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    DSAE0046267.pdf by NEC

    • MOS MOS Integrated Circuit PD444016 4M CMOS RAM 256K ×16 PD444016 4,194,304 262,144 ×16 CMOS RAM 5.0 V ± 0.5 V 44 SOJ 44 TSOP 262,144 ×16 8, 10, 12 ns (MAX.)
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    PD444016-8
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