 2.5V/3.3V


    Original     		PDF 27um2 32um2 UM 66 datasheet UM 66 in

    Untitled

    Abstract: No abstract text available
    Text: 0.25um 2P5M Mixed Signal 2.5V / 3.3V updated in Oct 01, 2004 Features ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Vdd Core/IO Starting Material Well Isolation Transistor Gate Length (Ldrawn) Channel Gate Oxide Gate Material LDD & Source/Drain Inter-Layer-Dielectric Metallization


    Original     		PDF 32um2 36um2 30um2 100um2

    PD71055

    Abstract: CMOS-9HD LSI CMOS GATE ARRAY uPD71054 PD71051 PD71054 CMOS8 ea-9hd
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF G0706 PD71055 CMOS-9HD LSI CMOS GATE ARRAY uPD71054 PD71051 PD71054 CMOS8 ea-9hd

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Text: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


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    TUNABLE VCO 10GHZ

    Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer
    Text: A 10GHz CMOS Distributed Voltage Controlled Oscillator1 Hui Wu and Ali Hajimiri Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA Abstract A 10 GHz CMOS distributed voltage controlled oscillator DVCO is designed in a 0.35µm BiCMOS process technology using only CMOS transistors. The oscillator achieves a


    Original     		PDF 10GHz TUNABLE VCO 10GHZ MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer

    MOS RM3

    Abstract: No abstract text available
    Text: 0.35 µm CMOS Process Family XO035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron Modular CMOS Technology For Fast Optical Applications Description XO035 is X-FAB’s specialized process for optoelectronic and high speed RF applications. It is especially suited for applications needing


    Original     		PDF XO035 XO035 35-micron MOS RM3

    Untitled

    Abstract: No abstract text available
    Text: 0.35 m Process Family: XA035 0.35 Micron High Temperature Modular CMOS Technology DESCRIPTION The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and Industrial products with temperature range up to


    Original     		PDF XA035 XA035 35-micron

    nmos transistor 0.35 um

    Abstract: P854 "vlsi technology" abstract for intel gelato FEM95 20VOLTS his 06 P856
    Text: Intel’s 0.25 Micron, 2.0Volts Logic Process Technology A. Brand, A. Haranahalli, N. Hsieh, Y.C. Lin, G. Sery, N. Stenton, B.J. Woo California Technology and Manufacturing Group, Intel Corp. S Ahmed, M. Bohr, S. Thompson, S. Yang Portland Technology Development Group, Intel Corp.


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    tsmc 0.35um 2p4m cmos

    Abstract: K2411 specification of scr 2p4m teradyne j750 tester manual 2p4m equivalent Z0853006PSC SCR 2P4M Z84C1510FEC DC04 display Z0853006VSC
    Text: Quality And Reliability Report 2004 Period Covered: 2003


    Original     		PDF DC04-0001 tsmc 0.35um 2p4m cmos K2411 specification of scr 2p4m teradyne j750 tester manual 2p4m equivalent Z0853006PSC SCR 2P4M Z84C1510FEC DC04 display Z0853006VSC

    DNDA

    Abstract: No abstract text available
    Text: 1.0 m Process Family: XDH10 Modular 1.0μm 650V Trench Insulated BCD Process DESCRIPTION XDH10 is X-Fab´s dielectric trench insulated smart power technology. Main target applications are analog switch ICs, driver ICs for capacitive, inductive and resistive loads and EL / piezo driver ICs for


    Original     		PDF XDH10 XDH10 DNDA

    Untitled

    Abstract: No abstract text available
    Text: Quality control & Inspection ZERO DEFECT FOR PRODUCTION THAT NEVER FAILS! Customer satisfaction highly depends on the quality of the finished goods or the performance of the machine in use. Zero defect during production is a key criterion for success. The speed of production lines is getting increasingly


    Original     		PDF IEC60529 RS-232C

    HBT 01 - 05

    Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
    Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna


    Original     		PDF 90GHz, 90GHz HBT 01 - 05 dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G

    design an 8 Bit ALU using VHDL software tools -FP

    Abstract: AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K
    Text: Cell-Based IC Features • • • • • • • Integration of all the elements of a complex electronic system on a single IC. Memory compilers for: RAM, dual-port RAM, ROM, EEPROM and FLASH. Microcontroller and DSP cores: including ARM7TDMITM ARM Thumb , 8051TM ,


    Original     		PDF 8051TM 10Kx16-bit design an 8 Bit ALU using VHDL software tools -FP AOI221 atmel 0928 OAI221 MX 0541 or03d1 ECPD07 atmel 0532 8 bit barrel shifter vhdl code AT56K

    transistor bL P09

    Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
    Text: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its


    OCR Scan     		PDF MB62XXXX MB60XXXX T-160P F160001S-2C 40-LEAD OIP-40P-M U1M1T60 D40008S-1Ç transistor bL P09 MB625xxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU UHB SERIES 1.5p CMOS GATE ARRAYS MB62XXXX MB60XXXX Septem ber 1988 Edition 1.1 DESCRIPTION The UHB series o f 1 .5-m icron CMOS gate arrays Is a highly Integrated low -pow er, ultra high-speed product fam ily th a t derives its enhanced perform ance and increased user flexibility fro m the use of a system -proven, dual-colum n gate s tru ctu re and 2-layer


    OCR Scan     		PDF MB62XXXX MB60XXXX FPT-160PM01) 40-LEAD DIP-40P-M01) 54JTYP 40006S-1C

    quad p-CHANNEL

    Abstract: No abstract text available
    Text: O ctober 1987 Revised Ja nuary 1999 S E M I C O N D U C T O R TM General Description tpHL = tpLH = 40 ns typ. at C L = 15 pF, 10V supply The C D 4030C E X C LU SIVE-O R gates are m onolithic com ­ plem entary M OS (CMOS) integrated circuits constructed


    OCR Scan     		PDF CD4030C CD4030C 4030C quad p-CHANNEL

    D4030C

    Abstract: No abstract text available
    Text: Revised January 1999 EMICQNDUCTGR tm General Description tpHL = tp m = 40 ns typ. at C L = 15 pF, 10V supply The C D 4030C EXC LU SIVE-O R gates are m onolithic com ­ plem entary MOS (CMOS) integrated circuits constructed w ith N- and P-channel e nhancem ent m ode transistors. All


    OCR Scan     		PDF CD4030C CD4030C 4030C D4030C

    uPD65801

    Abstract: uPD65800 UPD65804
    Text: CMOS-8 5-VOLT, 0.6-MICRON CMOS GATE ARRAYS NEC NEC Electronics Inc. August 1995 Figure 1. Sample CMOS-8 Packages Description NEC’s 5-volt CMOS-8 family are high performance, sub­ micron gate arrays, targeted for applications requiring e xtensive in te g ra tio n and high speeds. The device


    OCR Scan     		PDF H27SSS uPD65801 uPD65800 UPD65804

    rca 711

    Abstract: No abstract text available
    Text: HARRIS SEflICOND SECTOR 37E D M3G2271 D0ES37G Technical D ata- -T-43-2V CD54/74AC02 CD54/74ACT02 <a 8 in 3 = 1 » 5 2B——= 3A-30 « " r >>- ' IY 1 •¡HAS Advance Information Quad 2-Input NOR Gate — 2Y 10 it - d GND*7


    OCR Scan     		PDF M3G2271 D0ES37G CD54/74AC02 CD54/74ACT02 -T-43-2V CD54/74ACT02 CD74AC02 CD74ACT02 14-lead, rca 711

    AD517

    Abstract: No abstract text available
    Text: LOGDAC CMOS Logarithmic D/A Converter AD7118* ANALOG DEVICES □ FEATURES Dynamic Range 85.5dB Resolution 1.5dB Full ±25V Input Range Multiplying DAC Full Military Temperature Range -5 5°C to +125°C Low Distortion Low Power Consumption Latch Proof Operation Schottky Diodes Not Required


    OCR Scan     		PDF AD7118* AD7118 D7118 AD7118-- AD517

    Untitled

    Abstract: No abstract text available
    Text: 5V, 5V Low Dropout Dual Regulator with RESET/ENABLE Description The CS-8135 is a low dropout, high current, dual 5V linear regulator. The secondary 5V/10mA output is often used for powering systems with stand­ by memory. Quiescent current drain is less than 3mA when supplying 10mA


    OCR Scan     		PDF CS-8135 V/10mA CS-8135 500mA CS-8135T5 CS-8135TV5 CS-8135TH5 T0-220