Untitled
Abstract: No abstract text available
Text: ~,33 >PFLHTS =28.B >;072?> 3HDTURHS [ R`] \a]d][lja[ klj]f_l` [Yf j]Y[` 9444T@B-H3M. Yf\ l`] afkmdYlagf j]kaklYf[] ak 5444 K [ R`j]] egmflaf_ lqh]k Yj] YnYadYZd]> NBA0 k[j]o egmflaf_ Yf\ CHL jYad egmflaf_2 [ Ual` ^af_]j hjgl][lagf \]na[] [ KYfq caf\k g^ hdm_1af eg\md]k Yj] YnYadYZd]
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9444T
GE559E3559E1
3559EN0
GE58EE358EU3584EE3585EE
D6977
GE58EU3584EE
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trimmer 205
Abstract: TR1000 TS3Y
Text: TS3Y Vishay Sfernice Surface Mount Miniature Trimmer 3 mm Single-Turn Cermet Sealed FEATURES • 0.125 W at 70 °C • Small size for optimum packing density • Suitable for both manual and automatic operations DIMENSIONS in millimeters inches TS3 YJ 2.2 ± 0.2
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18-Jul-08
trimmer 205
TR1000
TS3Y
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GL3EG401E0S
Abstract: GH06510F4A gl3hd401e0s GL3HS401E0S GM5GC03210Z GL3JG401E0S HPD-61 GL3HY401E0S GL3UR401E0S GH16P40A8C
Text: LED HIGH-LUMINOSITY LED LAMPS • High-Luminosity AIGaInP LED Series (Ta = 25°C) Radiation color Green Yellow-green Amber Sunset orange Orange Red Series Dominant emission wavelength (nm) Radiation material ZG, JG ZE, JE ZV, JV, YV ZS, JS, YS ZJ, JJ, YJ
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HPD-61>
GL3EG401E0S
GH06510F4A
gl3hd401e0s
GL3HS401E0S
GM5GC03210Z
GL3JG401E0S
HPD-61
GL3HY401E0S
GL3UR401E0S
GH16P40A8C
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Untitled
Abstract: No abstract text available
Text: 10 M E NOTES : MATERIAL :46NYL0N UL94V-0 = UL/ftSi t = PH0S-BR0 = tfe£*P 0 . l T - f ? □ > - H l/ J -li CONTACT GOLD 0.1 MICROMETER MINIMUM =¥ffl#ltsp tgXy* 1. OVT *□;<- Hi/JiLh TAIL TIN 1.Q MICROMETER MINIMUM =-.yj-jLTts i. 0 7'f'?n*- N u yj= NICKEL1UNDER PLATING 1.0 MICROMETER MINIMUM
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46NYL0N
UL94V-0
J05/04/27
SD-52559-050
EN-02JA1021)
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mtld
Abstract: No abstract text available
Text: DRAWING Customer Information Sheet I N o .: SHEET M80-422XXXX 2 OF 2 1 IF IN D OUBT - ASK | c | NOT TO SCALE ORDER CODE: THIRD ANGLE M80-422XXXX JT T OTAL No. OF CONTACTS 04 T O 50 ( E V E N NUMBERS O N L Y ) 5.55 MAX FINIS 01 05 42 - - ÿ yj yF 13 ! yJ
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M80-422XXXX
422XXXX
mtld
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Untitled
Abstract: No abstract text available
Text: 2 I_ Rev APPROVED: _ Description RELEASED AW0# • Date 5/18/10 Appr DATE:_ TITLE: -.622 [15.80]- I III! uu A > II« r .524 [13.30] .537 [13.65] yj ;3.35] " .4 50 .350_ [8.89] - 0.035 .350 [8.89J" [o.9o; O & .100 [2.54]
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MTJ-88TX1-FSG-PG
S00005C
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. XrA V yJ COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - ,- ALL INTERNATIONAL RIGHTS RESERVED. D C ELECTRICAL Nominal Impedance Ohms B 50 Fnequency Range (GHz) DC to 22 335 VSWR 1.05+.005-P(GHz) DC to 18 GHz
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MIL-STD-202;
005-P
13JAN2009
14JAN09
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74c74
Abstract: No abstract text available
Text: -JSntnm [p[M>}[p yj Tr ©ÄTTÄIL ( MEDIUM VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* * (FORMERLY 86) CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or “Chrome Nickel Silver" also available)
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305mm)
74c74
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FRQS20A045
Abstract: UL94V-01
Text: SBD Anode common 20A 45V Tjw150V Fully Molded similar to TO-22QAB FRQS20A045 tttiS Nihon Inter Electronics Corporation Specification '> 3 '7 h y r yj Construction Schottky Barrier Diode Application High Frequency Rectification • k MAXIMUM RATINGS Ta = 25°C Unless otherwise specified
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45VTjw150V
O-22QAB
FRQS20A045
FRQS20Ar
UL94V-01ggpÂ
UL94V-0
UL94V-01
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TRANSISTOR C86
Abstract: No abstract text available
Text: .Ætttron [^ © yj©!! ©ÄTFÄd© Devices. Inc. VERY HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PNP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available
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250mm
l-62mm
203mm)
350pF
350pF
SDT02353,
SDT02354.
TIP528
TRANSISTOR C86
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74HC138
Abstract: SN74HC138 74HC133 kAIDE
Text: 8 w yjáciow y demultiplekser u i lT L BezwzglQdna max. wartosó w normalnych warunkach pracy NapiQcíe zasilania. Vcc . Prqd wejsc¡owy.l»< Vi O lub V, Prqd wyjáci0wy,loK(Vo -0.5 do 7V
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74HC133
74HC138
SN74HC138
kAIDE
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OPB840L
Abstract: QPB830L
Text: Product Bulletin OPB830 OPTEK January 2006 Slotted Optical Switches Types OPB83QL, OPB84QL Series DIMENSIONS CONTROLLED AT HOUSING SURFACE ONLY. 0PBB30L THRU 0PB832L AND 0PB840L THRU 0PB842L LEAD SPACING: -325 8.26 .075 (1.91) yj 0PB835L THRU 0PB873L AND 0PB845L THRU 0PB847L
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OPB830
QPB830L,
OPB840L
QPB830L
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Untitled
Abstract: No abstract text available
Text: “ yj / \ N — Advanced Linear Devices ALD555-1 1 VOLT HIGH SPEED CMOS TIMER PIN CONFIGURATION GENERAL DESCRIPTION The ALD555-1 tim er is a high perform ance 1 volt operation monolithic timing circuit built w ith advanced silicon gate CMOS technology. It offers
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ALD555-1
ALD555-1
500ns;
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U/25/20/TN26/15/850/2U 40 diode
Abstract: 2N7010 sot23 2n7012 s750 siliconix fet data book PWS740
Text: Or, Call Customer Service at 1-800-548-6132 USA fln/yj BURR-BROWN PWS750 oin h - (/ £ Isolated, Unregulated DC/DC CONVERTER COMPONENTS Q. V) FEATURES APPLICATIONS • 100% TESTED FOR HIGH-VOLTAGE BREAKDOWN • COMPACT-SURFACE MOUNT • MULTICHANNEL OPERATION
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PWS750
IS0103
IS0103.
1500VAC
PWS740-2
1-888-548-S132
U/25/20/TN26/15/850/2U 40 diode
2N7010
sot23 2n7012
s750
siliconix fet data book
PWS740
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AP051
Abstract: No abstract text available
Text: yj Supertax inc. Semicustom 8 P-Channel Monolithic High Voltage Array With Logic Ordering Information H V qut R out *OUT ON) •OUTJOFF)* V OUT = 'OUT(OFF)* ® VoUT = (Max) (Max) 100V Max 250V Max Order Number1 Package Options (Max) -160V 700Q -15mA -1,5nA
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-160V
-320V
-15mA
-15mA
AP0516
AP0532
AN0532
-320Vt
10mV/V
AP051
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Untitled
Abstract: No abstract text available
Text: Or, CaII Customer Service ai 1-8U0-548-6132 USA O/i/yj ABRIDGED DATA SHEET For Additional Technical Information, Request PDS-619. DESIGNED FOR AUDIO 16-Bit Monolithic DIGITAL-TO-ANALOG CONVERTERS FEATURES • PARALLEL INPUT FORMAT • 16-BIT RESOLUTION • 15-BIT MONOTONICITY (typ
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PDS-619.
16-Bit
15-BIT
-92dB
PCM55)
PCM54)
28-PIN
24-LEAD
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Untitled
Abstract: No abstract text available
Text: ÊE MAR December 1992 HS-82C55A RH Radiation Hardened CMOS Programmable Peripheral Interface Pinout Features 40 PIN DIP CASE OUTUNE D-5, CONFIGURATION 3 TOP VIEW • Radiation Hardened - Total Dose >10s RAD Si - Transient Upset <108 RAD(Siys PAJ [7 -yj-PA2 (T
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10sRAD
HS-82C55A
82C55A
HS80C86RH
82C55A
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er c128
Abstract: No abstract text available
Text: .Jfolitron [?^ [D yj(§T Ä ¥Ä [L®(! Devices. Inc. MEDIUM VOLTAGE, FAST RECOVERY CHIP NUMBER PIU EPITAXIAL FAST RECOVERY PLANAR POWER DIODE CONTACT METALLIZATION A Anode: > 50,000 Aluminum Cathode: Gold (Polished silicon or "C hrom e Nickel S ilv er" a lso available)
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457mm)
37mra)
C-128
er c128
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Untitled
Abstract: No abstract text available
Text: Or, Call Custom Service at 1-80II-548-6132 USA fln/yj OPA124 «H T ADVANCED INFORMATION SUBJECT TO CHANGE FEATURES APPLICATIONS • LOW NOISE: 6nVVHz (10kHz • PRECISION PHOTODIODE PREAMP • LOW BIAS CURRENT: 1pA max • MEDICAL EQUIPMENT • LOW OFFSET: 250h V max
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1-80II-548-6132
OPA124
10kHz)
120dB
100dB
OPA124
17313LS
0024S30
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Solitron
Abstract: Solitron Transistor
Text: 8368602 SOLITRON .DEVICES INC SOLITRON DEVICES INC _ 95D 02823 D T ~ JJ-/JT "TS DE |fl3bflbOE 0002053 M [D yj tF ©ÄTTÄ[L®( VERY HIGH VOLTAGE, FAST SWITCHING CH IP NUM BER Devices. Inc. N PN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR* CONTACT METALLIZATION
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SDT55456,
SDT55472,
STD55960,
SDT55560
Solitron
Solitron Transistor
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service a1 1-SÛÛ-548-6132 USA ff/i/yj BURR-BROWN Be b Ii b IS0150AP B ADVANCED INFORMATION SUBJECT TO CHANGE Dual, Isolated, Bi-Directional DIGITAL COUPLER FEATURES APPLICATIONS • REPLACES HIGH-PERFORMANCE OPTOCOUPLERS • MULTIPLEXED DATA TRANSMISSION
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IS0150AP
2400Vrms
VDE0884
-50mW
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Untitled
Abstract: No abstract text available
Text: First Edition LCD M odule Technical Specification Dec. 18, 2008 Final Revision Apr. 12, 2012 D M C 20261N YJ-LY-C K E-C N N STANDARD C u s to m er C ustom er's P roduct No KYOCERA Display Corpration A pproved: C hecked : P rep ared : Teruo K u r a g a n e
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20261N
DMC20261
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION ArN ALL RIGHTS RESERVED. V yJ COPYRIGHT BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC DIST DF FO R E V IS IO N S P LTR G DESCRIPTION DATE DWN VF CT 18NOV05 REV PER EC O —0 5 —01 3 5 6 8 APVD
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18NOV05
31MAR2000
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Untitled
Abstract: No abstract text available
Text: A Product S p e cification DEGSON ELECTRONICS CO., LTD. DEGSON Materials Ad"* C £ Housing: PA66+23%GF, UL94V-0 Brass,0.8t,Tin-P lated Steel,M 4 Ni-Piated Terminal: Screw: - im — . m m Capability , Rated: Temp.Range: W ithstand Voltage: yj Insulation Resistance:
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DG58H-B
UL94V-0
AC2000V
DC500V
22-12AWG
DG58H-B
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