This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
SAMSUNG SEMICONDUCTOR INC 11£ 0 fe 711,4142 0007704 5
NPN EPITAXIAL MJE700/701/702/703 SILICON DARLINGTON TRANSISTOR
HIGH DC CURRENT GAIN MIN hFEâ750 @ IC--1.5 and -2.0A DC MONOLITHIC CONSTRUC