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    Rochester Electronics LLC MAX1894XEEE

    IC BATT PACK PROTECTOR LI+
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    DigiKey MAX1894XEEE Bulk 70
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    Maxim Integrated Products MAX1924XEEE-

    IC BATT PROT LI-ION 3-4CL 16QSOP
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    DigiKey MAX1924XEEE- Tube 1
    • 1 $6.03
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    Antex (Electronics) Limited XEEE070

    Soldering Iron Tip, For Xeee010 Rohs Compliant: Na |Antex XEEE070
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    Newark XEEE070 Pack 1
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    Antex (Electronics) Limited XEEE040

    Soldering Iron Tip, Fine Point Rohs Compliant: Na |Antex XEEE040 (Alternate Part Number: 5015044203060
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    Newark XEEE040 Bulk 1
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    Bimba Manufacturing Company 172-DXEEE1

    Cylinder, O.L.,S.R.; 1-1/2In Bore; Stroke: 2In; Dbl Act/Univ Mt, Non-Lube ; 1 I | Bimba 172-DXEEE1
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    RS 172-DXEEE1 Bulk 5 Weeks 1
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    XEEE Datasheets Context Search

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    intel 945 motherboard schematic diagram

    Abstract: Roland e 38 schematic RX-2-G 945 MOTHERBOARD CIRCUIT diagram SPC3 CS4239 CS4239-JQ CS4239-KQ CS4610 CS9236
    Text: CS4239 Advanced Product Databook FEATURES CrystalClear Portable ISA Audio System • Compatible with Sound Blaster™, Sound Blaster Pro™, and Windows Sound System™ ■ Integrated CrystalClear™ 3D Stereo Enhancement DESCRIPTION ■ Enhanced Stereo Full Duplex Operation


    Original
    PDF CS4239 CS4610 CS9236 CS4236B/CS4237B/CS4238B CS4239 CS9236 IEC-958 CS4237B CS4238B, CS4239. intel 945 motherboard schematic diagram Roland e 38 schematic RX-2-G 945 MOTHERBOARD CIRCUIT diagram SPC3 CS4239-JQ CS4239-KQ

    c16sj

    Abstract: 74286 L5331
    Text: CO»'"'I«HT 19 5 6 8 DRAWING MADE IN THIRD ANGLE PROJECTION THIa DRAWING 13 UNPUBLISHED. | RELEASED FOR PUOLICATION •Y AMP IrfPO M K.-leu. 4 O 1 3 1 ,19 AU INTANATICHAL RIGHTS RESERVED. Î 2 MOO LOC OIBT 4882 DF DO xeee 1 REVISIONS 1 DATE 1 APPO I M9CIIIPT10N


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    PDF 9CIIIPT10N QQ-A-591 c16sj 74286 L5331

    UM82450

    Abstract: No abstract text available
    Text: UMC UM82450 Asynchronous Communication — Element ACE Mi Feature • Adds or deletes standard asynchronous communication bits (start, stop, and parity) to or from serial data stream ■ Full double buffering eliminates need for precise synchronization ■ Independently controlled transmit, receive, I ine status,


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    PDF UM82450 UM82450

    A12L

    Abstract: A13L CY7C09159V CY7C09169V
    Text: fax id: 5208 CYPRESS CY7C09159V CY7C09169V PRELIMINARY 3.3V 8K/16K x 9 Synchronous Dual Port Static RAM • H ig h-speed clo ck to d ata ac ce ss 7.5/12 ns m ax. Features • 3.3V Low o p e ratin g p ow er • True D u al-P o rted m e m o ry cells w h ich allo w sim u lta­


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    PDF CY7C09159V CY7C09169V 8K/16K CY7C09159V) CY7C09169V) 67-MHz 35-micron A12L A13L CY7C09159V CY7C09169V

    intel 945 motherboard schematic diagram

    Abstract: PC intel 945 MOTHERBOARD eprom chip used in CIRCUIT MGE 3200 rt midi in midi out connections intel 915 motherboard schematic creative sound blaster 5.1 circuit diagram SPC3 CS4239 CS4239-JQ CS4239-KQ
    Text: CS4239 c irri K — Advanced Product Databook LOGIC FEATURES • Compatible with Sound Blaster , Sound Blaster Pro™, and Windows Sound System™ ■ Integrated CrystalClear™ 3D Stereo Enhancement DESCRIPTION ■ Enhanced Stereo Full Duplex Operation


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    PDF CS4239 CS4610 CS9236 CS4236B/CS4237B/CS4238B CS4239 IEC-958 CS4237B CS4238B, CS4239. intel 945 motherboard schematic diagram PC intel 945 MOTHERBOARD eprom chip used in CIRCUIT MGE 3200 rt midi in midi out connections intel 915 motherboard schematic creative sound blaster 5.1 circuit diagram SPC3 CS4239-JQ CS4239-KQ

    LXXXXXXXX

    Abstract: TNC 24 mk 2 026R CY7C09569V tb136 A14L CY7C09579V
    Text: «oaHaoooiMMMWfMMMMMM!9:^ v’*'» -• -■ -■ -^ jjÉBT *¿f5’00“’ '*'^ 7“T ■ ■ ■ ■ <1; .r {• o CY7C09569V CY7C09579V PRELIMINARY f:,ò b 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM • 3.3V Low o p e ratin g p ow er


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    PDF CY7C09569V CY7C09579V 16K/32K FLEx36â CY7C09569V) CY7C09579V) 25-micron 100-MHz LXXXXXXXX TNC 24 mk 2 026R CY7C09569V tb136 A14L CY7C09579V

    A15LC

    Abstract: A14L A14LC A12LC CY7C09099V 751V
    Text: “ tv * I PRELIMINARY CY7C09079V/89V/99V CY7C09179V/89V/99V 3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow sim ulta­ neous access of the same memory location • 6 Flow-Through/Pipelined devices


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    PDF CY7C09079V/89V/99V CY7C09179V/89V/99V 32K/64K/128K CY7C09079V/179V) CY7C09089V/189V) CY7C09099V/199V) 83-MHz 35-micron 1V9/12 A15LC A14L A14LC A12LC CY7C09099V 751V

    PFR 15T

    Abstract: c3ke hcn 73 IDT709269 IDT709279 014L
    Text: : mMMMMWMJ!. CY7C09269/79/89 CY7C09369/79/89 PRELIMINARY CYPRESS 16K/32K/64K x16/18 Synchronous Dual Port Static RAM • Low operating power Features — Active= 195 mA typical • True Dual-Ported mem ory cells which allow sim ulta­ neous access of the same memory location


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    PDF CY7C09269/79/89 CY7C09369/79/89 16K/32K/64K x16/18 CY7C09269/369) CY7C09279/379) CY7C09289/389) 100-MHz 35-micron PFR 15T c3ke hcn 73 IDT709269 IDT709279 014L

    Untitled

    Abstract: No abstract text available
    Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e


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    PDF 32-Pin Am28F010A

    Untitled

    Abstract: No abstract text available
    Text: CYPRESS C Y7C 09159V PRELIMINARY_ C Y 7 C 0 9 1 6 9 V 3.3V 8K/16K x 9 Synchronous Dual Port Static RAM H ig h -s p e ed clo ck to d ata ac c e s s 7.5 l1V9/12 ns m a x. Features 3.3 V Low o p e ratin g p ow er • True D u al-P o rted m e m o ry cells w h ich allo w s im u lta ­


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    PDF 9159V 8K/16K l1V9/12 9169V 100-Pin

    CY7C09099V

    Abstract: No abstract text available
    Text: fax id: 5210 PRELIMINARY CY7C09079V/89V/99V CY7C09179V/89V/99V 3.3V 32K/64K/128K x 8/9 Synch ronous Dual-Port Static RAM Features • True Dual-Ported mem ory cells which allow sim ulta­ neous access of the same memory location • 6 Flow-Through/Pipelined devices


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    PDF CY7C09079V/89V/99V CY7C09179V/89V/99V 32K/64K/128K 35-micron CY7C09079V/179V) CY7C09089V/189V) CY7C09099V/199V) CY7C09099V

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON llllM J ilL liM W Iie i M28C17 16K 2K x 8 PARALLEL EEPROM with SOFTW ARE DATA PRO TECTIO N • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5V ± 10% SUPPLYVOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation


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    PDF M28C17 M28C17 PLCC32

    IC MARKING A60

    Abstract: IC 741 cn
    Text: fa427S25 0D452bl *NECE MOS INTEGRATED CIRCUIT /¿ P D 4 2 S 1 6 9 0 0 L ,4 2 S 1 7 9 0 0 L 16 M BIT D Y N A M IC RAM 3 .3 V FAST PAGE M O DE P R E L IM IN A R Y DESCRIPTIO N The NEC # PD42S16900L and n PD42S17900L are 2 097 152 words by 9 b its dynamic CMOS RAM


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    PDF fa427S25 0D452bl uPD42S16900L uPD42S17900L //PD42S16900L) b427525 004EbBL> 475mil) P32VF-100-475A P32VF-100-475A IC MARKING A60 IC 741 cn

    CY7C09349-6AC

    Abstract: LT 5219 SAD XT
    Text: fax id: 5219 7^ CYPRESS CY7C09349 CY7C09359 PRELIMINARY 4K/8K x 18 Synchronous Dual-Port Static RAM • High-speed clock to data access 6.5/7.5/12 ns max. • Low operating power Features • True Dual-Ported mem ory cells which allow sim ulta­ neous access of the same mem ory location


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    PDF CY7C09349 CY7C09359 100-pin CY7C09349-6AC LT 5219 SAD XT

    100-PIN

    Abstract: G38-87
    Text: O rder this docum ent by M CM 63Z936/D SEMICONDUCTOR TECHNICAL DATA Product Preview 512K x 36 and 1M x 18 Bit ZBT Fast Static RAM MCM63Z936 MCM63ZA18 The ZBT RAM is a 16M—bit synchronous fast static RAM designed to provide Zero Bus Turnaround . The ZBT RAM allows 100% use of bus cycles during


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    PDF MCM63Z936/D MCM63Z936 MCM63ZA18 -TOUCHTONE1-602-244-6609 MCM63Z936/D 100-PIN G38-87

    100-PIN

    Abstract: G38-87
    Text: O rder this docum ent by M CM 63Z836/D SEMICONDUCTOR TECHNICAL DATA Product Preview 256K x 36 and 512K x 18 Bit ZBT Fast Static RAM MCM63Z836 MCM63Z918 The ZBT RAM is an 8 M -b it synchronous fast static RAM designed to provide Zero Bus Turnaround . The ZBT RAM allows 100% use of bus cycles during


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    PDF MCM63Z836/D MCM63Z836 MCM63Z918 MCM63Z836 100-PIN G38-87

    RJ11C

    Abstract: RJ-11C xr2402 Xeco
    Text: SCXECOM XE0002 DAA DATA ACCESS ARRANGEMENT VDD VCC Rl RCVR XM rr XMFR T1 OH GND T2 FEATURES o Small Size - 1 ,25”x1,0"x0.5" o User Transferable FCC Part 68 Registration o Ring Detection v o 2 to 4 Wire Converter o 1500 Volt Isolation o 800 Volt Surge Protection


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    PDF XE0002 RJ11C RJ-11C xr2402 Xeco

    A0L-A12L

    Abstract: A12L CY7C09349A CY7C09349A-12AC CY7C09349A-6AC CY7C09349A-7AC CY7C09349A-9AC CY7C09359A CY7C09359A-6AC IND5
    Text: - - = CYPHhbo CY7C09349A PRELI MI NARY_ CY7C09359A = 4K/8K x 18 Synchronous Dual-Port Static RAM High-speed clock to data access 6.5l1V7.5/9/12 ns max. Low operating power Features • True dual-ported m em ory cells which allow sim ulta­ neous access of the same m em ory location


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    PDF CY7C09349A CY7C09359A CY7C09349A) CY7C09359A) 100-MHz 35-micron A0L-A12L A12L CY7C09349A CY7C09349A-12AC CY7C09349A-6AC CY7C09349A-7AC CY7C09349A-9AC CY7C09359A CY7C09359A-6AC IND5

    SN75LVDS81

    Abstract: No abstract text available
    Text: + June 1998 National Semiconductor 3 O C/3 <£> o I O O tn W 00 CO D S 90C 383A /D S 90C F 383A + 3.3V P r o g r a m m a b le LVD S T ra n s m itte r 24-Bit Flat Panel D isplay FPD) Link-65 M H z > Ö lo o +3.3V LVDS T ra n s m itte r 24-Bit Flat Panel D isplay (FPD )


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    PDF 24-Bit Link-65 83A/D F383A l998/06/10 SN75LVDS81

    F100K

    Abstract: NM100504 NM5104
    Text: National Ztii Semiconductor NM100504/NM5104 256k BiCMOS SRAM 64k x 4 General Description The NM5104 and NM100504 are 262,144-bit fully static, asynchronous, random access memories organized as 65,536 words by 4 bits. The devices are based on National’s advanced one micron BiCMOS III process. This process uti­


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    PDF NM100504/NM5104 NM5104 NM100504 144-bit TL/D/10390-13 28-Pin NM5104D12/15 F100K

    UPD482445GW-70

    Abstract: UPD482445
    Text: DATA SHEET MOS INTEGRATED CIRCUIT UPD482444, 482445 4M-Bit Dual Port Graphics Buffer 256K-WORD BY 16-BIT D es crip tio n The ,uPD482444 and ,uPD482445 have a random access port and a serial access port. The random access port has a 4M-bit 262, 144 words x 16 bits memory cell array structure. The serial access port can perform clock


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    PDF uPD482444 uPD482445 256K-WORD 16-BIT UPD482445GW-70

    nec 424800

    Abstract: ic 2716 ic2716 PD42S4800-70 424800-10 424800-80 TXXXXXXXXXX
    Text: DATA SHEET NEC / MOS INTEGRATED CIRCUIT jU P D 4 2 S 4 8 0 0 , 4 2 4 8 0 0 4 M -BIT D Y N A M IC R A M 512 K -W O R D B Y 8-BIT, F A S T P A G E M O D E D e s c rip tio n The /¿PD42S4800, 424800 are 524,288 words by 8 bits CMOS dynamic RAMs. The fast page mode capability


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    PDF uPD42S4800 uPD424800 PD42S4800 28-pin /iPD42S4800-60, PD42S4800-70, PD42S4800-80, PD42S4800-10, VP15-207-2 nec 424800 ic 2716 ic2716 PD42S4800-70 424800-10 424800-80 TXXXXXXXXXX

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC M E M O R Y / A S I C SÖE J> b3L7251 00074^ T35 IM0T3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 9 Bit Dynamic Random Access Memory Module MCM94000 MCM9L4000 MCM94030 The M C M 94000 is a 36M dynam ic random access m em ory (DRAM ) m odule


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    PDF b3L7251 30-lead 4100A 9L4000 MCM94030L60 MCM94030L70 MCM94030L80 MCM9L4030L60 MCM9L4030L70

    nsk XTAL osc

    Abstract: intel 8035 8048 fujitsu 42 nsk Crystal osc NSK oscillator oscillator nsk NSK crystal NSK osc MBL8035 f0951
    Text: FUJITSU A d va n c ed Products O cto b er 1986 Edition 1.0 • M B L 8 0 4 8 N /E /H M B L 8 0 3 5 N /E /H NMOS Single-Chip 8-Bit Microcomputer D e sc rip tio n Th e Fujitsu M BL8048/M BL8035 is a totally self-contained 8-bit parallel one-chip m icrocom puter fabricated wtih an N-channel


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    PDF MBL8048N/E/H MBL8035N/E/H MBL8048/MBL8035 MBL8048 MBL8035 DIP-40P-M01) D40006S-1C 29JMAX nsk XTAL osc intel 8035 8048 fujitsu 42 nsk Crystal osc NSK oscillator oscillator nsk NSK crystal NSK osc f0951