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HiPerF ETTM Power MOSFETs
g
?D
UE D f As
N-Channel Enhancement-Mode with Fast Intrinsic Diode
Type ® V
DSS
V 70
^D(cont)
Tc = 25°C A 76 ® 67 75 42 50 58 35 40 13 21 24 26
D
DS