T1451
Abstract: 471 1kv 101 2KV CAP 103 2KV 472 1kv CAP f 103 2KV 821 2kv 681 1kv 103 1KV SEC CAP 250V 4700
Text: HC Series Multilayer Ceramic Chip Capacitors High Voltage MERITEK PECIFICATIONS CODE NPO (1B) X7R (2R1) o ∆C ±15% Temperature Characteristics 0 ±30ppm/ C Dissipation Factor (D.F.) 0.15% max. 2.5% max. (+25oC, 1Vrms, 1MHz) (+25oC, 1Vrms, 1 KHz) Insulation
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30ppm/
-55oC
125oC)
100000M
1000M
T1451
471 1kv
101 2KV
CAP 103 2KV
472 1kv
CAP f 103 2KV
821 2kv
681 1kv
103 1KV SEC
CAP 250V 4700
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MSC 501 302
Abstract: MSC 501 302 diode B 103 K 1KV SEC ceramic capacitor ceramic capacitor 1kV 6.8 nF X7R 3KV 3300 pf ceramic capacitor 6,8 nF 1kV p 5 capacitor 103 1KV 1210 ceramic capacitor .22uf 10 250V Meritek 6.8 nF ceramic capacitor MSC 501
Text: MA Series Multilayer Ceramic Chip Capacitors MERITEK FEATURES AND APPLICATIONS Dielectric x COG x NPO x x x X7R/X5R x x x Y5V x Features Ultra-stable Low dissipation factor Tight tolerance available Good frequency performance No aging of capacitance
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ad2410
Abstract: adv7682 ADV7782WBBCZ ADV7782 AD8465 APIX2 AD7908
Text: Automotive Recommended Part List ARPL PRODUCT CATEGORY GENERIC NUMBER AMBIENT TEMP RANGE MATERIAL DESCRIPTION Updated: 10-Jul-2015 PACKAGE MATERIAL NUMBER ITEM Amplifiers and Comparators AD8040 -40C to 125C Quad Low Power R-R I/O Amp. 14-TSSOP_4.4-4.4_MM
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10-Jul-2015
AD8040
14-TSSOP
AD8040WARUZ-REEL7
AD8065
145MHz
V-24V
23-N/A
AD8065WARTZ-R7
AD8132
ad2410
adv7682
ADV7782WBBCZ
ADV7782
AD8465
APIX2
AD7908
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T49470
Abstract: ht presidio Presidio CERAMIC CAP BQ15-4 Presidio Components BR186 Marking J1N S208X7R br126 EIA-469
Text: SMPS STACKED CAPACITORS CATALOG 1001 TABLE OF CONTENTS MIL-PRF-49470 SPECIFICATION .1 DSCC DRAWING 88011 NPO STACKED
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MIL-PRF-49470
MIL-PRF-49467
MIL-PRF-49470
T49470
ht presidio
Presidio CERAMIC CAP
BQ15-4
Presidio Components
BR186
Marking J1N
S208X7R
br126
EIA-469
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XR-082
Abstract: XR-082CP TL083 XR082CP XR-083 XR-082CN Xr083 XR-082 N XR082M OP tl 082
Text: Z * EX4R XR-082/083 Dual Bipolar JFET Operational Amplifier FUNCTIONAL BLOCK DIAGRAMS GENERAL DESCRIPTION The XR-082/XR-083 family of dual bipolar JF E T opera tional amplifiers are designed to offer higher perform ance than conventional bipolar op amps. Each amplifier
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XR-082/083
XR-082/XR-083
XR-082
XR-083
XR-1488
S232C
XR-1489A
XR-1488N
XR-1488P
XR-1489AN
XR-082CP
TL083
XR082CP
XR-082CN
Xr083
XR-082 N
XR082M
OP tl 082
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300N-120
Abstract: 233110
Text: ± i g b t ^ ^ z l - ; 1 MBI300N-120 r N '> y - X j u J 1200V/300A/ 1 • 4^^ : Features 'V + ' s V High •^/± SERj Speed Switching Voltage Drive Low Inductance Module Structure • o : Applications 4 > '< — $ Inverter for Motor Drive — • A C ,D C '9 '“ # 7 * > 7 P AC and DC Servo Drive Amplifier
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MBI300N-120
200V/300A/
300N-120
233110
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Untitled
Abstract: No abstract text available
Text: BASIC ORDER UNIT nichicon • Request on O rder Quantity: Please note the order quantity must be in multiples of the following base quantity. ALUMINUM ELECTROLYTIC CAPACITORS Bulk Size o f product Long lead Taping L ead fo rm e d ¿3 ¿4 ¿5 — — 2.000
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ZPP22
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2SC3733
Abstract: 2SC3733-T La HL33 2SA1460 IMWS1
Text: SEC j m = f T iY C * S ilicon T ran sis to r i 2 '> 7 iV V & is •; n > P N P :e S A 1 4 6 ^ PNP Silicon Epitaxial Transistor High Speed Switching, High Frequency Amplifier
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2SA1460
2SC3733
12/PACKAGE
PWS10
CycleS50
2SC3733-T
La HL33
2SA1460
IMWS1
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jb 5531
Abstract: JV19 mk 5013 2SA1395 2SC3567 T108 TC-5915 T-25-TS x11A
Text: 5 P — S 7 • 5^— K SEC m '> « ;□> yxor7 S ilic o n P o w e r T ra n s is to r f * T i\ r x 2SC3567 lif f l h'/-? < 7- 2 S C 3 5 6 7 i i i f F i l Ë l ï i X -i v & y ÿ " m t l- 7 > x x n - , X ^ y f > 7 - u J f i U - i ' , 0 H Ï2 IH Jp - fï : m m
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2SC3567iifl5iÃ
2SA1395
jb 5531
JV19
mk 5013
2SA1395
2SC3567
T108
TC-5915
T-25-TS
x11A
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TC-7606
Abstract: 2SK1283
Text: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to
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2SK1283
2SK1283
TC-7606
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UPA61A
Abstract: UPA60A PA60A UPA61 T108
Text: NEC j m + T t v r x Y = 7 7 . 9 C o m p o u n d F ie ld -E ffe c t T ra n s is to r A / / P A 6 A , 6 1 A i i f t i m m N-Channel Silicon Dual Junction FET Differential Am plifier Industrial Use HP A 60 A , 9YMM /PACKAGE DIMENSIONS Unit: mm 6 1 A ii,N f- -v ^ ;U x > ;
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oc60
Abstract: ICX206AKB X492 KA2 V3
Text: SONY IGX206AKB í í £ 4 .5 mm 1/ 4 SÜ N TSC* ~y — ICX 206A K B (i, M L tz y' - ë - r t jj ¿ 7K 4 y 9 *74 > Í 5C C D # :ífít^ - 7-’tr'to Super ÍÍÉ^pqICX086A K B H ^ HAD CCDfètÎiO^fffl U S J t, L fz o )V ? £ L T Y e , Cy, Mg, G 7 + - ;v
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ICX206AKB
ICX206AKBÃ
WtpqICX086AKB
ICX086AKBit)
-20--100mm
oc60
ICX206AKB
X492
KA2 V3
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Untitled
Abstract: No abstract text available
Text: 155 Mbps ATM SAR CONTROLLER WITH ABR SUPPORT FOR PCI-BASED NETWORKING APPLICATIONS PRELIMINARY INFORMATION IDT77252 Integrated Device Technology, Inc. KEY FEATURES • Full-duplex Segmentation and Reassembly SAR at 155 Mbps "wire-speed" (310 Mbps aggregate speed).
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IDT77252
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ABB 07 kr 240
Abstract: IC-8176 12h24 fbii nitto GE D6453 T108 ptc PD6453 PD6453GT-101
Text: M O S*tt0 SS MOS Integrated Circuit u P D645 3 CMOS LSI ’V'f ?n=r > £ * - ? izffiAfr b l t X TV, t ' T * * T -i X 9 & £ // P D 6 4 5 3 i , _hC H ^iJ, -f-v V 7 > /f ffl C M 0 S L S I T ' T o fz, • -? -> '< & • h ' 6 0 X :? : £ ^ 7 * t ~ & ^ ' > • x ; iJ - > ' ^ - V 7 ^ i ' * f V X
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6453GT-101
27-544i
ABB 07 kr 240
IC-8176
12h24
fbii
nitto GE
D6453
T108 ptc
PD6453
PD6453GT-101
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Untitled
Abstract: No abstract text available
Text: MACH 5 CPLD Family BEYOND PERFORMANCE Fifth G eneration MACH A r c h it e l i. . ^ FEATURES — 128 to 512 m acrocell densities — 68 to 256 l/Os ♦ Wide selection of density and I/O combinations to support most application needs — 6 m acrocell density o ptions
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M5A3-256/68
LV-512/256-7AC-10AI.
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E355D
Abstract: mikroelektronik RFT A283D B3370 D100D information applikation B083D SN28654N SN28654 A277D
Text: ïTTfe Information Applikation Ü b e rsic h t VEB HALBLEITERWERK FRANKFURT ODER âl-< I n r D D G ^ Ö E i s W s n o r i i H IN F O R M A T IO N - A P P L IK A T IO N Bipolare integrierte Schaltkreise des VEB Halbleiterwerk Frankfurt /O d e r H e ft 20
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Halbleiterbauelemente DDR
Abstract: information applikation MAA725 information applikation mikroelektronik VEB mikroelektronik Mikroelektronik Information Applikation mikroelektronik applikation "Mikroelektronik" Heft mikroelektronik DDR applikation heft
Text: LnnJütkilr'l; E l d - t = n a | - | i l - C Information Applikation D/A WandlerFamilie wvReferenz Stromquellen schalter /« Widerstands netzwerk 1 J • -CCI w f f i ni ö l k ä r i' t s i s l s S - t f c s n o r i i l - t i iforma t l o n pplikation
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k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d
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Untitled
Abstract: No abstract text available
Text: f PRELIMINARY CYPRESS C Y 7 C 92 4D X 200 MBaud HOTLink Transceiver Features Second generation HOTLink™ technology Fibre Channel and ESC O N com pliant 8B /10B encoder/decoder 10- or 12-bit pre-encoded data path raw m ode 8- o r 10-bit encoded data transport (using 8B/10B
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12-bit
10-bit
8B/10B
200-M
D30Bflb
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LA 7821
Abstract: LM 7821 str wg 753 pj 0266 lu 7821 YCR02 p46ad F7821 NEC 7924 PD78213
Text: J. 8 I I ih Y N E C ^ M os M O S In te g ra te d C ir c u it //PD78212 A ,78213 (A),78214 (A) t f -y h • is > V iV j- 7 7°* v > r ^ P = i V b 0 zL — ^ ¿iPD78212(A), 78213(A), 78214(A) tt, 78K/II -> U- X ' W i S T t . 78K/II v 'J - X l i , ^ Î Æ â R H J : U 1M
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uPD78212
uPD78213
uPD78214
78K/II
78K/II
PD78212,
12MHz
333ns(
PD78212
LA 7821
LM 7821
str wg 753
pj 0266
lu 7821
YCR02
p46ad
F7821
NEC 7924
PD78213
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vlt 2900
Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
Text: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „
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uPD78P334
78P334
78334C
PD78334
32768X8
J2T43Bt\
24-i-
vlt 2900
UPD78P334LQ
78p334
78P334LQ
IC-8075
s13s3
T02I
TFK 082
MPD78P334
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120m tdk
Abstract: 78P312 D78P312A pd78312 PA-78P312GF IEM-5086 uPD78P312 uPD78P312A uPD78P312AGQ-36 uPD78P312AL
Text: — S • S '— h mmmfà NEC m os M O S Integrated Circuit P D 7 8 P312A m ^ f n r l S c f A I 6 / 8 £ ' y V • ' > > & J U ? - 7 7 ° - - ^ > T ^ □ =1 > fc° z l — ^ ,«PD78P312A ü , ,uPD78312A<7 |*]/I-^X 7 ROM £ >7 > • M A PROM £ fciiE P R O M f c ë
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P312A
uPD78P312A
uPD78312A
PD78312A
IEM-5086
PD78312Ari
120m tdk
78P312
D78P312A
pd78312
PA-78P312GF
IEM-5086
uPD78P312
uPD78P312AGQ-36
uPD78P312AL
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vw polo
Abstract: 7A SF CQ MEF PD7821 an7q mc 13516 UPD78214 PD78218A 5532 ic sub P65a
Text: 1 — • s S '— h m jü fltm æ o s M O S In te g ra te d C irc u it ¿¿PD7 8 2 1 7 A , 7 8 2 1 8 A § //PD 78217A , 78218A i, i* S , m îÆ OTîÆ^IOTÎï * '! ! , ? I T - T 0 / ï 'J ^ m C P U £ Î l i c L tz 7 8 K /I v U - X ( 7 » nnn T", ¿¡PD78213, 78214O T > ï >J
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8217A
8218A
uPD78213
uPD78214
8218A
IEU-755
IEU-754
vw polo
7A SF
CQ MEF
PD7821
an7q
mc 13516
PD78218A
5532 ic sub
P65a
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NTP 7100
Abstract: UM 7107 17p107 7107 dmm HTR 512-1 IR LFN C712 PC-9800V IC-8311A
Text: M O S J M J I0 S& M O S Integ rated C ircu it P D 1 7 1 0 7 L ,1 7 1 0 7 L ÎA 4 fcf'y h • 7 7 °#T-f //PD17107L, 17107LCA) It, ROM I K ' U b 512 X hP - 7 16 fcf'y h), RAM 16 x 4 b'>y h, I/O tH— h 11 □ — ^ T-To U J M C /i I ' 1 « t z m t m 'M 2 ^ * W :<M£TZ>m£h^<n
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uPD17107L
uPD17107LCA
NTP 7100
UM 7107
17p107
7107 dmm
HTR 512-1
IR LFN
C712
PC-9800V
IC-8311A
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