DSA00153410.pdf by Cree

Partial File Text CGH35060F1 / CGH35060P1 60 W, 3.3-3.9 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree's CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifical
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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