Untitled
Abstract: No abstract text available
Text: Surface Mount Zener Diodes 350mW Zener Voltage @ IZT Marking Code Part No. MMBZ4695 MMBZ4696 MMBZ4697 MMBZ4698 MMBZ4699 MMBZ4700 MMBZ4701 MMBZ4702 MMBZ4703 MMBZ4704 MMBZ4705 MMBZ4706 MMBZ4707 MMBZ4708 MMBZ4709 MMBZ4710 MMBZ4711 MMBZ4712 MMBZ4713 MMBZ4714 MMBZ4715
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350mW
MMBZ4617
MMBZ4618
MMBZ4619
MMBZ4620
MMBZ4621
MMBZ4622
MMBZ4623
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Untitled
Abstract: No abstract text available
Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality
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TQM8M9074
20-pin
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TQM8M9074
Abstract: Z11 Marking Code
Text: TQM8M9074 ½ W High Linearity Variable Gain Amplifier Applications 2G / 3G / 4G Wireless Infrastructure LTE / WCDMA / CDMA / EDGE General Purpose Wireless 20-pin 5x5mm leadless package Product Features Functional Block Diagram Integrates Amp + VVA + Amp functionality
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TQM8M9074
20-pin
TQM8M9074
Z11 Marking Code
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smd j3y
Abstract: SOT89 MARKING CODE SMD MARKING CODE j3y SOT-23 J3Y j3y smd smd code marking wl sot23 k72 sot-23 marking f5 sot-89 smd 2TY SOT-23 MARKING ka6
Text: Micro Commercial Components Corp. Marking Code For MCC's SMD Devices PN# 1N4148W 1N4148WX 1N4148X 1N4448W 1N4448WX 1N4448X 1N914W 1SS181 1SS184 1SS193 1SS226 1SS355 1SS357 1SS389 1SS400 1SS404 2N7002 2N7002DW 2SA1037-Q 2SA1037-R 2SA1037-S 2SA1162-GR 2SA1162-O
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1N4148W
1N4148WX
1N4148X
1N4448W
1N4448WX
1N4448X
1N914W
1SS181
1SS184
1SS193
smd j3y
SOT89 MARKING CODE
SMD MARKING CODE j3y
SOT-23 J3Y
j3y smd
smd code marking wl sot23
k72 sot-23
marking f5 sot-89
smd 2TY
SOT-23 MARKING ka6
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transistor MARKING NC KRC
Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09130E
Hz--960
AGR09130E
AGR09130EU
AGR09130EF
transistor MARKING NC KRC
MARKING CODE c26
AGR09130EF
AGR09130EU
JESD22-C101A
amplifier copy machine
100B1R5BW
MOSFET marking Z4
marking code ACP
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ATC100A101JP150
Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
DataMRFG35010AN
ATC100A101JP150
GT5040
MRFG35010ANT1
ATC100B101JP500XT
080514R7BBS
ATC100A100JP150X
ATC100A101JP150XT
Transistor Z14
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Z921
Abstract: transistor MARKING NC KRC MOSFET 930 06 ng
Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple
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AGR09130E
Hz--960
AGR09130EU
AGR09130EF
Z921
transistor MARKING NC KRC
MOSFET 930 06 ng
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BZX84 X8
Abstract: SOT-23 marking E9 Zener Diode SOT-23 marking x8 zener diode n8 BZX84C47 A9 SOT-23 zener y4 H8 SOT-23 marking zener Z9 ZENER C3V3
Text: BZX84C2V4 . BZX84C47 300 mW BZX84C2V4 . BZX84C47 (300 mW) Surface mount Silicon Planar Zener Diodes Silizium-Planar-Zener-Dioden für die Oberflächenmontage Version 2009-01-28 1.1 2.9 ±0.1 0.4 2.5 ±0.1 1.3 max 3 Type Code 300 mW Repetitive peak reverse voltage
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BZX84C2V4
BZX84C47
OT-23
O-236)
UL94V-0
Y14/Z9
Y15/A0
Y16/B0
BZX84 X8
SOT-23 marking E9
Zener Diode SOT-23 marking x8
zener diode n8
BZX84C47
A9 SOT-23
zener y4
H8 SOT-23
marking zener Z9
ZENER C3V3
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Untitled
Abstract: No abstract text available
Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications • Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features Functional Block Diagram
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TQM8M9079
20-pin
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Z11 Marking Code
Abstract: No abstract text available
Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications • Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features Functional Block Diagram
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TQM8M9079
20-pin
TQM8M9079
Z11 Marking Code
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Z11 Marking Code
Abstract: No abstract text available
Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications • Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features Functional Block Diagram
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TQM8M9079
20-pin
TQM8M9079
Z11 Marking Code
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ZENER DIODE z91
Abstract: Willas Z68 diode Z47 z39 marking DIODE z91
Text: WILLAS ZS4728A THRU ZS4764A 1WATT SURFACE MOUNT ZENER DIODE SMA-LS PACKAGE Pb Free Product FEATURES * Low profile package * Small size * Low inductance * High temperature soldering : 260°C /10 seconds at terminals 0.196 4.9 0.180(4.5) 0.012(0.3) Typ. * RoHS product for packing code suffix "G"
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ZS4728A
ZS4764A
MIL-STD-202
ZENER DIODE z91
Willas Z68
diode Z47
z39 marking
DIODE z91
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Untitled
Abstract: No abstract text available
Text: TQM8M9079 500−2700 MHz Variable Gain Amplifier Applications • • • • Wireless Infrastructure LTE / WCDMA / CDMA / EDGE PtP IF Gain Control General Purpose Wireless 20-pin 5x5 mm Leadless Package Product Features • • • • • • • • Functional Block Diagram
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TQM8M9079
20-pin
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
MHVIC915NR2
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J40-5
Abstract: FET J134 A113 A114 A115 AN1955 AN1977 AN1987 C101 JESD22
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 9, 5/2006 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
MHVIC915NR2
J40-5
FET J134
A113
A114
A115
AN1955
AN1977
AN1987
C101
JESD22
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
IS-95
MHVIC915R2
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GRM40X7R103J050BD
Abstract: J422 RM73B2AT104J j392 FET J134
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 7, 7/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
IS-95
MHVIC915R2
GRM40X7R103J050BD
J422
RM73B2AT104J
j392
FET J134
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Murata grm40
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
MHVIC915R2
Murata grm40
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915NR2 Rev. 8, 7/2005 RF LDMOS Wideband Integrated Power Amplifier The MHVIC915NR2 wideband integrated circuit is designed with on -chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915NR2
IS-95
MHVIC915NR2
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MW5IC2030NBR1
Abstract: A113 AN1955 AN1987 MW5IC2030GNBR1 600S1R8AT 600s3r9at 1.5 j63 600S2
Text: Freescale Semiconductor Technical Data Document Number: MW5IC2030N Rev. 8, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW5IC2030N wideband integrated circuit is designed with on - chip matching that makes it usable from 1930 to 1990 MHz. This multi - stage
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MW5IC2030N
MW5IC2030N
MW5IC2030NBR1
MW5IC2030GNBR1
A113
AN1955
AN1987
MW5IC2030GNBR1
600S1R8AT
600s3r9at
1.5 j63
600S2
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J703
Abstract: No abstract text available
Text: Document Number: MHVIC915R2 Rev. 8, 8/2006 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to
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MHVIC915R2
J703
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marking J6 transistors
Abstract: J702 GM 950 motorola grm40 KOA RM73B2AT102J DATASHEET marking Z4 Marking Z7 Gate Driver A113 A114 A115
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 8, 8/2006 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 Final Application • Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 80 mA, IDQ2 = 120 mA, Pout = 34 dBm, Full Frequency Band 746 to
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MHVIC915R2
marking J6 transistors
J702
GM 950 motorola
grm40
KOA RM73B2AT102J DATASHEET
marking Z4
Marking Z7 Gate Driver
A113
A114
A115
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z15 Diode glass
Abstract: zener diode z33 diode Z27 Zener diode z12 15 Z15 marking diode diode Z47 MARKING CODE 24Z MARKING Z68 24z diode Z68 MARKING
Text: BZD27C Series 0.8 W Surface Mount Glass Passivated Zener Diode Dimensions in mm. Voltage 11 to 240 V CASE: M1F DO219AA Power 0.8 W R • Silicon planar zener diodes • Low profile surface-mount package • Zener and surge curren specification • Low leakage curren
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BZD27C
DO219AA)
C200P
z15 Diode glass
zener diode z33
diode Z27
Zener diode z12 15
Z15 marking diode
diode Z47
MARKING CODE 24Z
MARKING Z68
24z diode
Z68 MARKING
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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