Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diodes in Hermetic Surface Mount Package Hermetic Ceramic Package Features ● ● ● ● ● ● ● ● Medium, low and ZBD barrier heights available Hermetic ceramic package, 1.83 x 1.43 x 1.0 mm Very low parasitic impedance
|
Original
|
J-STD-020
|
PDF
|
UG-383
Abstract: WR6 DIODE ZBD-06 UG-387 ZBD 10 WR19 UG599 UG383 UG-383/U waveguide ZBD-28
Text: Zero-Biased Detectors, 26.5 to 170 GHz ZBD-Series Zero-biased Detectors, 26.5 to 170 GHz. Typical Ka-band sensitivity 3,500 mV/mW. Specifications MODEL NUMBER Frequency Range GHz Input Waveguide Waveguide Flange Typical Video Sensitivity at –20 dBm Input
|
Original
|
ZBD-28
ZBD-22
UG-599/U
UG-383/U
ZBD-19
UG383/U-M
ZBD-15
UG385/U
ZBD-12
UG387/U
UG-383
WR6 DIODE
ZBD-06
UG-387
ZBD 10
WR19
UG599
UG383
UG-383/U waveguide
ZBD-28
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LXZ1000 SURFACE MOUNT SOT-23 Zero Bias ZBD Schottky Diodes TM RoHS Compliant DESCRIPTION KEY FEATURES This LSX series of devices meets RoHS requirements per EU Directive 2002/95/EC. • Surface Mount design • Wide Selecting of Values and Configurations
|
Original
|
LXZ1000
OT-23
2002/95/EC.
speci-442-5600,
100uA
-30dbm
HSMS2850
|
PDF
|
SMS3922
Abstract: SMS3923 SMS7621 SMS7630
Text: DATA SHEET Silicon Schottky Diodes in Hermetic Surface Mount Package Hermetic Ceramic Package Features ● ● ● ● ● ● ● ● Medium, low and ZBD barrier heights available Hermetic ceramic package, 1.83 x 1.43 x 0.8 mm Very low parasitic impedance
|
Original
|
J-STD-020
SMS3922
SMS3923
SMS7621
SMS7630
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diodes in Hermetic Surface Mount Package Hermetic Ceramic Package Features ● ● ● ● ● ● ● ● Medium, low and ZBD barrier heights available Hermetic ceramic package, 1.83 x 1.43 x 0.8 mm Very low parasitic impedance
|
Original
|
J-STD-020
|
PDF
|
2314 sot-23
Abstract: Sampling Phase Detectors tm 2313 HSMS2850 HSMS2852 LXZ Series LXZ1000 hsms-2850
Text: LXZ1000 SURFACE MOUNT SOT-23 Zero Bias ZBD Schottky Diodes TM RoHS Compliant DESCRIPTION KEY FEATURES This LSX series of devices meets RoHS requirements per EU Directive 2002/95/EC. • Surface Mount design • Wide Selecting of Values and Configurations
|
Original
|
LXZ1000
OT-23
2002/95/EC.
100uA
-30dbm
HSMS2850
HSMS2852
2314 sot-23
Sampling Phase Detectors
tm 2313
HSMS2850
HSMS2852
LXZ Series
LXZ1000
hsms-2850
|
PDF
|
SMS7630-107
Abstract: SMS3922 SMS3923 SMS7621 SMS7630
Text: DATA SHEET Silicon Schottky Diodes in Hermetic Surface Mount Package Features ● ● ● ● ● ● ● ● Medium, low and ZBD barrier heights available Hermetic ceramic package, 1.83 x 1.43 x 1.0 mm Very low parasitic impedance Low thermal impedance Usable as high as 10 GHz
|
Original
|
J-STD-020
SMS7630-107
SMS3922
SMS3923
SMS7621
SMS7630
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diodes in Hermetic Surface Mount Package Hermetic Ceramic Package Features ● ● ● ● ● ● ● ● Medium, low and ZBD barrier heights available Hermetic ceramic package, 1.83 x 1.43 x 1.0 mm Very low parasitic impedance
|
Original
|
J-STD-020
|
PDF
|
gold detector circuit free
Abstract: CDB7619-000 CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000
Text: DATA SHEET Silicon Schottky Diode Chips Applications ● ● Detectors Mixers Features Low capacitance for usage beyond 40 GHz ZBD and low-barrier designs ● P-type and n-type junctions ● Large bond pad chip design ● Lead Pb -free, RoHS-compliant, and Green
|
Original
|
|
PDF
|
CDB7619-000
Abstract: CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000 United Detector silicon diode
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green
|
Original
|
|
PDF
|
CDF7621-000
Abstract: CDB7619-000
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low-barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green
|
Original
|
|
PDF
|
935 schottky diode
Abstract: rf detector diode low power CDB7620-000 CDB7619-000 Alpha Industries
Text: Silicon Schottky Diode Chips Features • For Detector and Mixer Applications ■ Low Capacitance for Usage Beyond 40 GHz ■ ZBD and Low Barrier Designs ■ P-Type and N-Type Junctions ■ Large Bond Pad Chip Design Description In a detector circuit operating at zero bias, depending on
|
Original
|
8/01A
935 schottky diode
rf detector diode low power
CDB7620-000
CDB7619-000
Alpha Industries
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET Silicon Schottky Diode Chips Features For detector and mixer applications Low capacitance for usage beyond 40 GHz ● ZBD and low barrier designs ● P-type and N-type junctions ● Large bond pad chip design ● Available lead Pb -free, RoHS-compliant, and Green MSL-1 @
|
Original
|
J-STD-020
|
PDF
|
CME7660-000
Abstract: CDP7624-207 DDB2504-230 CME7660-207 CDB7620-203 200847C DDB2503-000 DDB2503-230 DDB2503-250 DDB2504-000
Text: DATA SHEET Silicon Schottky Barrier Diodes: Packaged, Bondable Chips and Beam Leads Applications • Detectors • Mixers Features • Available in both P-type and N-type low barrier and ZBD designs • Low 1/f noise • Large bond pad chip design • Planar passivated beam-lead and chip construction
|
Original
|
J-STD-020)
200847C
CME7660-000
CDP7624-207
DDB2504-230
CME7660-207
CDB7620-203
200847C
DDB2503-000
DDB2503-230
DDB2503-250
DDB2504-000
|
PDF
|
gold detector circuit free
Abstract: gold metal detectors metal detector schematic gold detectors circuit CDB7619-000 gold detector circuit drawing free circuits metal detector Surface Mount RF Schottky Barrier Diodes metal detector CDC7630-000
Text: Applications • Mixer and detector Features • Low capacitance for usage beyond 40 GHz • ZBD and low barrier designs • P-type and N-type junctions • Large bond pad chip design • Chip products are Skyworks Green Silicon Schottky Diodes Skyworks broad product portfolio includes Schottky diodes as packaged and bondable
|
Original
|
CDB7619-000,
CDB7620-000,
CDB7630000,
CDB7631-000,
CDB7621-000
CDB7623-000
BRO376-09A
gold detector circuit free
gold metal detectors
metal detector schematic
gold detectors circuit
CDB7619-000
gold detector circuit drawing free
circuits metal detector
Surface Mount RF Schottky Barrier Diodes
metal detector
CDC7630-000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET CDB, CDC, CDF Series: Silicon Schottky Diode Chips Applications • Detectors • Mixers Features • Low capacitance for use beyond 40 GHz • ZBD and low barrier designs • P-type and n-type junctions • Large bond pad chip design • Packages rated MSL1, 260 °C per JEDEC J-STD-020
|
Original
|
J-STD-020)
200139H
|
PDF
|
CDB7619-000
Abstract: CDB7620-000 CDC7630-000 CDC7631-000 CDF7621-000 CDF7623-000
Text: DATA SHEET CDB, CDC, CDF Series: Silicon Schottky Diode Chips Applications x Detectors x Mixers Features x Low capacitance for use beyond 40 GHz x ZBD and low barrier designs x P-type and n-type junctions x Large bond pad chip design x Packages rated MSL1, 260 qC per JEDEC J-STD-020
|
Original
|
J-STD-020)
200139G
CDB7619-000
CDB7620-000
CDC7630-000
CDC7631-000
CDF7621-000
CDF7623-000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DATA SHEET CDB, CDC, CDF Series: Silicon Schottky Diode Chips Applications • Detectors • Mixers Features • Low capacitance for use beyond 40 GHz • ZBD and low barrier designs • P-type and n-type junctions • Large bond pad chip design • Packages rated MSL1, 260 °C per JEDEC J-STD-020
|
Original
|
J-STD-020)
200139H
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY Gallium Arsenide Planar Doped Barrier PDB Zero Bias Detector Diodes (0.5 to 60GHz) * Features • ■ ■ ■ ■ ■ ■ High RF Pulsed Burnout High ESD Threshold Low “ M f ” Noise Excellent Temperature Stability, Better than Silicon Schottky ZBD’s
|
OCR Scan
|
60GHz)
30dBm
100ohm
10MHz
|
PDF
|
Diode BA 163
Abstract: No abstract text available
Text: Zero Bias Detector Diodes Features • CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS AND BEAM LEADS Applications This family of Zero Bias Detector ZBD diodes is designed
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: m o SOURIAU an FCI Company style F plugs, 3 row series style F male number of contacts termination style - angled spill 32 - 48 plating 54 standard - DIN class 2 - DIN class 1 rows loaded - zbd (48 contacts) 110 - zb- (32 contacts) 101 - z-d (32 contacts)
|
OCR Scan
|
3437c
0002bl5
34378kfl
0002b2b
|
PDF
|
MA4E931D
Abstract: Detectors - Diode ODS-990 MA4E932C ma4e928
Text: Zero Bias Detector Diodes Features • CAN BE USED WITHOUT EXTERNAL DC BIAS ■ EXHIBIT UNIFORM Rv CHARACTERISTICS ■ HIGH VOLTAGE SENSITIVITY ■ AVAILABLE IN PACKAGES, CHIPS AND BEAM LEADS Description Applications This fam ily of Zero Bias D etector ZBD diodes is designed
|
OCR Scan
|
|
PDF
|