This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
IRF630S
Power MOSFET
VDSS = 200V, RDS(on) = 0.40 ohm, ID = 9.0 A
D
G
S
N Channel
ELECTRICAL CHARACTERISICS at
Parameter
Tj = 25 C Maximum. Unless stated Otherwise
Drain to Source L
