transistor NEC D 587
Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Text: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage
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2SC4885
transistor NEC D 587
transistor NEC D 986
R13* MARKING
TC-2365
marking R13
2SC4885
741 vtvm
230 624 533 392
P10410EJ2V0DS00
transistor NEC D 586
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sky65116
Abstract: NMT450 uhf linear amplifier module TW14-D621 TAJA106M GSM450 GSM480 TAJA106M006R NMT-450 t 430 nf 65 nf 06
Text: data sheet SKY65116: 390–500 MHz Linear Power Amplifier Features W ideband frequency operation: 390–500 MHz High linearity: OIP3 43 dBm l High efficiency: 40% PAE l High gain: 35 dB l P 1 dB = 32.5 dBm l Single DC supply: 3.6 V l Internal RF match and bias circuits
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SKY65116:
GSM450
GSM480
NMT450
12-pin
J-STD-020
SKY65116
NMT450
uhf linear amplifier module
TW14-D621
TAJA106M
GSM480
TAJA106M006R
NMT-450
t 430 nf 65 nf 06
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SKY65116: 390–500 MHz Linear Power Amplifier Features Widebandfrequencyoperation:390–500MHz Highlinearity:OIP343dBm lHighefficiency:40%PAE lHighgain:35dB lP 1dB=32.5dBm
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SKY65116:
12-pinà
J-STD-020
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BGA420
Abstract: EHA07385
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA Noise figure NF = 2.3 dB at 1.8 GHz 1 Reverse isolation > 28 dB and
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BGA420
25-Technologie
VPS05605
EHA07385
OT343
Jan-29-2002
BGA420
EHA07385
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63 1826 0306
Abstract: zo 103 ma 2SC5702 DSA003640
Text: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator ADE-208-1414 Z 1st. Edition Mar. 2001 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz
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2SC5702
ADE-208-1414
63 1826 0306
zo 103 ma
2SC5702
DSA003640
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R07DS0095EJ0800
Abstract: No abstract text available
Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz Small outline package (WSON0504-2: 5.0 4.0 0.8 mm)
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RQA0011DNS
R07DS0095EJ0800
WSON0504-2:
PWSN0002ZA-B
WSON0504-2>
RQA0011â
R07DS0095EJ0800
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RQA0011
Abstract: RQA0011DNS RQA0004 R07DS0095EJ0800 PG890 RQA0011DNSTB-E
Text: Preliminary Datasheet RQA0011DNS R07DS0095EJ0800 Rev.8.00 May 11, 2012 Silicon N-Channel MOS FET Features • High output power, High gain, High efficiency Pout = +40.2 dBm, Linear gain = 22.5 dB, PAE = 70% f = 520 MHz Small outline package (WSON0504-2: 5.0 4.0 0.8 mm)
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RQA0011DNS
WSON0504-2:
R07DS0095EJ0800
PWSN0002ZA-B
WSON0504-2>
RQA0011"
RQA0011
RQA0011DNS
RQA0004
PG890
RQA0011DNSTB-E
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BGA 420
Abstract: 37265
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA Noise figure NF = 2.3 dB at 1.8 GHz 1 Reverse isolation > 28 dB and
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BGA420
25-Technologie
VPS05605
EHA07385
OT343
BGA 420
37265
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63 1826 0306
Abstract: Ka 2535 data sheet zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Text: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz
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2SC5702
REJ03G0752-0200
ADE-208-1414)
PUSF0003ZA-A
63 1826 0306
Ka 2535 data sheet
zo 103 ma
2SC5702
2SC5702ZS-TL-E
PUSF0003ZA-A
SC-89
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1128 marking
Abstract: 63 1826 0306 zo 103 ma 2SC5702 2SC5702ZS-TL-E PUSF0003ZA-A SC-89
Text: 2SC5702 Silicon NPN Epitaxial High Frequency Amplifier / Oscillator REJ03G0752-0200 Previous ADE-208-1414 Rev.2.00 Aug.10.2005 Features • High gain bandwidth product fT = 8 GHz typ. • High power gain and low noise figure ; PG = 13 dB typ., NF = 1.05 dB typ. at f = 900 MHz
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2SC5702
REJ03G0752-0200
ADE-208-1414)
PUSF0003ZA-A
1128 marking
63 1826 0306
zo 103 ma
2SC5702
2SC5702ZS-TL-E
PUSF0003ZA-A
SC-89
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BGA420
Abstract: E6327
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie 3 Cascadable 50 -gain block 4 Unconditionally stable Gain |S21|2 = 13 dB at 1.8 GHz IP3out = +13 dBm at 1.8 GHz 2 VD = 3 V, ID = typ. 6.7 mA Noise figure NF = 2.3 dB at 1.8 GHz 1 Reverse isolation > 28 dB and
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BGA420
25-Technologie
VPS05605
EHA07385
OT343
BGA420
E6327
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Untitled
Abstract: No abstract text available
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD
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BGA420
25-Technologie
EHA07385
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INFINEON marking BGA
Abstract: BGA420 t501
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block • Unconditionally stable 3 2 4 • Gain |S21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz V D = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.3 dB at 1.8 GHz VD
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BGA420
25-Technologie
EHA07385
OT343
INFINEON marking BGA
BGA420
t501
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Untitled
Abstract: No abstract text available
Text: BGA420 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable 2 4 • Gain |S 21|2 = 13 dB at 1.8 GHz 1 IP3out = +13 dBm at 1.8 GHz VD = 3 V, ID = typ. 6.7 mA • Noise figure NF = 2.2 dB at 1.8 GHz VD
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BGA420
25-Technologie
EHA07385
OT343
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 0, 1/2004 Gallium Arsenide CATV Amplifier Module MHW8207A Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection
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MHW8207A
CSO112
CSO79
XMD112
XMD79
CTB112
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 0, 12/2003 Gallium Arsenide CATV Amplifier Module MHW8227A Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection
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CSO112
CSO79
XMD112
XMD79
CTB112
CTB79
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 0, 1/2004 Gallium Arsenide CATV Amplifier Module MHW8267A Features • Specified for 79 - and 112 - Channel Loading • Excellent Distortion Performance • Higher Output Capability • Built - in Input Diode Protection
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MHW8267A
MHW8267A
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20-PIN
Abstract: ICS853013 MC100EL13 MC100LVEL13 MS-013
Text: ICS853013 Integrated Circuit Systems, Inc. LOW SKEW, DUAL, 1-TO-3, DIFFERENTIAL-TO2.5V/3.3V/5V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853013 is a low skew, high performance dual 1-to-3 Differential-to-2.5V/3.3V/5V LVPECL/ HiPerClockS
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ICS853013
ICS853013
853013AM
20-PIN
MC100EL13
MC100LVEL13
MS-013
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Untitled
Abstract: No abstract text available
Text: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this
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MMRF1021N
MMRF1021NT1
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Amplifier Module MHW9187 Features • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability GaAs FET Transistor Technology
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132-Channel
MHW9187
CSO132
CSO112
CSO79
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line Gallium Arsenide CATV Amplifier Module MHW9267 Features • • • • • • Specified for 79-, 112- and 132-Channel Loading Excellent Distortion Performance Higher Output Capability Built-in Input Diode Protection
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132-Channel
MHW9267
CSO132
CSO112
CSO79
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ICS853013
Abstract: MC100EL13 MC100LVEL13 MS-013 20-PIN
Text: ICS853013 Integrated Circuit Systems, Inc. LOW SKEW, DUAL, 1-TO-3, DIFFERENTIAL-TO2.5V/3.3V/5V LVPECL/ECL FANOUT BUFFER GENERAL DESCRIPTION FEATURES The ICS853013 is a low skew, high performance dual 1-to-3 Differential-to-2.5V/3.3V/5V HiPerClockS LVPECL/ECL Fanout Buffer and a member of
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ICS853013
ICS853013
853013AM
MC100EL13
MC100LVEL13
MS-013
20-PIN
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TC236
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.
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2SC4885
SC-70
CO193
TC236
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TRANSISTOR J 5804 NPN
Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Text: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.
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2SC4885
SC-70
TRANSISTOR J 5804 NPN
nec 2501 LD 229
transistor NEC D 986
NEC 2501 MF 216
nec 2501 LD 325
tfr 586
nec 2501 Le 629
CD 1691 CB
MC 151 transistor
567/triac ZO 410 MF
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